GBO25-16NO1 1~ rectifier bridge standard rectifier - ~ + ~ part number GBO25-16NO1 backside: isolated features / advantages: applications: package: low forward voltage drop planar passivated chips easy to mount with one screw space and weight savings supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors gbfp industry standard outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting base plate: plastic overmolded tab reduced weight isolation voltage: v~ 2500 rrm 1600 i25 fsm 370 dav v = v a a = = i 3~ rectifier 1~ ixys reserves the right to change limits, conditions and dimensions. 20130527b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
GBO25-16NO1 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.06 r 4.3 k/w r min. 25 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 105 p tot 35 w t = 25c c r k/w 10 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.17 t = 25c vj 150 v f0 v 0.74 t = c vj 175 r f 16.3 m ? v 0.92 t = c vj i = a f v 10 1.09 i = a f 20 i = a f 20 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 370 400 495 480 a a a a 315 340 685 665 1600 dav d = rectangular 0.5 bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.50 ixys reserves the right to change limits, conditions and dimensions. 20130527b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
GBO25-16NO1 r thja thermal resistance junction to ambient k/w 50 ratings gbo 25-xxno1 xxxx date code package t vj c m d nm 0.8 mounting torque 0.5 t stg c 150 storage temperature -55 weight g 7 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 120 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 4.9 2.5 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 70 a per terminal 175 -40 terminal to terminal gbfp delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol GBO25-16NO1 500240 tube 16 GBO25-16NO1 standard 2080 2500 isol threshold voltage v 0.74 m ? v 0 max r 0 max slope resistance * 13.7 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130527b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
GBO25-16NO1 dim. min. max. a 29.7 30.3 b 19.7 20.3 c 17.0 18.0 d4.74.9 e10.811.2 f2.32.7 g3.13.4 h3.43.8 i4.44.8 j2.52.9 k0.60.8 l2.02.4 m0.91.1 n 9.8 10.2 o7.37.7 p3.84.2 q (3.0) x 45 r (?) 3.1 3.4 all dimensions in millimeter g - ~ + ~ outlines gbfp ixys reserves the right to change limits, conditions and dimensions. 20130527b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
GBO25-16NO1 0 1 1 0 200 400 600 800 v f [v] i f [a] 0.4 0.8 1.2 1.6 0 20 40 60 10 -3 10 -2 10 -1 10 0 150 200 250 300 1 10 100 1000 10000 0 1 2 3 4 5 0 255075100125150175 0481216 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0 10 20 30 40 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i f(av)m [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] constants for z thjc calculation: ir th (k/w) t i (s) 1 0.302 0.002 2 1.252 0.032 3 1.582 0.227 4 1.164 0.820 0.8 x v rrm 50 hz t vj =45c v r =0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =25c t vj =150c t vj =150c fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t vs. time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance junction to case vs. time per diode dc = 1 0.5 0.4 0.33 0.17 0.08 t vj =45c rectifier ixys reserves the right to change limits, conditions and dimensions. 20130527b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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