the crxxxx range can be used to protect against surges as defined in the following international standards. sa sb sc fcc rules part 68/d metallic 10/560? 50a 100a 100a longitudinal 10/160? 100a 150a 200a bellcore specification tr-nwt-001089 10/1000? 37a 75a 100a 2/10? 500a 100v/? 1kv 1kv 1kv itu k-17 (formerly ccitt) voltage wave form 10/700? 1.5kv 1.5kv current wave form 5/310? 38a 38a vde 0433 voltage wave form 10/700? ? 2kv 4.0kv current wave form 5/310? ? 50a 100a c-net 131-24 voltage wave form 0.5/700? 1.0kv 1.0kv 4.0kv current wave form 0.8/310? 25a 25a 100a iec 1000 -4-5 (discharge through 2 ? impedance) i 8/20? 100a 250a voltage wave form 1-2/50? 300v 500v itu k-20 voltage wave form 10/700? 1000v 1000v 4000v (formerly ccitt) current wave form 5/310? 25a 25a 100a the cr range of protectors are based on the proven technology of the t10 thyristor product. designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (tvs) and when compared to a gdt offers lower voltage clamping levels and infinite surge life. packaged in a transfer moulded do-214aa surface mount outline designed for high speed pick & place machines used in today? surface mount assembly lines. known as the breakover voltage (vbo). when the device is in the vt state, high currents can be diverted without damage to the crxxxx due to the low voltage across the device, since the limiting factor in such devices is dissipated power (v x i). resetting of the device to the non conducting state is controlled by the current flowing through the device. when the current falls below a certain value, known as the holding current (ih), the device resets automatically. as with the avalanche t.v.s. device, if the crxxxx is subjected to a surge current which is beyond its maximum rating, then the device will fail in short circuit mode, this ensures that the equipment is ultimately protected. electrical characteristics the electrical characteristics of an crxxxx device is similar to that of a self gated triac, but the cr is a two terminal device with no gate. the gate function is achieved by an internal current controlled mechanism. like the t.v.s. diodes, the crxxxx has a standoff voltage (vrm) which should be equal to or greater than the operating voltage of the system to be protected. at this voltage (vrm) the current consumption of the crxxxx is negligible and will not effect the protected system. when a transient occurs, the voltage across the crxxxx will increase until the breakdown voltage (vbr) is reached. at this point the device will operate in a similar way to a t.v.s. device and is in an avalanche mode. the voltage of the transient will now be limited and will only increase by a few volts as the device diverts more current. as this transient current rises, a level of current through the device is reached (ibo) which causes the device to switch to a fully conductive state such that the voltage across the device is now only a few volts (vt). the voltage at which the device switches from the avalanche mode to the fully conductive state (vt) is selecting a crxxxx 1. when selecting an crxxxx device, it is important that the vrm of the device is equal to or greater than the operating voltage of the system. 2. the minimum holding current (ih) must be greater than the current the system is capable of delivering otherwise the device will remain conducting following a transient condition. irm ih it ibo vt vbr min vrm vbo v-i graph illustrating symbols and terms for the cr surge protection device description description
electrical characteristics (tj = 25?) symb ol p arameter v rm stand-off voltage i rm stand-off current v br breakdown voltage i bo breakover current v bo breakover voltage i h holding current v t on-state voltage absolute ratings thermal d a t a v al ue unit t stg storage and operating junction temperature range -40 to + 150 ? tj 150 c tl maximum temperature for soldering 230 ? (for period of 10 seconds max) maximum ratings suffix sa ipp 10x160? amps 100 ipp 10x560? amps 50 i tsm 60hz amps 20 dl/dt amps/? 500 maximum ratings suffix sb ipp 10x160? amps 150 ipp 10x560? amps 100 i tsm 60hz amps 30 dl/dt amps/? 500 maximum ratings suffix sc ipp 2x10? amps 500 ipp 10x160? amps 200 ipp 10x560? amps 100 i tsm 60hz amps 60 dl/dt amps/? 500 stock device reverse maximum maximum maximum maximum maximum typical number code stand-off reverse breakover breakover holding on-state capacitance voltage leakage voltage current current voltage @1mhz 2v bias a @ i bo ma ma @1a pf cr 0300 sa 030a 25 5 40 800 150 5 100 cr 0640 sa 064a 58 5 77 800 150 5 60 cr 0720 sa 072a 65 5 88 800 150 5 60 cr 0800 sa 080a 75 5 98 800 150 5 60 cr 1100 sa 110a 90 5 130 800 150 5 60 cr 1300 sa 130a 120 5 160 800 150 5 40 cr 1500 sa 150a 140 5 180 800 150 5 40 cr 1800 sa 180a 160 5 220 800 150 5 40 cr 2300 sa 230a 190 5 260 800 150 5 30 cr 2600 sa 260a 220 5 300 800 150 5 30 cr 3100 sa 310a 275 5 350 800 150 5 30 cr 3500 sa 350a 320 5 400 800 150 5 30 cr 0300 sb 030b 25 5 40 800 150 5 100 cr 0640 sb 064b 58 5 77 800 150 5 60 cr 0720 sb 072b 65 5 88 800 150 5 60 cr 0800 sb 080b 75 5 98 800 150 5 60 cr 1100 sb 110b 90 5 130 800 150 5 60 cr 1300 sb 130b 120 5 160 800 150 5 40 cr 1500 sb 150b 140 5 180 800 150 5 40 cr 1800 sb 180b 160 5 220 800 150 5 40 cr 2300 sb 230b 190 5 260 800 150 5 30 cr 2600 sb 260b 220 5 300 800 150 5 30 cr 3100 sb 310b 275 5 350 800 150 5 30 cr 3500 sb 350b 320 5 400 800 150 5 30 cr 0300 sc 030c 25 5 40 800 150 5 200 cr 0640 sc 064c 58 5 77 800 150 5 120 cr 0720 sc 072c 65 5 88 800 150 5 120 cr 0800 sc 080c 75 5 98 800 150 5 120 cr 1100 sc 110c 90 5 130 800 150 5 120 cr 1300 sc 130c 120 5 160 800 150 5 80 cr 1500 sc 150c 140 5 180 800 150 5 80 cr 1800 sc 180c 160 5 220 800 150 5 80 cr 2300 sc 230c 190 5 260 800 150 5 60 cr 2600 sc 260c 220 5 300 800 150 5 60 cr 3100 sc 310c 275 5 350 800 150 5 60 cr 3500 sc 350c 320 5 400 800 150 5 60 specifications specifications
50 100 90 10 0 80 160 240 320 400 480 t - time - sec peak value - ipp half value = = t r t d ipp 2 10x160 waveform test waveform parameter t = 160 sec d t = 10 sec r ipp - peak pulse current - %ipp 10x160s pulse wave form 50 100 90 10 0 280 560 840 1,120 1,400 1,680 t - time - sec peak value - ipp half value = = t r t d ipp 2 10x560 waveform test waveform parameter t = 560 sec d t = 10 sec r ipp - peak pulse current - %ipp 10x560s pulse wave form junction temperature (t j ) - c percent of v bo change - % -40 -6 -2 2 6 10 14 -8 -4 0 4 8 12 -20 0 20 40 60 80 100 120 140 160 peak instantaneous on-state voltage (v t ) volts peak instantaneous on-state current (i t ) amps 1.0 3.0 5.02.0 4.0 crxxxxsc t c = 25 c 6.0 20 40 60 80 100 120 crxxxxsa crxxxxsb case temperature (t c ) - c ratio of -40 0.4 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i h i h (t c = 25 c) 10 t - time - msec 100 50 i pp - percentage peak current - %i pp 2 90 td = 1000 s tr tr = 1.25 x (t 2 - t 1 ) =10 s t 2 t 1 4 1 3 5 300200 1000 50403020 100 10 8 6 5 4 3 2 1 100 80 60 50 40 30 20 14 3 210 surge current duration - full cycles @ 60h z sinusoidal peak current surge (non-repetitive) on-state current (rms) - amps crxxxxsc crxxxxsa crxxxxsb typical v bo change vs junction temperature on-state voltage (v t ) vs on-state current (i t ) typical dc holding current vs case temperature pulse wave form (10/1000s) peak surge on-state current vs surge current duration
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