2011-10-05 1 bdp948_bdp950_bdp954 1 2 3 4 pnp silicon af power transistors ? for af driver and output stages ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary types: bdp947, bdp949 bdp953 (npn) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package bdp948 bdp950 bdp954 bdp948 bdp950 bcp954 1=b 1=b 1=b 2=c 2=c 2=c 3=e 3=e 3=e 4=c 4=c 4=c - - - - - - sot223 sot223 sot223
2011-10-05 2 bdp948_bdp950_bdp954 maximum ratings parameter symbol value unit collector-emitter voltage bdp948 bdp950 bdp954 v ceo 45 60 100 v collector-base voltage bdp948 bdp950 bdp954 v cbo 45 60 120 emitter-base voltage v ebo 5 collector current i c 3 a peak collector current, t p 10 ms i cm 5 base current i b 200 ma peak base current i bm 500 total power dissipation- t s 100 c p tot 5 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 10 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-10-05 3 bdp948_bdp950_bdp954 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bdp948 i c = 10 ma, i b = 0 , bdp950 i c = 10 ma, i b = 0 , bdp954 v (br)ceo 45 60 100 - - - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , bdp948 i c = 100 a, i e = 0 , bdp950 i c = 100 a, i e = 0 , bdp954 v (br)cbo 45 60 120 - - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 45 v, i e = 0 v cb = 45 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 10 ma, v ce = 5 v i c = 500 ma, v ce = 1 v i c = 1 a, v ce = 2 v bdp948,bdp950 bdp954 i c = 1 a, v ce = 2 v h fe 25 85 50 15 - - - - - 475 - - - collector-emitter saturation voltage 1) i c = 2 a, i b = 0.2 a v cesat - - 0.5 v base emitter saturation voltage 1) i c = 2 a, i b = 0.2 a v besat - - 1.3 ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 100 mhz c cb - 40 - pf 1 pulse test: t < 300s; d < 2%
2011-10-05 4 bdp948_bdp950_bdp954 dc current gain h fe = ? ( i c ) v ce = 2 v 10 0 10 1 10 2 10 3 10 4 ma i c 1 10 2 10 3 10 - h fe 100 c 25 c -50 c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 0.1 0.2 0.3 0.4 v 0.6 v cesat 0 10 1 10 2 10 3 10 4 10 ma i c 100c 25c -50c base-emitter saturation voltage i c = ( v besat ), h fe = 10 0 0.2 0.4 0.6 0.8 1 v 1.3 v besat 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c collector current i c = ? ( v be ) v ce = 2 v 0 0.2 0.4 0.6 0.8 1 v 1.3 v be 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c
2011-10-05 5 bdp948_bdp950_bdp954 collector cutoff current i cbo = ? ( t a ) v cb = 45 v 0 20 40 60 80 100 120 c 150 t a -1 10 0 10 1 10 2 10 3 10 4 10 5 10 na i cb0 max typ collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb 0 50 100 150 200 250 300 350 pf 425 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 w 5.5 p tot permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
2011-10-05 6 bdp948_bdp950_bdp954 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-10-05 7 bdp948_bdp950_bdp954 package sot223 package outline foot print marking layout (example) packing reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel 2005, 24 cw date code (yyww) bcp52-16 type code pin 1 12 3 3 4 0.1 0.0 4 0.5 min. 0.28 0.1 max. 15? max. 6.5 0.2 a 4.6 2.3 0.7 0.1 0.25 m a 1.6 0.1 7 0.3 b 0.25 m 0.2 3.5 b 3.5 1.4 4.8 1.4 1.1 1.2 8 0.3 max. 6.8 7.55 12 1.75 pin 1 manufacturer 0...10?
2011-10-05 8 bdp948_bdp950_bdp954 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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