2SA836 transistor (pnp) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm : -0.1 a collector-base voltage v (br)cbo : -55 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -10 a , i e =0 -55 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma , i b =0 -55 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb =-18v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -2v , i c =0 -0.05 a dc current gain h fe v ce =-12 v, i c = -2ma 160 500 collector-emitter saturation voltage v cesat i c = -10ma, i b = -1ma -0.5 v base-emitter voltage v be (on) v ce =-12 v, i c = -2ma -0.75 v transition frequency f t v ce =-12 v, i c = -2ma 150 mhz output capacitance c ob v ce =-10v, i e =0,f=1 mhz 4 pf v ce =-6v, i c =0.1 ma, f=1 0hz, r g =10k ? 5 noise figure nf v ce =-6v, i c =0.1 ma, f=1 khz, r g =10k ? 1 db classification of h fe rank c d range 160-320 250-500 1 2 3 to-92 1. emitter 2. collector 3. base 2SA836 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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