2013/09/04 ver.2 page 1 SPN5001 n-channel enhancement mode mosfet description applications the SPN5001 is the n-channel logic enhancement mode power field effect transistor which is produced with high voltage bicmos technology. this device is particularly suited for reducing the no load consumption in pc power, tv power and adapter. ? desk pc power supply ? ac adapter ? lcd tc power supply features pin configuration(sot-23) ? 600v/27ma , r ds(on) = 300 ? @v gs =10v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23 package design part marking 501yw yw: date code
2013/09/04 ver.2 page 2 SPN5001 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN5001s23rgb sot-23 501yw SPN5001s23rgb : tape reel ; pb ? free ; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 600 v gate ?source voltage - continuous v gss 20 v continuous drain current t a =25 i d 27 ma power dissipation t a =25 p d 0.5 w operating junction temperature t j -55 ~ 150 storage temperature range t stg -55 ~ 150 thermal resistance-junction to ambient r ja 250 /w
2013/09/04 ver.2 page 3 SPN5001 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 600 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 3.0 4.5 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =480v,v gs =0v t j =25 25 ua drain-source on-resistance r ds(on) v gs =10v,i d =16ma 300 ? forward transconductance gfs(1) v ds = 10 v, i d =16ma 28 ms dynamic total gate charge q g v dd = 200 v, i d = 0.1 a, v gs = 10 v 1.8 2.5 3.2 nc gate-source charge q gs 1.3 gate-drain charge q gd 0.8 input capacitance c iss v ds = 25 v, f = 1 mhz, v gs = 0 8.8 12.5 16.2 pf output capacitance c oss 7 10 13 reverse transfer capacitance c rss 5 7 9 turn-on time t d(on) v ds = 300 v, i d = 10m a r g = 3.3 ? v gs = 10.0 v r d = 30k ? 11.5 ns t r 14.5 turn-off time t d(off) 14 t f 120
2013/09/04 ver.2 page 4 SPN5001 n-channel enhancement mode mosfet typical characteristics
2013/09/04 ver.2 page 5 SPN5001 n-channel enhancement mode mosfet typical characteristics
2013/09/04 ver.2 page 6 SPN5001 n-channel enhancement mode mosfet typical characteristics
2013/09/04 ver.2 page 7 SPN5001 n-channel enhancement mode mosfet sot-23 package outline
2013/09/04 ver.2 page 8 SPN5001 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan, 115, r.o.c phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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