infrared light emitting diodes 1 lna4905l gaas infrared light emitting diode for optical control equipment n features high output power, high-efficiency : (15 mw min.) quick response, high speed modulation (f c = 30 mhz typ.) transparent epoxy resin package n absolute maximum ratings t a = 25 c unit : mm parameter symbol ratings unit power dissipation p d 190 mw forward current(dc) i f 100 ma pulse forward current * i fp 1a reverse voltage(dc) v r 3v operating ambient temperature t opr - 25 to + 85 c storage temperature t stg - 30 to + 100 c parameter symbol conditions min typ max unit total power output p o i f = 50 ma 15 mw peak emission wavelength l p i f = 50 ma 880 nm spectral half band width dl i f = 50 ma 50 nm forward voltage (dc) v f i f = 100 ma 1.7 2.1 v reverse current (dc) i r v f = 3 v 10 m a half-power angle q the angle when the beam intensity is halved 15 deg n electro-optical t a = 25 c 3 c 1 : anode 2 : cathode note) 1. cut-off frequency : 30 mhz 2. led might radiate red light under large current drive. 5.70.2 f 50.2 5.70.2 1 1 4.40.3 14.01.0 12.01.0 2-10.15 2-0.60.15 2.54 * 0.60.15 2 max. not soldered 1 2 note 1. * : indicates root dimensions of lead. 2. a dimension is as a reference figure as coming with no a public difference. note) * : f = 100 hz, duty cycle = 0.1%
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