unisonic technologies co., ltd utm2513 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r502-228.a n-channel enhancement mode ? features * r ds(on) = 10.5m ? (typ.) @v gs = 10 v * r ds(on) = 16m ? (typ.) @v gs = 4.5 v * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain lead-free: utm2513l halogen-free: utm2513g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing utm2513-tn3-r utm2513l-tn3-r utm2513g-tn3-r to-252 g d s tape reel UTM2513-TN3-T utm2513l-tn3-t utm2513g-tn3-t to-252 g d s tube
utm2513 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-228.a ? absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 25 v gate-source voltage v gss 20 v continuous drain current i d 40 a pulsed drain current i dm 90 a power dissipation p d 50 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. pulse width limited by t j(max) ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i ds =250a 25 v drain-source leakage current i dss v ds =24v, v gs =0v 1 a gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i ds =250a 1.30 1.80 2.50 v v gs =10v, i ds =12a 10.5 13 drain-source on-state resistance(note) r ds(on) v gs =4.5v, i ds =10a 16 23 m ? dynamic characteristics input capacitance c iss 1560 pf output capacitance c oss 345 pf reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 245 pf switching characteristics turn-on delay time (note) t d(on) 30 35 ns turn-on rise time t r 60 67 ns turn-off delay time t d(off) 272 285 ns turn-off fall time t f i ds =1a, v dd =15v, r g =3 ? , 168 172 ns total gate charge (note) q g 28 38 nc gate-source charge q gs 3.6 nc gate-drain charge q gd v ds =15v, v gs =10v, i ds =10a 8.4 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note) v sd i sd =10a, v gs =0v 0.9 1.3 v note: pulse width 300us, duty cycle 2%
utm2513 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-228.a ? typical characteristics drain current, i d (a)
utm2513 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-228.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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