5stp 20t1600 ts - t/176/05 jul-10 1 of 5 5stp 20t1600 old part no. t 918c-2010-16 phase control thyristor properties key parameters high operational capability v drm , v rrm = 1 600 v possibility of serial and parallel connection i tavm = 1 956 a applications i tsm = 27 300 a controlled rectifiers v to = 0.948 v ac drives r t = 0.152 m w types v rrm , v drm 5stp 20t1600 5stp 20t1400 1 600 v 1 400 v conditions: t j = -40 125 c, half sine waveform, f = 50 hz mechanical data f m mounting force 22 2 kn m weight 0.40 kg d s surface creepage distance 18 mm d a air strike distance 9 mm fig. 1 case abb s.r.o. novodvorska 1768/138a, 142 21 praha 4, czech republic tel.: +420 261 306 250, http://www.abb.com/semiconductors
5stp 20t1600 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - t/176/05 jul-10 2 of 5 maximum ratings maximum limits unit v rrm v drm repetitive peak reverse and off-state voltage t j = -40 ? 125 c 5stp 20t1600 5stp 20t1400 1 600 1 400 v i trms rms on-state current t c = 70 c, half sine waveform, f = 50 hz 3 073 a i tavm average on-state current t c = 70 c, half sine waveform, f = 50 hz 1 956 a i tsm peak non-repetitive surge half sine pulse, v r = 0 v t p = 10 ms t p = 8.3 ms 27 300 29 200 a i 2 t limiting load integral half sine pulse, v r = 0 v t p = 10 ms t p = 8.3 ms 3 730 000 3 540 000 a 2 s (di t /dt) cr critical rate of rise of on-state current i t = i tavm , half sine waveform, f = 50 hz, v d = 2/3 v drm , t r = 0.3 s, i gt = 2 a 200 a/s (dv d /dt) cr critical rate of rise of off-state voltage v d = 2/3 v drm 1 000 v/s p gavm maximum average gate power losses 3 w i fgm peak gate current 10 a v fgm peak gate voltage 12 v v rgm reverse peak gate voltage 10 v t jmin - t jmax operating temperature range -40 125 c t stgmin - t stgmax storage temperature range -40 125 c unless otherwise specified t j = 125 c
5stp 20t1600 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - t/176/05 jul-10 3 of 5 characteristics value unit min. typ. max. v tm maximum peak on-state voltage i tm = 2 000 a 1.250 v v t0 threshold voltage 0.948 v r t slope resistance i t1 = 2 380 a, i t2 = 7 139 a 0.152 m w i dm peak off-state current v d = v drm 80 ma i rm peak reverse current v r = v rrm 80 ma t gd delay time t j = 25 c, v d = 0.4 v drm , i tm = i tavm , t r = 0.3 s, i gt = 2 a 2 s t q turn-off time i t = 2 000 a, di t /dt = 12.5 a/s, v d = 2/3 v drm , dv d /dt = 50 v/s 150 s q rr recovery charge the same conditions as at t q 2 200 c i h holding current t j = 25 c t j = 125 c 170 90 ma i l latching current t j = 25 c t j = 125 c 450 350 ma v gt gate trigger voltage v d = 12v, i t = 4 a t j = - 40 c t j = 25 c t j = 125 c 0.25 4 3 2 v i gt gate trigger current v d = 12v, i t = 4 a t j = - 40 c t j = 25 c t j = 125 c 10 500 250 150 ma unless otherwise specified t j = 125 c thermal parameters value unit r thjc thermal resistance junction to case double side cooling 15.5 k/kw anode side cooling 25.0 cathode side cooling 45.0 r thch thermal resistance case to heatsink double side cooling 4.0 k/kw single side cooling 8.0
5stp 20t1600 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - t/176/05 jul-10 4 of 5 transient thermal impedance i 1 2 3 4 t i ( s ) 0.41773 0.07323 0.00752 0.00214 r i ( k/kw ) 9.311 4.504 1.014 0.675 0 2 4 6 8 10 12 14 16 18 0,001 0,01 0,1 1 10 square wave pulse duration t d ( s ) t r a n s i e n t t h e r m a l i m p e d a n c e j u n c t i o n t o c a s e z t h j c ( k / k w ) analytical function for transient thermal impedance ? = t - - = 4 1 )) / exp( 1 ( i i i thjc t r z conditions: f m = 22 2 kn, double side cooled correction for periodic waveforms 180 sine: add 1.3 k/kw 180 rectangular: add 1.8 k/kw 120 rectangular: add 3.0 k/kw 60 rectangular: add 5.1 k/kw fig. 2 dependence transient thermal impedance junction to case on square pulse 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 0 0,5 1 1,5 2 2,5 3 v t ( v ) i t ( a ) 25c 125c 15 20 25 30 35 40 45 1 10 100 t ( ms ) i t s m ( k a ) 2,5 3 3,5 4 4,5 5 5,5 i 2 d t ( 1 0 6 a 2 s ) i tsm i 2 dt fig. 3 maximum on-state characteristics fig. 4 surge on-state current vs. pulse length, half sine wave, single pulse, v r = 0 v, t j = t jmax
5stp 20t1600 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - t/176/05 jul-10 5 of 5 0 500 1000 1500 2000 2500 3000 3500 0 400 800 1200 1600 2000 2400 i tav ( a ) p t ( w ) y = 30 60 90 120 180 dc 0 500 1000 1500 2000 2500 3000 3500 0 400 800 1200 1600 2000 2400 i tav ( a ) p t ( w ) y = 30 60 90 120 180 270 dc fig. 5 on-state power loss vs. average on-state current, sine waveform, f = 50 hz, t = 1/f fig. 6 on-state power loss vs. average on-state current, square waveform, f = 50 hz, t = 1/f 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 2400 i tav ( a ) t c ( c ) 180 60 90 120 y = 30 dc 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 2400 i tav ( a ) t c ( c ) 180 dc 270 120 90 60 y = 30 fig. 7 max. case temperature vs. aver. on-state current, sine waveform, f = 50 hz, t = 1/f fig. 8 max. case temperature vs. aver. on-state current, square waveform, f = 50 hz, t = 1/f notes:
|
