? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 gaas dpdt switch dc - 6.0 ghz rev. v3 MASW6030G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? low insertion loss, 0.5 db typical ? fast switching speed, 4 ns typical ? ultra low dc power consumption ? rohs* compliant description ma/com?s MASW6030G is a gaas mmic dpdt switch die. the MASW6030G is ideally used where low power consumption is required. typical applications include transmit / receive switching, switch matrices and switched filter banks, wlan ieee 802.11a and 802. 11 b/g systems. other applications include cordless phones and base stations. ordering information part number package MASW6030G die 1 bond pad dimensions pad layout control value (a or b) 0/-8 v max input rf power +34 dbm (0.5 - 6.0 ghz with 0/-8 v ctl) storage temperature -65c to +175c max operating temperature +175c parameter absolute maximum absolute maximum rating 2,3 2. exceeding any one or combination of these limits may cause permanent damage to this device. 3. m/a-com does not recommend sustained operation near these survivability limits. bond pad dimensions - inches (mm) rf1, rf6 0.005 x 0.005 (0.130 x 0.150) rf2, rf3, rf4, rf5, a, b 0.004 x 0.004 (0.100 x 0.100) gnd 0.005 x 0.013 (0.130 x 0.320) rf1 to rf6 to a b rf2 rf3 rf4 rf5 1 0 on off on off 0 1 off on off on truth table 4,5 4. 0 = 0 to ?0.2 v, 1 = -5 v. 5. when an rf output port is ?off? it is shorted to ground through an ?on? shunt mesfet. die size - inches (mm) 0.048 x 0.038 x 0.010 (1.220 x 0.970 x 0.250) schematic *restrictions on hazardous substances, european union directive 2002/95/ec. 1. die quantity varies.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 gaas dpdt switch dc - 6.0 ghz rev. v3 MASW6030G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications : +25c, 0/5 vdc, 50 parameter test conditions units min. typ. max. insertion loss 6 dc - 1.0 ghz dc - 2.0 ghz dc - 4.0 ghz dc - 6.0 ghz db db db db ? ? ? ? ? ? ? ? 0.6 0.8 1.0 1.5 isolation dc - 1.0 ghz dc - 2.0 ghz dc - 4.0 ghz dc - 6.0 ghz db db db db 40 35 25 20 ? ? ? ? ? ? ? ? vswr dc - 1.0 ghz dc - 2.0 ghz dc - 4.0 ghz dc - 6.0 ghz ratio ratio ratio ratio ? ? ? ? ? ? ? ? 1.2:1 1.4:1 1.5:1 1.8:1 input p-1db 0.5 - 6.0 ghz, 0 / -5v, 0 / -8v 0.05 ghz, 0 / -5v, 0 / -8v dbm dbm ? ? +27 / +33 +21 / +26 ? ? ip2 two tone input power up to +5 dbm 0.5 - 6.0 ghz 0.05 ghz dbm dbm ? ? +68 +62 ? ? ip3 two tone input power up to +5 dbm 0.5 - 6.0 ghz 0.05 ghz dbm dbm ? ? +45 +40 ? ? control current v in low (0 to ?0.2 v) v out high (-5 v @ 10 a typ to ?8 v) a a ? ? ? ? 5 100 t-rise, t-fall 10% to 90% rf and 90% to 10% rf ns ? 2 ? t on , t off 50% control to 90% rf, and 50% control to 10% rf ns ? 4 ? transients in band mv ? 15 ? handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. 6. loss changes 0.0025 db/c (-55c to +85c.)
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 gaas dpdt switch dc - 6.0 ghz rev. v3 MASW6030G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 20 30 40 50 60 70 80 01234567 frequency (ghz) isolation @ 25c 1.0 1.2 1.4 1.6 1.8 2.0 01234567 frequency (ghz) vswr @ 25c handling precautions permanent damage to the MASW6030G may occur if the following precautions are not adhered to: a. cleaniness - MASW6030G should be handled in a clean environment. do not attempt to clean unit after the MASW6030G is installed. b. static sensitivity?all chip handling equipment and personnel should be dc grounded. c. transient - avoid instrument and power supply transients while bias is applied to the MASW6030G. use shielded signal and bias cables to minimize inductive pick-up. d. bias - apply voltage to either of the complementary control ports only when the other is grounded. no port should be allowed to ?float?. e. general handling - it is recommended that the MASW6030G chip be handled along the long side of the die with a sharp pair of bent tweezers. do not touch the surface of the chip with fingers or tweezers. typical performance 0.0 0.5 1.0 1.5 2.0 01234567 insertion loss +30c insertion loss -55c insertion loss +85c frequency (ghz) insertion loss wire bonding a. ball or wedge with 1.0 mil diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150c and a ball bonding force of 40 to 50 grams or wedge bonding force o1 18 to 22 grams is recommended. ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. b. wirebonds should be started on the chip and terminated on the package.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 gaas dpdt switch dc - 6.0 ghz rev. v3 MASW6030G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. mounting the MASW6030G is back-metallized with pd/ni/au (100/1,000, 10,000 ?) metallization. it can be die- mounted with ausn eutectic preforms or with thermally conductive epoxy. the package surface should be clean and flat before attachment. eutectic die attach: a. a 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255c and a tool temperature of 265c. when not 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290c. b. do not expose the MASW6030G to a temperature greater than 320c for more than 20 seconds. no more than 3 seconds for scrubbing should be required for attachment. epoxy die attach: a. apply a minimum amount of epoxy and place the MASW6030G into position. a thin epoxy fillet should be visible around the perimeter of the chip. b. cure epoxy per manufacturer?s recommended schedule. c. electrically conductive epoxy may be used by is not required.
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