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  dmn2104l new product features ? low on-resistance ? 53m @v gs = 4.5v ? 104m @v gs = 2.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? lead, halogen and antimony free, rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v drain current (note 3) i d 4.3 a pulsed drain current (note 4) i dm 15 a thermal characteristics characteristic symbol value units total power dissipation (note 3) p d 1.4 w thermal resistance, junction to ambient (note 3) r ja 90 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 500 na v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 0.45 ? 1.4 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 42 84 53 104 m v gs = 4.5v, i d = 4.2a v gs = 2.5v, i d = 3.1a forward transfer admittance |y fs | ? 6.6 ? s v ds =5v, i d = 4.2a diode forward voltage (note 5) v sd ? 0.7 1.2 v v gs = 0v, i s = 1.0a dynamic characteristics input capacitance c iss ? 325 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 92 ? pf reverse transfer capacitance c rss ? 70 ? pf notes: 1. no purposefully added lead. halogen and antimony free. 3. device mounted on fr-4 pcb, on 2oz copper pad layout with r ja = 90c/w. 4. repetitive rating, pulse width limited by junction temperature. 5. short duration pulse test used to minimize self-heating effect. sot-23 top view e q uivalent circuit top view d g s source gate drain 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2. detail go to our website at www.twtysemi.com


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