? semiconductor components industries, llc, 2013 august, 2013 ? rev. 0 1 publication order number: ngtb20n120ihr/d NGTB20N120IHRWG igbt with monolithic free wheeling diode this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, provides and superior performance in demanding switching applications, and offers low on ? state voltage with minimal switching loss. the igbt is well suited for resonant or soft switching applications. features ? extremely efficient trench with fieldstop technology ? low switching loss reduces system power dissipation ? optimized for low losses in ih cooker application ? reliable and cost effective single die solution ? these are pb ? free devices typical applications ? inductive heating ? consumer appliances ? soft switching absolute maximum ratings rating symbol value unit collector ? emitter voltage @ t j = 25 c v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 40 20 a pulsed collector current, t pulse limited by t jmax , 10 s pulse, v ge = 15 v i cm 120 a diode forward current @ t c = 25 c @ t c = 100 c i f 40 20 a diode pulsed current, t pulse limited by t jmax , 10 s pulse, v ge = 0 v i fm 120 a gate ? emitter voltage transient gate ? emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 25 v power dissipation @ t c = 25 c @ t c = 100 c p d 384 192 w operating junction temperature range t j ? 40 to +175 c storage temperature range t stg ? 55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340al c g 20 a, 1200 v v cesat = 2.10 v e off = 0.45 mj e device package shipping ordering information NGTB20N120IHRWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 20n120ihr aywwg g e c
NGTB20N120IHRWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case r jc 0.39 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 5 ma v (br)ces 1200 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 20 a v ge = 15 v, i c = 20 a, t j = 175 c v cesat ? ? 2.10 2.30 2.45 ? v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 175 c i ces ? ? ? ? 0.2 2.8 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 5320 ? pf output capacitance c oes ? 124 ? reverse transfer capacitance c res ? 100 ? gate charge total v ce = 600 v, i c = 20 a, v ge = 15 v q g ? 225 ? nc gate to emitter charge q ge ? 36 ? gate to collector charge q gc ? 98 ? switching characteristic, inductive load turn ? off delay time t j = 25 c v cc = 600 v, i c = 20 a r g = 10 v ge = 0 v/ 15v t d(off) ? 235 ? ns fall time t f ? 155 ? turn ? off switching loss e off ? 0.45 ? mj turn ? off delay time t j = 150 c v cc = 600 v, i c = 20 a r g = 10 v ge = 0 v/ 15v t d(off) ? 255 ? ns fall time t f ? 250 ? turn ? off switching loss e off ? 1.10 ? mj diode characteristic forward voltage v ge = 0 v, i f = 20 a v ge = 0 v, i f = 20 a, t j = 175 c v f ? ? 1.75 2.50 2.10 v
NGTB20N120IHRWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 13 10 5 0 160 i c , collector current (a) i c , collector current (a) v ge = 20 to 15 v t j = 25 c 10 v 9 v 8 v 7 v 5 4 3 2 1 0 200 i c , collector current (a) v ge = 20 to 15 v t j = 150 c 10 v 9 v 8 v 7 v 200 i c , collector current (a) v ge = 20 to 13 v t j = ? 40 c 10 v 9 v 8 v t j = 25 c t j = 150 c 11 v 11 v 7 v 8 7 6 11 v 678 150 100 50 0 150 100 50 0 5 4 3 2 1 08 7 6 140 120 100 80 60 40 20 0 1234 67 89 12 11 figure 5. v ce(sat) vs. t j t j , junction temperature ( c) 3.00 v ce , collector ? emitter voltage (v) 75 50 0 ? 25 ? 50 ? 75 200 175 100 i c = 40 a i c = 20 a i c = 10 a 2.50 2.00 1.50 1.00 0.50 0.00 25 125 150 figure 6. typical capacitance v ce , collector ? emitter voltage (v) 100 70 50 10 0 10 100 1000 10,000 c, capacitance (pf) c ies c oes c res 20 30 40 60 90 80 t j = 25 c 200 150 100 50 0 13 v 13 v v ce = 20 v 250 250 250
NGTB20N120IHRWG http://onsemi.com 4 typical characteristics figure 7. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 70 i f , forward current (a) t j = 25 c t j = 150 c 60 50 40 30 20 10 0 figure 8. typical gate charge q g , gate charge (nc) 150 100 50 0 v ge , gate ? emitter voltage (v) 250 200 v ce = 600 v v ge = 15 v i c = 20 a 16 14 12 10 8 6 4 2 0 figure 9. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 switching loss (mj) 160 v ce = 600 v v ge = 15 v i c = 20 a rg = 10 1.2 e off figure 10. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 10 100 1000 switching time (ns) 160 v ce = 600 v v ge = 15 v i c = 20 a rg = 10 t f t d(off) figure 11. switching loss vs. i c i c , collector current (a) 5 switching loss (mj) 6 5 4 3 2 1 0 20 80 65 35 50 v ce = 600 v v ge = 15 v t j = 150 c rg = 10 e off figure 12. switching time vs. i c i c , collector current (a) switching time (ns) 520 80 65 35 50 t f t d(off) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 10 100 1000
NGTB20N120IHRWG http://onsemi.com 5 typical characteristics figure 13. switching loss vs. r g r g , gate resistor ( ) 45 35 25 15 5 1.6 switching loss (mj) 55 65 v ce = 600 v v ge = 15 v t j = 150 c i c = 20 a 75 85 1.4 1.2 1 0.8 0.6 0.4 0.2 0 e off v ce = 600 v v ge = 15 v t j = 150 c i c = 20 a figure 14. switching time vs. r g r g , gate resistor ( ) 45 35 25 15 5 10000 switching time (ns) 55 65 75 85 t f t d(off) figure 15. switching loss vs. v ce v ce , collector ? emitter voltage (v) 450 400 350 300 250 1.6 switching loss (mj) 500 700 750 800 1.4 1.2 1 0.8 0.6 0.4 0.2 0 550 600 650 i c = 20 a v ge = 15 v t j = 150 c rg = 10 e off v ce , collector ? emitter voltage (v) 575 525 475 325 275 switching time (ns) 625 675 725 775 1000 375 425 figure 16. switching time vs. v ce i c = 20 a v ge = 15 v t j = 150 c rg = 10 t d(off) t f figure 17. safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.01 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c 1000 100 10 100 10
NGTB20N120IHRWG http://onsemi.com 6 typical characteristics 140 0.01 frequency (khz) ipk (a) 0.1 1 10 100 1000 120 100 80 60 40 20 0 figure 19. collector current vs. switching frequency t c = 110 c t c = 80 c v ce = 600 v, t j 175 c, r gate = 10 , v ge = 0/15 v, t case = 80 c or 110 c (as noted), d = 0.5 1500 ? 40 t j , junction temperature ( c) v (br)ces (v) figure 20. typical v (br)ces vs. temperature 135 110 85 60 35 10 ? 15 1450 1400 1350 1300 1250 1200 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 figure 21. igbt transient thermal impedance pulse time (sec) r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.392 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 0.000218 0.031311 0.001057 0.007527 0.004770 r i ( c/w) 0.04597 0.000101 0.009460 0.004201 0.020965 0.007965 0.040205 0.323174 0.003094 0.083449 0.037895 0.617513 0.016194 316.228 0.000100 0.405040 0.246889
NGTB20N120IHRWG http://onsemi.com 7 figure 22. test circuit for switching characteristics
NGTB20N120IHRWG http://onsemi.com 8 figure 23. definition of turn on waveform
NGTB20N120IHRWG http://onsemi.com 9 figure 24. definition of turn off waveform
NGTB20N120IHRWG http://onsemi.com 10 package dimensions to ? 247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb20n120ihr/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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