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www.irf.com 1 automotive grade features advanced planar technology low on-resistance dual n and p channel mosfet dynamic dv/dt rating 150c operating temperature fast switching lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. so-8 AUIRF7309Q absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is no t implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissi pation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ n-ch p-ch v (br)dss 30v -30v r ds(on) max. 0.05 0.10 i d 4.7a -3.5a d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 p-channel mosfet n-channe l mos fe t parameter units n-channel p-channel i d @ t a = 25c 10 sec. pulsed drain current, v gs @ 10v 4.7 -3.5 i d @ t a = 25c continuous drain current, v gs @ 10v 4-3.0 i d @ t a = 70c continuous drain current, v gs @ 10v 3.2 -2.4 i dm pulsed drain current 16 -12 p d @t a = 25c power dissipation linear derating factor w/c v gs gate-to-source voltage v dv/dt peak diode recovery dv/dt 6.9 -6.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) ??? 90 c/w -55 to + 150 max. 1.4 0.011 20 w a c 2 www.irf.com ! "# $ % n-channel i sd &'( )'*(+ + (, -./ p-channel i sd 01'( 2'*(+ + (, -./ 3 * 4 5 ! !67 3/8"9 0&!:0; %9! ! $!! ! 7 $ ! !! <'=022& static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units n-ch 30 ??? ??? v p-ch -30 ??? ??? n-ch ??? 0.032 ??? v/c p-ch ??? -0.037 ??? ??? ??? 0.050 ??? ??? 0.080 ??? ??? 0.10 ??? ??? 0.16 n-ch 1.0 ??? 3.0 v p-ch -1.0 ??? -3.0 n-ch 5.2 ??? ??? s p-ch 2.5 ??? ??? n-ch ??? ??? 1.0 p-ch ??? ??? -1.0 n-ch ??? ??? 25 p-ch ??? ??? -25 i gss gate-to-source forward leakage n-p ??? ??? -100 gate-to-source reverse leakage n-p ??? ??? 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units n-ch ??? ??? 25 p-ch ??? ??? 25 n-ch ??? ??? 2.9 p-ch ??? ??? 2.9 n-ch ??? ??? 7.9 n-ch ??? ??? 9.0 p-ch ??? 6.8 ??? n-ch ??? 11 ??? p-ch ??? 21 ??? n-ch ??? 17 ??? n-ch ??? 22 ??? p-ch ??? 25 ??? n-ch ??? 7.7 ??? p-ch???18??? l d internal drain inductance n-p ??? 4.0 ??? between lead, nh 6mm (0.25in.) l s internal source inductance n-p ??? 6.0 ??? from package and center of die contact n-ch ??? 520 ??? p-ch ??? 440 ??? v gs = 0v, v ds = 15v, ? = 1.0mhz n-ch ??? 180 ??? p-ch ??? 200 ??? n-ch ??? 72 ??? v gs = 0v, v ds = -15v, ? = 1.0mhz p-ch???93??? diode characteristics parameter min. typ. max. units n-ch ??? ??? 1.0 v p-ch ??? ??? -1.0 n-ch ??? 47 71 ns n-channel p-ch ??? 53 80 t j = 25c,i f =2.6a, di/dt = 100a/ s n-ch ??? 56 84 nc p-channel p-ch ??? 66 99 t j = 25c,i f =-2.2a, di/dt = 100a/ s t on forward turn-on time n-p intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 25c, i s = -1.8a, v gs = 0v t rr reverse recovery time q rr reverse recovery charge ??? ??? -12 v sd diode forward voltage i sm pulsed source current (body diode) p-ch n-ch 16 n-ch p-ch -1.8 ??? ??? i s continuous source current (body diode) r d = 4.5 a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c v gs = -20v t j = 25c, i s = 1.8a, v gs = 0v conditions conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 2.4a v gs = -10v, i d = 1.8a p-ch v gs = 4.5v, i d = 2.0a v gs = -4.5v, i d = 1.5a conditions v ds = 15v, i d = 2.4a n-channel v gs = 20v v ds = v gs , i d = 250 a v (br)dss drain-to-source breakdown voltage v (br)dss / t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs = 0v, i d =-250 a reference to 25c, i d = -1ma n-ch v gs(th) gate threshold voltage forward transconductance gfs i dss drain-to-source leakage current q g total gate charge v ds = v gs , i d = -250 a v ds = -24v, i d = -1.8a v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time p-channel t d(off) turn-off delay time t f fall time input capacitance c oss output capacitance i d = 2.6a, v ds = 16v, v gs = 4.5v p-channel v dd = 10v, i d = 2.6a r g = 6.0 www.irf.com 3 qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model n-ch: class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level p-ch: class m2 (+/- 150v) ??? p-ch: class h0 (+/- 250v) ??? p-ch: class c5 (+/- 2000v) ??? rohs compliant yes esd machine model n-ch: class m2 (+/- 150v) ??? aec-q101-002 human body model n-ch: class h1a (+/- 500v) ??? aec-q101-001 !""##$" %&! %'()(* $ * !# +, !,-,# 4 www.irf.com www.irf.com 5 6 www.irf.com www.irf.com 7 8 www.irf.com www.irf.com 9 10 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? !! ? > !! ?9 !@?@ ? ?a,0? a , / b!/! ! ? b!#> ? :!3 ? b!b c > / ,$! . 3! $!30/ dda 30/ ? $!30/ ; ... + e-+$!b! b +? ? /0' +%1/%23 www.irf.com 11 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking ! 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