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www.kersemi.com 1 1/17/05 IRFR24N15DPBF irfu24n15dpbf smps mosfet hexfet power mosfet absolute maximum ratings
high frequency dc-dc converters lead-free benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current v dss r ds(on) max i d 150v 95m ? 24a d-pak irfr24n15d i-pak irfu24n15d parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 24 i d @ t c = 100c continuous drain current, v gs @ 10v 17 a i dm pulsed drain current 96 p d @t c = 25c power dissipation 140 w linear derating factor 0.92 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 4.9 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c parameter typ. max. units r jc junction-to-case ??? 1.1 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance
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parameter min. typ. max. units conditions g fs forward transconductance 8.2 ??? ??? s v ds = 25v, i d = 14a q g total gate charge ??? 30 45 i d = 14a q gs gate-to-source charge ??? 7.4 11 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? 17 26 v gs = 10v, t d(on) turn-on delay time ??? 11 ??? v dd = 75v t r rise time ??? 53 ??? i d = 14a t d(off) turn-off delay time ??? 19 ??? r g = 6.8 ? t f fall time ??? 15 ??? v gs = 10v c iss input capacitance ??? 890 ??? v gs = 0v c oss output capacitance ??? 220 ??? v ds = 25v c rss reverse transfer capacitance ??? 46 ??? pf ? = 1.0mhz c oss output capacitance ??? 1460 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 95 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 200 ??? v gs = 0v, v ds = 0v to 120v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 170 mj i ar avalanche current ??? 14 a e ar repetitive avalanche energy ??? 14 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 14a, v gs = 0v t rr reverse recovery time ??? 110 ??? ns t j = 25c, i f = 14a q rr reverse recoverycharge ??? 450 ??? nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 24 96 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.18 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 82 95 m ? v gs = 10v, i d = 14a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 4 6 8 10 12 14 16 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 175 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 18 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 24a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v
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fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 14a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
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fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
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q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 80 160 240 320 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 5.9a 10a 14a
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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12 in the assembly line "a" as s e mble d on ww 16, 1999 example: wi t h as s e mb l y t his is an irfr120 lot code 1234 year 9 = 199 9 dat e code week 16 part number logo int ernational rect ifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designates lead-free product (optional) note: "p" in ass embly line position indicates "l ead-f r ee" 12 34 we e k 16 a = as s e mb l y s i t e code part number irf u120 line a logo lot code as s e mb l y internat ional rectifier
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as s e mb l y example: with assembly this is an irfu120 year 9 = 199 9 dat e code line a week 19 in the assembly line "a" as s e mble d on ww 19, 1999 lot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in ass embly line pos ition indicates "l ead-f r ee" 56 78 as s e mb l y lot code rectifier logo international irfu120 part number we e k 1 9 dat e code year 9 = 1999 a = as s e mb l y s i t e code p = designates lead-free product (optional)
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repetitive rating; pulse width limited by max. junction temperature. i sd 14a, di/dt 380a/s, v dd v (br)dss , t j 175c.
starting t j = 25c, l = 1.7mh r g = 25 ? , i as = 14a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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