advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 100v simple drive requirement r ds(on) 25m fast switching characteristic i d 44a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a 65 /w data and specifications subject to change without notice parameter storage temperature range operating junction temperature range -55 to 150 thermal data AP9998GI-HF parameter rating total power dissipation 1.92 drain-source voltage 100 gate-source voltage + 20 drain current, v gs @ 10v 3 44 drain current, v gs @ 10v 3 28 201310151 halogen-free product 1 -55 to 150 maximum thermal resistance, junction-ambient pulsed drain current 1 160 total power dissipation 31.2 g d s ap9998 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220cfm package is widely preferred for all commercial- industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =24a - - 25 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =24a - 36 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =24a - 30 48 nc q gs gate-source charge v ds =80v - 7 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - nc t d(on) turn-on delay time v ds =50v - 10 - ns t r rise time i d =24a - 40 - ns t d(off) turn-off delay time r g =1 -20- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 1450 2320 pf c oss output capacitance v ds =25v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 105 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =24a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 160 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.ensure that the channel temperature does not exceed 150 o c this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP9998GI-HF 2
AP9998GI-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =24a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 25 50 75 100 125 150 048121620 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =6.0v i d =250ua 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma
AP9998GI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 10v q gs q gd q g charge 0 400 800 1200 1600 2000 1 21 41 61 81 101 121 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =24a v ds =80v 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 20 40 60 80 100 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c operation in this area limited by r ds(on)
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