- 1 - e05x14a66 this ic is esd sensitive device. s pecial handling precautions are required. sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illu strating the operation of the devices. sony cannot as sume responsibility for any problems aris ing out of the use of these circuits. CXG1195XR high power sp5t antenna switch mmic for gsm/umts dual mode description the CXG1195XR is a sp5t antenna swit ch for gsm/umts applications. the low insertion loss on transmit means increased talk time as the tx power amplifier can be operated at a lower output level. on chip logic reduces component count and simplifies pcb layout by allowing direct connection of the switch to digital base band control lines with the cmos logic levels. it r equires 3 cmos control lines. the sony gaas jphemt mmic process is used for low insertion loss. (applications: gsm/umts dual mode handsets) features ? insertion loss (tx) : 0.40db (typ.) at 34dbm (gsm900) 0.50db (typ.) at 32dbm (gsm1800) 0.50db (typ.) at 29dbm (umts2100) package small and low height package size: 20-pin xqfn (2.7mm 2.7mm 0.35mm (typ.)) structure gaas jphemt mmic
CXG1195XR - 2 - absolute maximum ratings (ta = 25 c) ? copper-clad lamination of glass board (4 la yers) : 30mm square, t = 0.8mm, fr-4. note) use this product without exceeding the pd value specified in this specification. if it is used with exceeding the pd value even for a moment, the heat generated by the operation may cause the degradation or breakdown of the product. block diagram ? bias voltage v dd 7v ? control voltage vctl 5 v ? input power max. [tx1] 35 dbm (duty cycle = 12.5 to 50%) ? input power max. [tx2] 33 dbm (duty cycle = 12.5 to 50%) ? input power max. [trx] 32 dbm ? input power max. [all_rx] 13 dbm ? operating temparature topr ?35 to +85 c ? storage temperature tstg ?65 to +150 c ? maximum power dissipation pd 750 mw ant tx1 (gsm850/900) trx (umts) f5 tx2 (gsm1800/1900) f2 rx2 f4 rx1 f3 f1 f8 f6 f9 f7 f10
CXG1195XR - 3 - pin configuration truth table 16 17 18 19 10 9 8 7 gnd v dd ctla ctlb gnd tx1 gnd tx2 20 15 14 13 12 11 1 2 3 4 5 6 ctlc gnd rx1 gnd gnd gnd gnd trx rx2 gnd gnd ant state on path ctla ctlb ctlc f1 f2 f3 f4 f5 f6 f7 f8 f9 f10 1 ant ? tx1 h h l on off off off off off on on on on 2 ant ? tx2 h l l off on off off off on off on on on 3 ant ? rx1 l l/h l off off on off off on on off on on 4 ant ? rx2 l l/h h off off off on off on on on off on 5 ant ? trx h l h off off off off on on on on on off
CXG1195XR - 4 - electrical characteristics (ta = 25 c) item symbol port condition min. typ. max. unit insertion loss il tx1 ? ant *1 ? 0.35 0.50 db tx2 ? ant *2 ? 0.45 0.60 db trx (tx) ? ant *3 ? 0.45 0.60 db ant ? rx1 *4 ? 0.5 0.65 db ant ? rx2 *5 ? 0.65 0.80 db ant ? trx (rx) *6 ? 0.5 0.65 db isolation iso. active path: tx1 ant ? rx1 *1 25 ? db ant ? rx2 25 ? db ant ? tx2 25 ? db 1760 to 1830mhz 25 ? db ant ? trx *1 25 ? db active path: tx2 ant ? rx1 *2 25 ? db ant ? rx2 25 ? db ant ? trx 25 ? db active path: trx ant ? rx1 *3 25 ? db ant ? rx2 25 ? db tx1 ? ant *1 25 ? db tx2 ? ant *2 25 ? db active path: rx1 tx1 ? ant *1 20 ? db tx2 ? ant *2 20 ? db active path: rx2 tx1 ? ant *1 20 ? db tx2 ? ant *2 20 ? db vswr vswr 1.2 ? harmonics 2fo tx1 ? ant *1 ? ?45 ?35 dbm 3fo ? ?35 ?30 dbm 2fo tx2 ? ant *2 ? ?38 ?33 dbm 3fo ? ?33 ?30 dbm 2fo trx ? ant *3 ? ?40 ?35 dbm 3fo ? ?35 ?30 dbm control current ictl vctl = 2.8v ? 20 50 a supply current i dd v dd = 2.8v ? 0.2 0.5 ma switching speed swt ? 5 10 s
CXG1195XR - 5 - note) electrical characteristics are measured with all rf ports terminated in 50 . *1 power incident on tx1, pin = +34dbm (cw), 824 to 915mhz, v dd = 2.8v, tx1 enabled *2 power incident on tx2, pin = +32dbm (cw), 1710 to 1910mhz, v dd = 2.8v, tx2 enabled *3 power incident on trx, pin= +29dbm (cw), 1920 to 1980mhz, v dd = 2.8v, trx enabled *4 power incident on ant, pin = ?5dbm, 869 to 894mhz, 925 to 960mhz, v dd = 2.8v, rx1 enabled *5 power incident on ant, pin = ?5dbm, 1805 to 1880mhz, 1930 to 1990mhz, v dd = 2.8v, rx2 enabled *6 power incident on ant, pin = ?5dbm, 2110 to 2170mhz, v dd = 2.8v, trx enabled dc bias condition (ta = 25 c) item min. typ. max. unit vctl (h) 2.0 2.8 3.6 v vctl (l) 0 ? 0.4 v v dd 2.6 2.8 3.6 v
CXG1195XR - 6 - recommended circuit when using this ic, the following external components should be used: c rf : this capacitor is used for rf decoupling and must be used for all applications. 100pf is recommended. cbypass: this capacitor is used for dc line filtering. 100pf is recommended. gnd cbypass (100pf) cbypass (100pf) cbypass (100pf) cbypass (100pf) c rf (100pf) c rf (100pf) gnd gnd gnd 16 17 18 19 v dd ctla ctlb tx1 tx2 c rf (100pf) 20 15 14 13 12 11 1 2 3 4 5 ctlc rx1 c rf (100pf) c rf (100pf) c rf (100pf) rx2 gnd gnd gnd trx ant gnd gnd gnd 10 9 8 7 6
CXG1195XR - 7 - sony corporation package outline (unit: mm) lead plating specifications item lead material copper alloy solder composition sn-bi bi:1-4wt% plating thickness 5-18m spec.
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