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FHT856 / 857/858 1 description & features c sot-23 excellent h fe linearity h fe ?O pin assignment _f pin number _? pin name _? sot-23 function b 1 base e 2 emitter c 3 collector maximum ratings(t a =25 ) ~? characteristic ? symbol ? rating ~? unit FHT856 -65 fht857 -45 collector-emitter voltage ?O - lO? v ceo fht858 -30 vdc FHT856 -80 fht857 -50 collector-base voltage ?O - O? v cbo fht858 -30 vdc FHT856 -5 fht857 -5 emitter-base voltage lO - O? v ebo fht858 -5 vdc collector current?continuous ?O - Bm i c -100 madc thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) (t a =25 h? =25 ) 225 mw derate above25 ^ 25 fp p d 1.8 mw/ thermal resistance junction to ambient r j a 556 /w total device dissipation alumina substrate,(2) t a =25 ? Xr 300 mw derate above25 ^ 25 fp p d 2.4 mw/ thermal resistance junction to ambient r j a 417 /w junction and storage temperature Y??? t j , t stg 150 -55 ~ 150 device marking FHT856a=3a (110~220),FHT856b=3b(200~450), fht857a=3e (110~220),fht857b=3f(200~450),fht857c=3h(420~800), fht858a=3j (110~220),fht858b=3k(200~450),fht858c=3t(420~800) electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? test condition y?l min ? type ? max ? unit collector cutoff current ?O? i cbo v cb =-30vdc -15 nadc collector-emitter v (br)ceo FHT856 i c =-10madc , -65 vdc
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general purpose transistors general purpose transistors 0
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FHT856 / 857/858 2 fht857 -45 breakdown voltage(3) ?O - lO? fht858 i b =0 -30 FHT856 -80 fht857 -50 collector-base breakdown voltage ?O - O? v (br)cbo fht858 i c =-10 adc, i e =0 -30 vdc FHT856 -5.0 fht857 -5.0 emitter-base breakdown voltage lO - O? v (br)ebo fht858 i e =-10 adc, i c =0 -5.0 vdc FHT856 110 450 fht857 110 800 dc current gain ? h fe fht858 i c =-2.0madc, v ce =-5.0vdc 110 800 ic=-10madc, i b =-0.5madc -0.3 collector-emitter saturation voltage ?O - lO?? v ce(sat) ic=-100madc, i b =-5.0madc -0.65 vdc ic=-10madc, i b =-0.5madc -0.7 base-emitter saturation voltage O - lO?? v be(sat) ic=-100madc, i b =-5.0madc -0.9 vdc ic=-2.0madc, v ce =-5.0vdc -600 -750 base-emitter on voltage O - lO ? v be(on) ic=-10madc, v ce =-5.0vdc -820 mv current-gain-bandwidth product - ?e f t ic=-10madc, v ce =-5.0vdc, f=100mhz 100 mhz output capacitance ? c obo v cb =-10vdc, i e =0,f=1.0mhz 4 pf noise figure s?S nf r s =2.0k , bw=200hz v ce =-5.0vdc, i c =-200 adc, f=1.0khz 10.0 db 1. fr-5=1.0 0.750.062in . 2. alumina=0.40.3 0.024in, 99.5%alumina . 3. pulse widt h 300s;duty cycl e 2.0 .
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