super fast recovery diode modules 210 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 qr_1230r30 preliminary 9/12 rev. 2 outline drawing and circuit diagram description: powerex super fast recovery dual diode modules are designed for use in applications requiring fast switching. the modules are isolated for easy mounting with other components on common heatsinks. features: ? super fast recovery time ? rohs compliant ? isolated mounting ? metal baseplate ? low thermal impedance ? 2500v isolating voltage applications: ? free wheeling ? welding and plasma cutting machine qrd qrj qrc 2 3 1 2 3 1 2 3 1 2 3 1 qrf d a g h f f l j (3 typ.) e b p (3 typ.) n (2 typ.) c m q (2 typ.) 1 3 2 k (3 typ.) dimensions millimeters a 94 b 80 c 30 d 34 e 40 f 23 g 17 h 13 dimensions millimeters j 12 k m6 l 7.5 m 25.4 n 4 p 19 q 6.5 dia.
qr_1230r30 super fast recovery dual diode modules 210 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 2 9/12 rev. 2 absolute maximum ratings, t j = 25 c unless otherwise specifed QRD1230R30 qrc1230r30 qrf1230r30 ratings symbol qrj1230r30 units repetitive peak reverse blocking voltage v rrm 1200 volts non-repetitive peak reverse blocking voltage v rsm v rrm + 100 volts dc current, t c = 80c (resistive load) i f(dc) 210 amperes peak half cycle non-repetitive surge current (t = 8.3ms, 100% v rrm reapplied) i fsm tbd amperes i 2 t for fusing for one cycle (t = 8.3ms, 100% v rrm reapplied) i 2 t tbd a 2 sec operating junction temperature t j -40 to 150 c storage temperature t stg -40 to 150 c maximum mounting torque, m6 mounting screw 26 in-lb maximum mounting torque, m6 terminal screw 26 in-lb module weight (typical) 180 grams v isolation (60 hz, circuit to base, all terminals shorted, t = 60 sec) v rms 2500 volts electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units reverse leakage current i rrm rated v rrm 1.0 ma on-state voltage v fm i f = 150a 2.4 3.2 volts i f = 210a 2.7 3.5 volts reverse recovery time t rr i f = 150a, di/dt = tbd 150 ns reverse recovery charge q rr i f = 150a, di/dt = tbd 14.4 c thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case* r th(j-c) q per diode 0.10 c/w contact thermal resistance, case to sink r th(c-s) per module 0.05 c/w (lubricated)* *t c , t f measured point is just under the chip.
qr_1230r30 super fast recovery dual diode modules 210 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 3 9/12 rev. 2 on-state current, i fm , (amperes) reverse recovery time, t rr , (ns) reverse recovery current, i rr , (amperes) reverse recovery characteristics (typical) tbd on-state current, i fm , (amperes) reverse recovery switching loss, e rr , (mj/pulse) reverse recovery switching loss (typical) tbd 180 120 90 60 30 15 maximum on-state power dissipation (sinusoidal waveform) 900 600 700 800 400 500 300 200 100 0 maximum power dissipation per diode, (watts) average on-state current, i f(avg) , (amperes) 0 50 100 150 200 conduction angle 0 360 180 180 120 90 60 30 15 maximum allowable case temperature (sinusoidal waveform) 150 130 110 70 90 50 maximum case temperature, t case , (c) average on-state current, i f(avg) , (amperes) 0 40 80 120 200 160 conduction angle 0 360 180 360 180 270 120 90 60 30 15 maximum on-state power dissipation (rectangular waveform) 1200 1000 800 200 600 400 0 maximum power dissipation per diode, (watts) average on-state current, i f(avg) , (amperes) 0 50 100 150 200 300 350 250 270 360(dc) 180 120 90 60 30 15 maximum allowable case temperature (rectangular waveform) 150 130 110 90 70 50 30 maximum case temperature, t case , (c) average on-state current, i f(avg) , (amperes) 0 50 100 150 200 300 350 250 conduction angle 0 360 180 conduction angle 0 360 180 0 1 3 4 2 5 30 on-state voltage, v fm , (volts) on-state characteristics (typical) 300 3000 on-state current, i fm , (amperes) transient thermal impedance characteristics 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') t j = 25c t j = 125c single pulse t c = 25c per unit base = r th(j-c) = 0.10c/w
|
