photodiode arrays specifications part number number of elements element dimensions pitch responsivity shunt 1 resistance dark current 1 @ 10v capacitance @ 0v uniformity 2 nep 3 . . (mm) (mm) (min) (a/w) (min) (m-ohm) (max) (na) (max) (pf) (typ) (%) (typ) (w/ ? hz) sd 058-51-02-395 4 0.635 x 0.648 0.673 0.5 @ 900nm 500 0.8 10 5 1.4x10 -14 sd 219-51-03-301 12 0.965 x 2.01 1.01 0.35 @ 633nm 200 2.7 40 5 2.0x10 -14 sd 294-52-04-390 16 1.00 x 1.78 1.57 0.28 @ 540nm 250 0.5 200 5 3.2x10 -14 sd 484-52-05-301 32 0.508 x 5.89 0.635 0.10 @ 365nm 0.22 @ 500nm 0.33 @ 700nm 50 n/a 500 5 5.2x10 -14 sd 543-52-07-390 76 0.280 x 6.35 0.310 0.30 @ 500nm 0.50 @ 900nm 250 0.8 200 7.5 1.0x10 -14 all specifications are per element. 1.dark current and shunt resistance vary with temperature as follows: for t>23 c, i d =1.09 d t i d23, r sh =0.9 d t r sh23 and for t<23 c, i d =i d23 /1.09 d t , r sh =r sh23 /0.9 d t , where d t is the temperature difference from 23 c, and i d23 and r sh23 are the dark current and shunt resistance at 23 c. 2.element to element responsivity uniformity is measured at the longest wavelength specified for responsivity of each part. 3.test conditions are v b =10mv and highest responsivity value listed in the table. ? ? ? ? ? ? ? ? ? arrays file:///d|/web sites/api/tmpkp44sgkvmg.htm (1 of 4) [7/16/2001 11:06:32 am]
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