2002. 1. 24 1/4 semiconductor technical data ktx111t epitaxial planar npn/pnp transistor revision no : 1 general purpose application. features including two devices in ts6. (thin super mini type with 6 pin) simplify circuit design. reduce a quantity of parts and manufacturing process. dim millimeters a b d e ts6 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k k b e c l h j j i 2 3 5 16 4 + _ + _ + _ + _ + _ 1. q emitter 4. q emitter 3. q collector 5. q base 6. q collector 1 2 2. q base 1 1 2 2 q1 maximum ratings (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 500 emitter current i e -500 characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -500 emitter current i e 500 characteristic symbol rating unit collector power dissipation p c * 0.9 w junction temperature t j 150 storage temperature range t stg -55 150 equivalent circuit (top view) 1 q1 q2 23 65 4 h rank fe type name marking lot no. b 123 654 q2 maximum ratings (ta=25 ) q1, q2 maximum ratings (ta=25 ) * package mounted on a ceramic board (600 0.8 )
2002. 1. 24 2/4 ktx111t revision no : 1 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 dc current gain h fe (1) (note) v ce =1v, i c =100 70 - 240 h fe (2) (note) v ce =6v, i c =400 25 - - collector-emitter saturation voltage v ce(sat) i c =100 , i b =10 - 0.1 0.25 v base-emitter voltage v be v ce =1v, i c =100 - 0.8 1.0 v transition frequency f t v ce =6v, i c =20 - 300 - collector output capacitance c ob v cb =6v, i e =0, f=1 - 7.0 - note) h fe (1) classification o:70~140, y:120~240. h fe (2) classification o:25(min), y:40(min). q 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =-35v, i e =0 - - -0.1 emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 dc current gain h fe (1) (note) v ce =-1v, i c =-100 70 - 240 h fe (2) (note) v ce =-6v, i c =-400 25 - - collector-emitter saturation voltage v ce(sat) i c =-100 , i b =-10 - -0.1 -0.25 v base-emitter voltage v be v ce =-1v, i c =-100 - -0.8 -1.0 v transition frequency f t v ce =-6v, i c =-20 - 200 - collector output capacitance c ob v cb =-6v, i e =0, f=1 - 13 - note) h fe (1) classification o:70~140, y:120~240. h fe (2) classification o:25(min), y:40(min). q 2 electrical characteristics (ta=25 )
2002. 1. 24 3/4 ktx111t revision no : 1 collector current i (ma) c collector-emitter voltage v (v) ce dc current gain h fe collector current i (ma) c be base-emitter voltage v (v) base current i ( a) collector-emitter saturation ce(sat) collector current i (ma) c common emitter ta=25 c 3.0 common emitter common emitter v =6v ce voltage v (v) common emitter i /i =10 cb b 0 0 ce c i - v 10 500 300 10 0.5 h - i i - v 0 2k 5 1 0.01 1 k 300 1 0.5 v - i 12345 100 200 300 400 500 6.0 4.0 2.0 1.0 0.5 i =0.1ma b 0 fe c 1100 330 30 50 100 300 ta=100 c v =6v ce ta=-25 c ta=25 c ce v =1v 0.2 0.4 0.6 0.8 1.0 10 30 50 100 300 500 1k ta=100 c ta=25 c ta=-25 c ce(sat) c 310 30100 0.03 0.05 0.1 0.3 0.5 ta=100 c ta=25 c ta=-25 c 1k bbe q (npn transisor) 1 q (pnp transisor) 2 i - v cce ce collector-emitter voltage v (v) 0-1-2 -100 c 0 collector current i (ma) 10 dc current gain h fe 1k -0.3 collector current i (ma) c c fe h - i -3 -4 -5 -200 -300 -400 -500 -600 common emitter ta=25 c i =-1ma b -2 -3 -4 -5 -6 -7 -8 -1 -3 -10 -30 -100 -300 -1k 30 50 100 300 500 common emitter ta=100 c ta=25 c ta=-25 c v =-1v ce ce v =-6v 0
2002. 1. 24 4/4 ktx111t revision no : 1 i - v b be be base-emitter voltage v (v) 0 -0.2 -0.3 b base current i ( a) collector-emitter saturation ce(sat) -0.01 -0.5 collector current i (ma) c c ce(sat) v - i voltage v (v) -1 -3 -10 -30 -100 -300 -1k -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c -0.4 -0.6 -0.8 -1.0 -1.2 -30 -1 -3 -10 -100 -300 -1k -3k common emitter v =-6v ce ta =100 c ta=25 c ta=-25 c c collector power dissipation p (w) ambient temperature ta ( c ) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 mounted on a ceramic board (600mm ` 0.8mm) 2
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