shantou huashan electronic devices co.,ltd . applications medium power linear switching applications absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions i cbo collector cut-off current 100 a v cb =80v, i e =0 i ebo emitter cut-off current 1 ma v eb =5v, i c =0 *h fe 1 dc current gain 40 250 v ce =2v, i c =150ma *h fe 2 dc current gain 15 v ce =2v, i c =1a *v ce(sat) collector- emitter saturation voltage 0.8 v i c =1a, i b =0.1a *v be(on) base-emitter on voltage 1.3 v v ce =2v, i c =1a v ceo(sus) collector-emitter sustaining voltage 80 v i c =100ma, i b =0 f t current gain-bandwidth product 3 mhz v ce =10v, i c =250ma, *pulse test:pw=350s,duty cycle=1.5% pulsed h fe(3) classification cassification 6 10 16 h fe(3) 40~100 63~160 100~250 npn silicon transistor t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 30w v cbo collector-base voltage 80v v ceo collector-emitter voltage 80v v ebo emitter-base voltage 5v i c collector current pulse 7a i c collector current dc 3a HSBD179 1 D emitter, e 2 D collector c 3 D base b
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