CZD2983 npn epitaxial planar silicon transistor elektronische bauelemente 03-sep-2010 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? description the CZD2983 is designed for power amplifier and driver stage amplifier applications. features ? high transition frequency f t = 100mhz (typ.) ? complements to czd1225 marking absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 160 v collector to emitter voltage v ceo 160 v emitter to base voltage v ebo 5 v collector current i c 1.5 a base current i b 0.3 a total device dissipation (t a =25c) p d 1 w total device dissipation (t c =25c) p d 15 w junction temperature t j 150 storage temperature t stg -55 ~ 150 ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g5.40 6.2 h0.8 1.20 a c d n o p g e f h k j m b d-pack (to-252) date code 2983 ???? ? 1 2 3
CZD2983 npn epitaxial planar silicon transistor elektronische bauelemente 03-sep-2010 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage bv cbo 160 - - v i c = 1ma, i e =0 collector-emitter breakdown voltage bv ceo 160 - - v i c = 10ma, i b =0 emitter-base breakdown voltage bv ebo 5 - - v i e = 1ma, i c =0 collector cut-off current i cbo - - 1 a v cb = 160v, i e =0 emitter cut-off current i ebo - - 1 a v eb = 5v, i c =0 collector-emitter satu ration voltage v ce(sat) * - - 1.5 v i c = 500ma, i b = 50ma base-emitter saturation voltage v be(on) * - - 1.0 v v ce = 5v, i c = 500ma *dc current gain h fe * 70 - 240 v ce = 5v, i c = 100ma transition frequency f t - 100 - mhz v ce = 10v, i c = 100ma output capacitance c ob - 25 - pf v cb =10v, i e =0, f=1mhz *measured under pulse condition. pulse width Q 300 s, duty cycle Q 2% classification of hfe rank o y range 70 ~ 140 120 ~ 240
CZD2983 npn epitaxial planar silicon transistor elektronische bauelemente 03-sep-2010 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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