white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com 1 hi-reliability product wms128k8-xxx n commercial, industrial and military temperature range n 5 volt power supply n low power cmos n 2v data retention devices available (low power version) n ttl compatible inputs and outputs 128kx8 monolithic sram, smd 5962-96691 (pending) features n access times 70, 85, 100, 120ns n revolutionary, center power/ground pinout jedec approved ? 32 lead ceramic soj (package 101) n evolutionary, corner power/ground pinout jedec approved ? 32 pin ceramic dip (package 300) ? 32 lead ceramic soj (package 101) ? 32 lead ceramic flat pack (package 206) n mil-std-883 compliant devices available evolutionary pinout revolutionary pinout a 0-16 address inputs i/o 0-7 data input/output cs chip select oe output enable we write enable v cc +5.0v power gnd ground pin description 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 nc a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 gnd v cc a15 nc/cs2* we a13 a8 a9 a11 oe a10 cs i/o7 i/o6 i/o5 i/o4 i/o3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a0 a1 a2 a3 cs i/o1 i/o2 v cc gnd i/o3 i/o4 we a4 a5 a6 a7 a16 a15 a14 a13 oe i/o8 i/o7 gnd v cc i/o6 i/o5 a12 a11 a10 a9 a8 32 dip 32 csoj (de) 32 flatpack (fe) top view top view 32 csoj (dr) * nc for single chip select devices cs 2 for dual chip select devices october 2000 rev. 3
2 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com wms128k8-xxx parameter sym conditions -70 -85 -100 -120 units min max min max min max min max input leakage current i li v cc = 5.5, v in = gnd to v cc 10 10 10 10 m a output leakage current i lo cs = v ih , oe = v ih , v out = gnd to v cc 10 10 10 10 m a operating supply current i cc cs = v il , oe = v ih , f = 5mhz, vcc = 5.5 30 30 30 30 ma standby current i sb cs = v ih , oe = v ih , f = 5mhz, vcc = 5.5 1.0 1.0 0.6 0.6 ma output low voltage v ol i ol = 2.1ma, vcc = 4.5 0.4 0.4 0.4 0.4 v output high voltage v oh i oh = -1.0ma, vcc = 4.5 2.4 2.4 2.4 2.4 v note: dc test conditions: v ih = v cc -0.3v, v il = 0.3v absolute maximum ratings truth table recommended operating conditions parameter symbol min max unit operating temperature t a -55 +125 c storage temperature t stg -65 +150 c signal voltage relative to gnd v g -0.5 vcc+0.5 v junction temperature t j 150 c supply voltage v cc -0.5 7.0 v parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.2 v cc + 0.3 v input low voltage v il -0.5 +0.8 v dc characteristics (v cc = 5.0v, gnd = 0v, t a = -55 c to +125 c) data retention characteristics (t a = -55 c to +125 c) cs oe we mode data i/o power h x x standby high z standby l l h read data out active l h h out disable high z active l x l write data in active parameter symbol conditions -70 -85 -100 -120 units min typ max min typ max min typ max min typ max data retention supply voltage v dr cs 3 v cc -0.2v 2.0 5.5 2.0 5.5 2.0 5.5 2.0 5.5 v data retention current i ccdr1 v cc = 3v 20 400 20 400 20 400 20 400 m a capacitance (t a = +25 c) parameter symbol condition package speed (ns) max unit input capacitance c in v in = 0v, f = 1.0mhz 32 pin csoj, dip, 70 to 120 12 pf flat pack evolutionary 32 pin csoj revolutionary 70 to 120 20 pf output capicitance c out v out = 0v, f = 1.0mhz 32 pin csoj, dip, 70 to 120 12 pf flat pack evolutionary 32 pin csoj revolutionary 70 to 120 20 pf this parameter is guaranteed by design but not tested.
white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com 3 wms128k8-xxx parameter symbol -70 -85 -100 -120 units read cycle min max min max min max min max read cycle time t rc 70 85 100 120 ns address access time t aa 70 85 100 120 ns output hold from address change t oh 3333ns chip select access time t acs 70 85 100 120 ns output enable to output valid t oe 35 45 50 60 ns chip select to output in low z t clz 1 5555ns output enable to output in low z t olz 1 5555ns chip disable to output in high z t chz 1 25 25 35 35 ns output disable to output in high z t ohz 1 25 25 35 35 ns 1. this parameter is guaranteed by design but not tested. i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z 0 = 75 w . v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. ac test circuit ac test conditions parameter typ unit input pulse levels v il = 0, v ih = 3.0 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v ac characteristics (v cc = 5.0v, t a = -55 c to +125 c) ac characteristics (v cc = 5.0v, t a = -55 c to +125 c) parameter symbol -70 -85 -100 -120 units write cycle min max min max min max min max write cycle time t wc 70 85 100 120 ns chip select to end of write t cw 60 75 80 100 ns address valid to end of write t aw 60 75 80 100 ns data valid to end of write t dw 30 35 40 50 ns write pulse width t wp 50 55 70 80 ns address setup time t as 0 000ns address hold time t ah 5 555ns output active from end of write t ow 1 5 555ns write enable to output in high z t whz 1 25 30 35 35 ns data hold time t dh 0 000ns 1. this parameter is guaranteed by design but not tested.
4 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com wms128k8-xxx ws32k32-xhx timing waveform - read cycle write cycle - cs controlled write cycle - we controlled address data i/o write cycle 1, we controlled t aw t cw t ah t wp t dw t whz t as t ow t dh t wc data valid cs we address data i/o write cycle 2, cs controlled t aw t as t cw t ah t wp t dh t dw t wc cs we data valid address data i/o read cycle 2 (we = v ih ) t aa t acs t oe t clz t olz t ohz t rc data valid high impedance cs oe t chz address data i/o read cycle 1 (cs = oe = v il , we = v ih ) t aa t oh t rc data valid previous data valid
white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com 5 wms128k8-xxx all linear dimensions are millimeters and parenthetically in inches package 101: 32 lead, ceramic soj 1.27 (0.050) typ 21.1 (0.830) 0.25 (0.010) pin 1 identifier 19.1 (0.750) typ 11.23 (0.442) 0.30 (0.012) 3.96 (0.156) max 0.2 (0.008) 0.05 (0.002) 9.55 (0.376) 0.25 (0.010) 1.27 (0.050) 0.25 (0.010) 0.89 (0.035) radius typ package 206: 32 lead, ceramic flat pack all linear dimensions are millimeters and parenthetically in inches 10.41 (0.410) 0.13 (0.005) 3.18 (0.125) max 0.127 (0.005) + 0.05 (0.002) 0.025 (0.001) pin 1 identifier 1.27 (0.050) typ 7.87 (0.310) 0.13 (0.005) 19.05 (0.750) typ 6.35 (0.250) min 0.43 (0.017) 0.05 (0.002) 20.83 (0.820) 0.25 (0.010)
6 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com wms128k8-xxx package 300: 32 pin, ceramic dip, single cavity side brazed 2.5 (0.100) typ 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.99 (0.039) 0.51 (0.020) 3.2 (0.125) min 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010) 42.8 (1.686) max 5.13 (0.202) max pin 1 identifier all linear dimensions are millimeters and parenthetically in inches
white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com 7 wms128k8-xxx lead finish: blank = gold plated leads a = solder dip leads device grade: m = military screened -55 c to +125 c i = industrial -40 c to +85 c c = commercial 0 c to +70 c package: c = 32 pin ceramic .600" dip (package 300) de = 32 lead ceramic soj (package 101) evolutionary dr = 32 lead ceramic soj (package 101) revolutionary fe = 32 lead ceramic flat pack (package 206) access time (ns) improvement mark c = dual chip select device l = low power for 2v data retention organization, 128k x 8 sram monolithic white microelectronics ordering information parameter symbol conditions units min max data retention supply voltage v dr cs 3 v cc -0.2v 2.0 5.5 v data retention current i ccdr3 v cc = 2v 400 m data retention characteristics (t a = -55 c to +125 c) low power version only w m s 128k 8 x - xxx x x x
8 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com wms128k8-xxx device type speed package smd no. 128k x 8 sram monolithic 120ns 32 lead soj revol (dr) 5962-96691 01hux 128k x 8 sram monolithic 100ns 32 lead soj revol (dr) 5962-96691 02hux 128k x 8 sram monolithic 85ns 32 lead soj revol (dr) 5962-96691 03hux 128k x 8 sram monolithic 70ns 32 lead soj revol (dr) 5962-96691 04hux 128k x 8 sram monolithic 120ns 32 lead soj evol (de) 5962-96691 01htx 128k x 8 sram monolithic 100ns 32 lead soj evol (de) 5962-96691 02htx 128k x 8 sram monolithic 85ns 32 lead soj evol (de) 5962-96691 03htx 128k x 8 sram monolithic 70ns 32 lead soj evol (de) 5962-96691 04htx 128k x 8 sram monolithic 120ns 32 pin dip (c) 5962-96691 01hyx 128k x 8 sram monolithic 100ns 32 pin dip (c) 5962-96691 02hyx 128k x 8 sram monolithic 85ns 32 pin dip (c) 5962-96691 03hyx 128k x 8 sram monolithic 70ns 32 pin dip (c) 5962-96691 04hyx
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