FUO22-16N 3~ rectifier bridge standard rectifier 2 5 1 4 3 part number FUO22-16N backside: isolated features / advantages: applications: package: package with dcb ceramic reduced weight improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for single and three phase bridge configurations i4-pac industry convenient outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting backside: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3000 rrm 1600 3~ rectifier i30 fsm 150 dav v = v a a = = i ixys reserves the right to change limits, conditions and dimensions. 20130215b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
FUO22-16N v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.20 r 3k/w r min. 30 v rsm v 10 t = 25c vj t = c vj ma 1 v = v r t = 25c vj i = a f v t = c c 120 p tot 50 w t = 25c c r k/w 10 1600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.62 t = 25c vj 150 v f0 v 0.81 t = c vj 175 r f 31 m ? v 1.12 t = c vj i = a f v 10 1.73 i = a f 30 i = a f 30 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 4 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 150 160 85 82 a a a a 130 140 115 105 1600 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.20 ixys reserves the right to change limits, conditions and dimensions. 20130215b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
FUO22-16N ratings ixys date code part no. logo ul listed product marking package t vj c t stg c 150 storage temperature -55 weight g 9 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 120 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 1.7 5.1 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 35 a per terminal 175 -55 terminal to terminal i4-pac delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol FUO22-16N 500357 tube 25 FUO22-16N standard 2500 3000 isol threshold voltage v 0.81 m ? v 0 max r 0 max slope resistance * 28 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130215b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
FUO22-16N b4 4x e e w a a2 a1 c 4x b2 5x b e1 d1 d2 l1 ld r q 12 5 34 d3 di e konv e x e f o r m des s ubst r ates ist t y p . < 0 .05 mm be r der kunststoffoberfl?che der bauteilunterseite the convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side min max min max a 4.83 5.21 0.190 0.205 a1 2.59 3.00 0.102 0.118 a2 1.17 2.16 0.046 0.085 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 c 0.51 0.74 0.020 0.029 d 20.80 21.34 0.819 0.840 d1 14.99 15.75 0.590 0.620 d2 1.65 2.03 0.065 0.080 d3 20.30 20.70 0.799 0.815 e 19.56 20.29 0.770 0.799 e1 16.76 17.53 0.660 0.690 e 3.81 bsc 0.150 bsc l 19.81 21.34 0.780 0.840 l1 2.11 2.59 0.083 0.102 q 5.33 6.20 0.210 0.244 r 2.54 4.57 0.100 0.180 w - 0.10 - 0.004 dim. millimeter inches 2 5 1 4 3 outlines i4-pac ixys reserves the right to change limits, conditions and dimensions. 20130215b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
FUO22-16N 0.5 1.0 1.5 2.0 0 10 20 30 0 1 1 0 20 40 60 80 100 120 1 10 100 1000 10000 0 1 2 3 050100150 0510 0 4 8 12 16 20 0 50 100 150 200 0 10 20 30 t vj = 25c t vj = 45c 0.001 0.01 0.1 1 60 70 80 90 100 110 120 130 t vj = 45c constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.359 0.1015 2 0.3286 0.1026 3 0.4651 0.4919 4 0.8473 0.62 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] [ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t[ms] t vj = 125c 150c dc = 1 0.5 0.4 0.33 0.17 0.08 r thka k/w 0.6 0.8 1 2 4 8 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 150c t vj =150c 50 hz, 80% v rrm rectifier ixys reserves the right to change limits, conditions and dimensions. 20130215b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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