DIM2400ESM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 1/10 www.dynexsemi.com features 10 s short circuit withstand high thermal cycling capability non punch through silicon isolated mmc base with aln substrates applications high reliability inverters motor controllers traction drives the powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600v to 3300v and currents up to 2400a. the DIM2400ESM17-A000 is a single switch 1700v, n channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus full 10 s short circuit withstand. this module is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DIM2400ESM17-A000 note: when ordering, please use the whole part number. key parameters v ces 1700v v ce(sat) * (typ) 2.7v i c (max) 2400a i c(pk) (max) 4800a *(measured at the power busbars and not the auxiliary terminals) DIM2400ESM17-A000 single switch igbt module replaces march 2002, version ds5447-3.0 ds5447-4.1 july 2002 fig. 1 single switch circuit diagram fig. 2 electrical connections - (not to scale) outline type code: e (see package details for further information) c2 c1 aux c g aux e e1 e2 e3 external connection external connection c3
DIM2400ESM17-A000 2/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise test conditions v ge = 0v - t case = 75?c 1ms, t case = 110?c t case = 25?c, t j = 150?c v r = 0, t p = 10ms, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz iec1287. v 1 = 1800v, v 2 = 1300v, 50hz rms symbol v ces v ges i c i c(pk) p max i 2 t v isol q pd units v v a a w ka 2 s v pc max. 1700 20 2400 4800 20800 1080 4000 10 parameter collector-emitter voltage gate-emitter voltage continuous collector current peak collector current max. transistor power dissipation diode i 2 t value (igbt arm) isolation voltage - per module partial discharge - per module
DIM2400ESM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 3/10 www.dynexsemi.com thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 32mm clearance: 20mm cti (critical tracking index): 175 test conditions continuous dissipation - junction to case continuous dissipation - junction to case mounting torque 5nm (with mounting grease) transistor diode - mounting - m6 electrical connections - m4 electrical connections - m8 parameter thermal resistance - transistor thermal resistance - diode thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque symbol r th(j-c) r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c/kw ?c ?c ?c nm nm nm max. 6 13.3 6 150 125 125 5 2 10 typ. - - - - - - - - - min. - - - - - C40 - - -
DIM2400ESM17-A000 4/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com min. - - - 4.5 - - - - - - - - - - - electrical characteristics t case = 25?c unless stated otherwise. test conditions v ge = 0v, v ce = v ces v ge = 0v, v ce = v ces , t case = 125?c v ge = 20v, v ce = 0v i c =120ma, v ge = v ce v ge = 15v, i c = 2400a v ge = 15v, i c = 2400a, , t case = 125?c dc t p = 1ms i f = 2400a i f = 2400a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz - - t j = 125?c, v cc = 1000v, i 1 t p 10 s, v ce(max) = v ces C l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward current diode maximum forward current diode forward voltage input capacitance module inductance internal transistor resistance short circuit. i sc symbol i ces i ges v ge(th) v ce(sat) ? i f i fm v f ? c ies l m r int sc data units ma ma a v v v a a v v nf nh m ? a a max. 3 75 12 6.5 3.2 4.0 2400 4800 2.5 2.6 - - - - - typ. - - - 5.5 2.7 3.4 - - 2.2 2.3 180 10 0.27 11000 9600 note: ? measured at the power busbars and not the auxiliary terminals) * l is the circuit inductance + l m
DIM2400ESM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 5/10 www.dynexsemi.com units ns ns mj ns ns mj c c a mj max. - - - - - - - - - typ. 2000 200 900 800 300 475 27 450 1200 300 min. - - - - - - - - - test conditions i c = 2400a v ge = 15v v ce = 900v r g(on) = r g(off) = 1.0 ? l ~ 50nh i f = 2400a, v r = 50% v ces , di f /dt = 8500a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery energy electrical characteristics t case = 25?c unless stated otherwise symbol t d(off) t f e off t d(on) t r e o q g q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns ns mj c a mj max. - - - - - - - - - typ. 2300 250 1200 900 300 750 750 1400 600 min. - - - - - - - - - test conditions i c = 2400a v ge = 15v v ce = 900v r g(on) = r g(off) = 1.0 ? l ~ 50nh i f = 2400a, v r = 50% v ces , di f /dt = 8000a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss diode reverse recovery charge diode reverse current diode reverse recovery energy symbol t d(off) t f e off t d(on) t r e on q rr i rr e rec
DIM2400ESM17-A000 6/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com typical characteristics fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance 0 600 1200 1800 2400 3000 3600 4200 4800 5400 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 collector-emitter voltage, v ce - (v) collector current, i c - (a) v ge = 20v 15v 12v 10v common emitter t case = 25 ? c v ce is measured at power busbars and not the auxiliary terminals 0 600 1200 1800 2400 3000 3600 4200 4800 5400 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 collector-emitter voltage, v ce - (v) collector current, i c - (a) v ge = 20v 15v 12v 10v common emitter t case = 125 ? c v ce is measured at power busbars and not the auxiliary terminals 0 200 400 600 800 1000 1200 1400 0 400 800 1200 1600 2000 2400 collector current, i c - (a) switching energy - (mj) e rec e off e on t case = 125 ? c v cc = 900v, r g = 1? l ~ 50n h 0 500 1000 1500 2000 2500 3 000 00 . 511 . 522 . 5 33. 544 . 55 g ate resistance, r g - ( o hms) switching energy (mj) e rec e off e on t case = 125 ? c i c = 2400a r g = 1? l ~ 50n h
DIM2400ESM17-A000 caution : this de v ice is sensiti v e to electrostatic discharge . u sers should follow es d handling procedures . 7/10 www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance 0 600 1200 1800 2400 3 000 3 600 4200 4800 0 0 . 51 . 01 . 5 2 . 0 2 . 5 3. 0 3. 5 f oward v oltage, v f - (v) f oward current, i f - (a) t j = 25 ? c t j = 125 ? c v f is measured at power busbars and not the auxiliary terminals 0 500 1000 1500 2000 2500 3 000 3 500 4000 4500 5000 0 200 400 600 800 1000 1200 1400 1600 1800 collector emitter v oltage, v ce - (v) collector current, i c - (a) t case = 125 ? c v ge = 15v m odule i c chip i c 0 500 1000 1500 2000 2500 0 200 400 600 800 1000 1200 1400 1600 1800 re v erse v oltage, v r - (v) re v erse reco v ery current, i rr - (a) t case =125 ? c 0 . 01 0 . 1 1 10 100 0 . 001 0 . 01 1 0 . 1 10 p ulse width, t p - (s) transient thermal impedance, z th ( j -c) - ( c /kw ) igbt r i (?c/kw) i ( ms) diode r i ( ? c/kw) i (ms) 1 0.19 0.12 0.41 0.11 2 1.33 3.89 3.09 4.24 3 1.88 47.15 4.32 48.75 4 2.60 257.21 5.51 256.75 d iode transistor
DIM2400ESM17-A000 8/10 caution : this de v ice is sensiti v e to electrostatic discharge . u sers should follow es d handling procedures . www.dynexsemi.com fig. 11 dc current rating vs case temperature 0 500 1000 1500 2000 2500 3 000 3 500 4000 4500 0 20 40 60 80 100 120 140 case temperature, t case - ( ? c) dc collector current, i c - (a)
DIM2400ESM17-A000 caution : this de v ice is sensiti v e to electrostatic discharge . u sers should follow es d handling procedures . 9/10 www.dynexsemi.com package details f or further pac k age information, please v isit our website or contact customer ser v ices . all dimensions in mm, unless stated otherwise . do no t sca l e . n ominal weight : 1 7 00g module outline type code: e
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
|
