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  publication date : apr., 2011 1 < low noise gaas hemt > mgf4934bm 4pin flat lead package description the mgf4934bm super-low noise ingaas hemt (high electron mobility transistor) is designed for use in s to ku band amplifiers. the 4pin flat lead package is small-thin size, and offers high cost performance. features low noise figure @ f=12ghz nfmin. = 0.50db (typ.) high associated gain @ f=12ghz gs = 12.5db (typ.) application s to ku band low noise amplifiers quality grade gg recommended bias conditions v ds =2v , i d =10ma ordering information general part number: MGF4934BM-75 tape & reel 15000pcs/reel rohs compliant mgf4934bm is a rohs compliant product. rohs compliance is indicated by the letter ?g? after the lot marking. absolute maximum ratings (ta=25 ? c ) symbol parameter ratings unit v gdo gate to drain voltage -3 v v gso gate to source voltage -3 v i d drain current idss ma pt total power dissipation 50 mw t ch channel temperature 125 ? c t stg storage temperature -55 to +125 ? c electrical characteristics (ta=25 ? c ) symbol parameter test conditions limits unit min. typ. max v (br)gdo gate to drain breakdown voltage i g =-10 ? a -3.5 -- -- v i gss gate to source leakage current v gs =-2v,v ds =0v -- -- 50 ? a i dss saturated drain current v gs =0v,v ds =2v 12 -- 60 ma v gs(off) gate to source cut-off voltage v ds =2v,i d =500 ? a -0.1 -- -1.5 v gs associated gain v ds =2v, 11.5 12.5 -- db nfmin. minimum noise figure i d =10ma,f=12ghz -- 0.50 0.80 db note: gs and nfmin. are tested with sampling inspection. outline drawing fig.1 mitsubishi proprietary not to be reproduced or disclosed without permission by mitsubishi electric
< low noise gaas hemt > mgf4934bm 4pin flat lead package publication date : apr., 2011 2 0.30 0.11 1.25 2.05 2.10 (0.85) 0.49 +0.1 -0.05 0.1 0.30 -0.05 +0.1 -0.05 +0.1 +0.1 -0.05 -0 +0.05 0.1 0.1 0.05 (0.65) (0.65) 0.05 0.05 0.30 0.40 (0.65) (0.60) 1.30 1.25 (0.65) (0.60) 1.30 1.25 fig.1 top side bottom unit: mm gate source drain (gd-30) b
< low noise gaas hemt > mgf4934bm 4pin flat lead package publication date : apr., 2011 3 typical characteristics (ta=25c) i d vs. v ds i d vs. v gs nf & gs vs. i d gs nf (v ds =2v) (v gs =~0.1v/step) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 5 10 15 20 drain current, id (ma) noise figure, nf (db) 4 5 6 7 8 9 10 11 12 13 14 15 associated gain, gs (db) ta=25 vds=2v f=12ghz 0 10 20 30 40 50 01234 drain to source voltage, v ds (v) drain current, i d (ma) 0 10 20 30 40 50 -1.0 -0.5 0.0 gate to souce voltage, v gs (v) drain current, i d (ma) gs nf
< low noise gaas hemt > mgf4934bm 4pin flat lead package publication date : apr., 2011 4 s parameters (vds=2v,id=10ma,ta=room temperature) noise parameter (v ds =2v,i d =10ma, ta=room temperature)) board: ? r=2.6 thickness: 0.4mm (4- 0.4: through-hole) reference point reference point 0.96 45? drain gate 2.5mm freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.986 -14.0 4.534 163.6 0.014 79.1 0.676 -11.0 2 0.961 -27.8 4.478 148.2 0.027 70.5 0.663 -22.3 3 0.918 -41.9 4.394 132.8 0.038 61.9 0.638 -32.7 4 0.863 -59.4 4.523 116.2 0.052 50.3 0.580 -45.1 5 0.808 -72.1 4.309 102.2 0.060 43.3 0.559 -53.8 6 0.748 -85.2 4.148 88.6 0.067 36.9 0.530 -62.2 7 0.683 -98.1 4.015 75.1 0.073 30.5 0.496 -70.0 8 0.613 -111.9 3.860 61.9 0.078 25.3 0.454 -76.5 9 0.543 -126.8 3.744 49.0 0.082 20.9 0.411 -83.1 10 0.474 -142.9 3.644 35.8 0.087 17.1 0.364 -91.0 11 0.421 -160.9 3.552 22.8 0.092 14.0 0.321 -100.6 12 0.395 177.9 3.488 9.6 0.100 11.1 0.278 -114.7 13 0.395 154.9 3.396 -4.0 0.111 7.6 0.239 -133.9 14 0.433 132.9 3.295 -17.6 0.122 2.2 0.214 -159.5 15 0.491 114.0 3.183 -31.5 0.133 -4.2 0.219 170.8 16 0.559 97.5 3.056 -45.9 0.144 -11.1 0.256 144.4 17 0.630 83.0 2.886 -60.6 0.154 -18.6 0.315 122.4 18 0.692 70.3 2.662 -74.9 0.161 -26.6 0.379 104.1 19 0.739 60.2 2.401 -87.7 0.169 -34.2 0.440 88.4 20 0.787 52.4 2.198 -98.5 0.174 -42.1 0.484 73.6 21 0.828 45.4 2.060 -109.9 0.179 -50.4 0.527 60.5 22 0.866 39.4 1.940 -120.6 0.180 -58.5 0.575 47.9 23 0.894 33.7 1.810 -131.4 0.183 -65.4 0.632 35.7 24 0.921 26.1 1.710 -142.1 0.184 -71.5 0.695 25.4 25 0.937 16.9 1.632 -152.9 0.187 -78.0 0.770 16.7 26 0.936 5.9 1.541 -165.3 0.186 -86.0 0.846 8.8 s11 s21 s12 s22 freq. nfmin rn (ghz) (db) (mag) (ang) ( ? ) 1 0.25 0.99 7.2 17.0 2 0.26 0.98 11.1 15.5 3 0.27 0.95 18.0 13.5 4 0.29 0.92 27.4 12.0 5 0.31 0.89 38.5 10.5 6 0.33 0.82 53.1 9.0 7 0.36 0.75 68.2 7.5 8 0.38 0.67 83.3 6.0 9 0.41 0.60 100.2 4.5 10 0.43 0.53 115.2 3.0 11 0.48 0.47 131.4 2.0 12 0.51 0.42 150.3 1.5 13 0.54 0.37 167.7 1.5 14 0.58 0.35 -178.8 1.5 ? opt note: we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
< low noise gaas hemt > mgf4934bm 4pin flat lead package publication date : apr., 2011 5 s parameters (v ds =0v,v gs =0v,ta=room temperature) (v ds =0v,v gs =-2.5v,ta=room temperature) freq. s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.995 -12.5 0.008 96.4 0.008 97.7 0.673 165.1 2 0.990 -24.6 0.018 100.5 0.018 100.7 0.673 152.1 3 0.991 -37.5 0.032 99.5 0.032 98.9 0.671 138.7 4 0.983 -53.3 0.051 92.5 0.051 94.0 0.694 127.4 5 0.976 -67.1 0.074 85.0 0.075 85.5 0.697 112.5 6 0.961 -81.0 0.099 76.0 0.100 76.5 0.704 97.6 7 0.951 -95.7 0.130 65.5 0.131 65.3 0.719 83.4 8 0.940 -112.3 0.163 53.6 0.163 54.3 0.730 70.8 9 0.913 -130.9 0.196 41.0 0.198 41.3 0.745 59.2 10 0.902 -151.8 0.229 27.1 0.230 27.3 0.759 49.3 11 0.887 -175.9 0.256 12.0 0.257 12.7 0.774 41.2 12 0.883 159.0 0.274 -2.5 0.273 -2.7 0.783 34.8 13 0.884 134.4 0.276 -16.9 0.278 -17.2 0.794 29.2 14 0.889 112.1 0.268 -30.5 0.270 -30.2 0.800 24.0 15 0.896 93.6 0.257 -42.0 0.256 -42.0 0.807 18.7 16 0.907 78.5 0.241 -51.5 0.241 -51.1 0.811 13.2 17 0.911 66.4 0.228 -59.6 0.227 -59.8 0.807 7.1 18 0.919 55.9 0.221 -67.5 0.221 -67.4 0.815 0.6 19 0.924 47.1 0.217 -76.6 0.218 -76.5 0.817 -6.9 20 0.919 38.7 0.204 -87.1 0.204 -86.9 0.814 -14.8 21 0.921 31.2 0.192 -95.0 0.193 -95.3 0.810 -23.2 22 0.924 24.3 0.179 -103.1 0.179 -103.2 0.811 -31.2 23 0.928 18.1 0.168 -110.3 0.168 -110.6 0.817 -39.2 24 0.950 11.6 0.159 -116.7 0.157 -116.3 0.816 -46.5 25 0.970 5.4 0.149 -122.1 0.150 -122.1 0.830 -53.8 26 0.978 -1.5 0.141 -128.2 0.141 -128.3 0.844 -61.8 s11 s21 s12 freq. s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.993 -9.6 0.022 78.7 0.022 79.0 0.998 -10.6 2 0.996 -18.9 0.044 68.6 0.044 68.8 1.000 -21.3 3 0.992 -28.3 0.065 59.8 0.065 59.2 0.991 -31.2 4 0.987 -39.7 0.092 48.4 0.092 48.4 0.984 -42.1 5 0.981 -49.5 0.112 38.8 0.112 38.8 0.986 -51.5 6 0.975 -59.1 0.131 28.8 0.130 29.1 0.980 -60.6 7 0.968 -68.8 0.150 19.2 0.150 19.2 0.975 -70.1 8 0.963 -79.2 0.169 7.7 0.168 8.0 0.968 -80.7 9 0.949 -89.9 0.185 -4.5 0.186 -4.3 0.959 -92.1 10 0.943 -102.2 0.200 -18.4 0.200 -18.5 0.949 -105.6 11 0.932 -117.2 0.209 -34.7 0.209 -34.4 0.943 -121.1 12 0.929 -134.6 0.207 -52.4 0.207 -52.8 0.932 -139.6 13 0.932 -155.8 0.187 -73.4 0.188 -73.6 0.928 -160.7 14 0.938 -179.2 0.148 -96.3 0.149 -96.7 0.942 176.8 15 0.940 156.2 0.091 -119.2 0.091 -119.3 0.947 153.6 16 0.948 133.1 0.033 -137.6 0.034 -136.8 0.953 132.4 17 0.951 112.7 0.018 9.9 0.018 9.0 0.957 112.9 18 0.952 95.4 0.058 0.6 0.058 0.5 0.965 94.8 19 0.956 80.9 0.091 -11.2 0.090 -11.3 0.964 79.2 20 0.951 68.1 0.117 -24.5 0.118 -24.3 0.960 64.6 21 0.953 57.2 0.138 -37.5 0.137 -37.3 0.954 50.5 22 0.946 47.5 0.150 -49.7 0.150 -49.6 0.947 37.4 23 0.950 38.8 0.157 -60.4 0.157 -60.2 0.952 24.9 24 0.965 30.8 0.161 -69.7 0.161 -70.1 0.963 13.3 25 0.982 23.3 0.162 -77.8 0.162 -77.6 0.981 1.6 26 0.993 15.4 0.163 -85.8 0.163 -85.8 0.995 -10.3 s11 s21 s12 note: we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
< low noise gaas hemt > mgf4934bm 4pin flat lead package publication date : apr., 2011 6 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! ? mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibilit y that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire ore property damage. remember to give due consideration to safety when making your circuit design s, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non -flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assi st our customers in the se lection of the mitsubishi semiconductor product best suited to the customer?s application; they do not c onvey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product dat a, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, in cluding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mi tsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the la test product information before purchasing a product listed herein. the information described here may contain tech nical in accuracies or typographical errors. mitsubishi electric corporation assume s no responsibility for any damage, li ability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubi shielectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the inform ation and products. mitsubishi electric corporation assumes no responsibility fo r any damage, liability or other loss resulting from the information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circum stances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, ae rospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corpor ation is necessary to reprint or reproduce in whole ore in part these materials. ? if these products or technologies are subject to th e japanese export control restrictions, they must be exported under a license from the japanese governm ent and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these ma terials or the products contained therein.


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