1 n-channel 60 v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis te ste d ?low q g for high efficiency applications ? primary side switch ? pol ? synchronous rectifier ? dc/dc converter ? amusement system ? industrial ? led backlighting notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. product summ ary v ds (v) r ds(on) ( ? )i d (a) a q g (t yp.) 60 0.0022 at v gs = 10 v 55 27.5 nc 0.0025 at v gs = 6 v 55 0 .0028 at v gs = 4.5 v 50 n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) paramet er symbol lim it unit drain-source voltage v ds 60 v gate -source v oltage v gs 20 continuous d r ain current (t j = 150 c ) t c = 25 c i d 55 a a t c = 70 c 55 a t a = 25 c 35 . 8 b, c t a = 70 c 28. 6 b, c pulsed dra i n current (60 s pulse width) i dm 350 continuous sou r ce-drain diode current t c = 25 c i s 55 a t a = 25 c 5.6 b, c single pulse av alanche current l = ? 0.1 mh i as 40 single pulse av alanche energy e as 80 mj maxi m um power dissipation t c = 25 c p d 104 w t c = 70 c 66.6 t a = 25 c 6. 2 5 b, c t a = 70 c 4 b, c ope rating junction and storage temperature range t j , t stg - 55 to 150 c solder ing recommendations (peak temperature) 260 thermal resistance ratings p arameter symb ol t ypical maximum un it maxim um junction-to-ambient t ? 10 s r thja 15 20 c / w maximum junction-to-case (drain) steady state r thjc 0.9 1.2 t o-220ab top v i ew gd s www.din-tek.jp dtl 9 604
2 no tes: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecif ications (t j = 2 5 c, unless otherwise noted) pa ram e ter sy mbol t est c onditions min. typ. max. unit static drain-source breakdown v oltage v ds v gs = 0 v, i d = 250 a 60 v v gs(t h) temper ature coefficient ' v gs(t h) /t j i d = 250 a - 6 mv/c gate-so urce thresho ld voltage v gs(t h) v ds = v gs , i d = 250 a 1 2 .5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na z ero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v , v gs = 0 v, t j = 55 c 10 on-state dr ain current a i d ( on) v ds t 5 v, v gs = 10 v 30 a drain-source on-state re sista nce a r ds(o n ) v gs = 1 0 v, i d = 20 a 0.0018 0.0022 : v gs = 6 v , i d = 20 a 0.0023 0.0025 v gs = 4.5 v, i d = 20 a 0.0025 0.002 8 forward transconductance a g fs v ds = 15 v, i d = 20 a 82 s dy namic b input capacita n ce c iss v ds = 30 v, v gs = 0 v, f = 1 mhz 4365 pf output capacitance c os s 3270 rev erse t ransfer capacitance c rss 177 to tal gate charge q g v ds = 30 v , v gs = 10 v , i d = 20 a 63.5 9 6 nc v ds = 30 v, v gs = 4.5 v, i d = 20 a 27.5 42 gate-s o urce charge q gs 12 gate- dr a in charge q gd 5.9 ga te re sistance r g f = 1 mhz 0.4 1.2 2.4 : tu r n - o n d e l ay t i m e t d(o n) v dd = 30 v, r l = 3 : i d # 10 a, v gen = 10 v, r g = 1 : 14 28 ns rise time t r 11 22 t ur n-off delay time t d(off) 33 60 fa l l time t f 11 22 tu r n - o n d e l ay t i m e t d(o n) v dd = 30 v, r l = 3 : i d # 10 a, v gen = 4.5 v, r g = 1 : 47 90 rise time t r 97 180 t ur n-off delay time t d(off) 32 60 fa l l time t f 13 26 drain- so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 60 a pulse diode forward current a i sm 100 body diode vo ltage v sd i s = 5 a 0.73 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s , t j = 25 c 79 120 ns body diode reverse recovery charge q rr 88 135 nc re verse recovery fall time t a 32 ns re v erse reco very rise time t b 47 z z z g l q w h n m s ' 7 /
3 typical c har acteristics (25 c, unless otherwise noted) output char ac teristics on-resistance vs. drain current and gate voltage gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v ds - drain- to- source voltage (v) v gs = 2 v v gs = 10 v thru 4 v v gs = 3 v 0.0000 0.0010 0.0020 0.0030 0.0040 0.0050 0 20 40 60 80 100 r ds(on ) - on- r esistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 13 26 39 52 65 v gs - gate- to-source voltage (v) q g - total gate charge (nc) v ds = 3 0 v v ds = 40 v v ds = 2 0 v i d = 20 a transfer ch aracteristics cap acitance on-resistance vs. junction temperature 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 5.0 i d - drain current (a) v gs - gate- to-source voltage (v) t c = 25 c t c = 12 5 c t c = - 5 5 c 0 1400 2800 4200 5600 7000 0 12 24 36 48 60 c - capacitance (pf) v ds - drain- to- source voltage (v) c iss c oss c rss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on -re sistance (normalized) t j - juncti on temperature ( c) i d = 20 a v gs = 10 v v gs = 4.5 v www.din-tek.jp dtl 9 604
4 typi cal ch aracteristics (25 c, unless otherwise noted) sour ce-drain diode forward voltage threshold voltage 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v sd - s o urce-to-drain voltage (v) t j = 150 c t j = 25 c - 1. 0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 v gs( t h) - variance (v) t j - tem p erature ( c) i d = 250 a i d = 5 m a on-resistance vs. gate-to-so urce vol tage single pulse power, junction-to-ambient 0.000 0.003 0.006 0.009 0.012 0.015 0 2 4 6 8 10 r ds(on ) - on- r esistance () v gs - gate- to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 40 80 120 160 200 0.001 0.01 0.1 1 10 p o wer (w) tim e (s) safe op eratin g area, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain- to- source voltage (v) * v gs > mi ni mum v gs at which r ds(on ) is specified 100 ms limited by r ds(on ) * 1 ms i dm limited t a = 25 c sin gle pulse bvdss l i mited 10 ms 10 s 1 s dc i d limited www.din-tek.jp dtl 9 604
5 typical c har acteristics (25 c, unless otherwise noted) * th e powe r dissipation p d is ba sed on t j(m a x.) = 15 0 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 32 64 96 128 160 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperatur e ( c) pa ckage limited powe r, ju nction-to-case 0 25 50 75 100 125 0 25 50 75 100 125 150 t c - case temperature (c) power (w) powe r, ju nction-to-ambient 0.0 0.6 1.2 1.8 2.4 3.0 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w) www.din-tek.jp dtl 9 604
6 typi cal ch aracteristics (25 c, unless otherwise noted) normalized t h ermal transient im pedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 nor m alized effective transient thermal impedance squar e wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 si ngl e pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 5 4 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. sur face mounted normalized t h ermal transient impedance, junction-to-case 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 no r m alized effective transient thermal impedance squar e wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 sin g le pulse www.din-tek.jp dtl 9 604
1 to-220ab no te s * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inch es dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471 package information www.din-tek.jp
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