?2008 ixys all rights reserved 1 - 4 20080523a ixkh 47n60c ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25 c, unless otherwise speci ed) min. typ. max. r dson v gs = 10 v; i d = i d100 c 60 70 m v gs(th) v ds = v gs ; i d = 2 ma 2 4 v i dss v ds = v dss ; v gs = 0 v t vj = 25? t vj = 150? 25 250 ? ? i gss v gs = 20 v; v ds = 0 v ?00 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz tbd tbd pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 350 v; i d = 40 a 255 30 110 650 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 380 v i d = 47 a; r g = 4.7 20 27 111 10 ns ns ns ns r thjc 0.3 k/w c pulse test, t < 300 ?, duty cycle d < 2% mosfet symbol conditions maximum ratings v dss t vj = 25? 600 v v gs 20 v i d25 i d100 t c = 25? t c = 100? 47 30 a a e as e ar single pulse i d = 10 a; t c = 25? repetitive i d = 20 a; t c = 25? 1800 tbd mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v tbd v/ns d g s v dss = 600 v i d25 = 47 a r ds(on) max = 70 m coolmos ? 1) power mosfet low r dson , high v dss superjunction mosfet features ?3rd generation superjunction power mosfet - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness applications switched mode power supplies (smps) ?uninterruptible power supplies (ups) ?power factor correction (pfc) ?welding ?inductive heating 1) coolmos is a trademark of in neon technologies ag. to-247 g d s tab q e72873
?2008 ixys all rights reserved 2 - 4 20080523a ixkh 47n60c ixys reserves the right to change limits, test conditions and dimensions. source-drain diode symbol conditions characteristic values (t vj = 25?, unless otherwise speci ed) min. typ. max. i s v gs = 0 v a v sd i f = 40 a; v gs = 0 v v t rr q rm i rm i f = 40 a; -di f /dt = 100 a/?; v r = 640 v ns ? a component symbol conditions maximum ratings t vj t stg operating -55...+150 -55...+150 ? ? m d mounting torque 1.13 nm symbol conditions characteristic values min. typ. max. r thch with heatsink compound tbd k/w weight 2.7 g to-247 outline symbol inches millimeters min max min max a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ?p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ?p1 - 0.291 - 7.39
?2008 ixys all rights reserved 3 - 4 20080523a ixkh 47n60c ixys reserves the right to change limits, test conditions and dimensions. fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 v d s - volts i d - amperes v gs = 10v 7v 5v 6v t p = 300 s fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 45 50 012345 67 v d s - volts i d - amperes v gs = 10v 5v 4v 4.5v t p = 300 s fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 3.5 v d s - volts i d - amperes v gs = 10v 6v 5v 4v 4.5v t p = 300 s fig. 4. r ds(on) norm alized to i d100 v alue vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 30a i d = 15a v gs = 10v t p = 300 s fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d100 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 0 20 40 60 80 100 120 140 160 180 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v t p = 300 s
?2008 ixys all rights reserved 4 - 4 20080523a ixkh 47n60c ixys reserves the right to change limits, test conditions and dimensions. fig. 11. capacitance 10 100 1000 10000 100000 0 102030405060708090100 v ds - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 q g - nanocoulombs v g s - volts v ds = 350v i d = 40a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 22.5 33.5 44.5 55.5 6 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 12. maximum transient thermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c -(oc/w) fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20406080100120 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- dr ain v o lt age 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125oc t j = 25oc
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