2008. 9. 11 1/2 semiconductor technical data KDS114 silicon epitaxial planar diode revision no : 4 vhf tuner band switch applications. features ? small package. ? small total capacitance : c t =1.2pf(max.). ? low series resistance : r s =0.5 ? (typ.). maximum rating (ta=25 ? ) usc dim millimeters a b c d e f g h j k 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m 4~6 i 1.0 max cathode mark m m i c j g d 2 1 b 1. anode 2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit reverse voltage v r 35 v forward current i f 100 ma junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? characteristic symbol test condition min. typ. max. unit forward voltage v f i f =2ma - - 0.85 v reverse current i r v r =15v - - 0.1 a reverse voltage v r i r =1 a 35 - - v total capacitance c t v r =6v, f=1mhz - 0.7 1.2 pf series resistance r s i f =2ma, f=100mhz - 0.5 0.9 ? marking ud type name lot no.
2008. 9. 11 2/2 KDS114 revision no : 4 i - v f f f forward voltage v (v) 0 10 f forward current i (a) total capacitance c (pf) t 0.3 10 3 1 reverse voltage v (v) r r t c - v forward current i (ma) sf series resistance r ( ? ) 13 0.1 s 30 10 f r - i 100 0.3 0.5 1 3 ta=25 c f=100mhz 30 100 550 0.5 1 3 5 10 ta=25 c f=100mhz 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -4 10 -3 10 -2 10 -1 ta=25 c
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