sfh 4850 e7800 ir-lumineszenzdiode (850 nm) mit hoher ausgangsleistung high power infrared emitter (850 nm) lead (pb) free produc t - rohs compliant 2009-05-14 1 wesentliche merkmale ? infrarot led mit hoher ausgangsleistung ? anode galvanisch mi t dem geh?useboden verbunden ? kurze schaltzeiten ? sehr hohe strahldichte ? anwendungsklasse nach din 40 040 gqg anwendungen ? sensorik ? lichtgitter sicherheitshinweise je nach betriebsart emi ttieren diese bauteile hochkonzentrierte, nicht sichtbare infrarot- strahlung, die gef?hrlich fr das menschliche auge sein kann. produkte, die diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-normen 60825-1 und 62471 behandelt werden. typ type bestellnummer ordering code strahlst?rkegruppierung 1) ( i f = 100 ma, t p = 20 ms) radiant intensity grouping 1) i e (mw/sr) sfh 4850 e7800 q65110a2093 4 (typ. 7) 1) gemessen bei einem raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr features ? high power infrared led ? anode is electrically connected to the case ? short switching times ? very high radiance ? din humidity category in acc. with din 40 040 gqg applications ? sensor technology ? light curtains safety advices depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. products which incorporate these devices have to follow the safety precautions given in iec 60825-1 and iec 62471.
2009-05-14 2 sfh 4850 e7800 grenzwerte ( t c = 25 c) maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op , t stg ? 40 + 80 c sperrspannung reverse voltage v r 5 v vorw?rtsgleichstrom forward current i f 200 ma sto?strom, t p = 10 s, d = 0 surge current i fsm 1.5 a verlustleistung power dissipation p tot 470 mw w?rmewiderstand sperrschicht - umgebung thermal resistance junction - ambient w?rmewiderstand sperrschicht - geh?use thermal resistance junction - case r thja r thjc 450 160 k/w k/w kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 100 ma peak 860 nm centroid-wellenl?nge der strahlung centroid wavelength i f = 100 ma centroid 850 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 100 ma ? 42 nm abstrahlwinkel half angle ? 23 grad deg. aktive chipfl?che active chip area a 0.09 mm 2 abmessungen der aktiven chipfl?che dimension of the active chip area l b l w 0.3 0.3 mm2
sfh 4850 e7800 2009-05-14 3 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, bei i f = 100 ma, r l = 50 switching times, e from 10% to 90% and from 90% to 10%, i f = 100 ma, r l = 50 t r , t f 12 ns durchlassspannung forward voltage i f = 100 ma, t p = 20 ms i f = 1 a, t p = 100 s v f v f 1.5 ( < 1.8) 2.4 (< 3.0) v v sperrstrom reverse current i r not designed for reverse operation a gesamtstrahlungsfluss total radiant flux i f = 100 ma, t p = 20 ms e typ 50 mw temperaturkoeffizient von i e bzw. e , i f = 100 ma temperature coefficient of i e or e , i f = 100 ma tc i ? 0.5 %/k temperaturkoeffizient von v f , i f = 100 ma temperature coefficient of v f , i f = 100 ma tc v ? 0.7 mv/k temperaturkoeffizient von , i f = 100 ma temperature coefficient of , i f = 100 ma tc + 0.3 nm/k kennwerte ( t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit
2009-05-14 4 sfh 4850 e7800 strahlst?rke i e in achsrichtung 1) gemessen bei einem raumwinkel = 0.01 sr radiant intensity i e in axial direction at a solid angle of = 0.01 sr bezeichnung parameter symbol werte values einheit unit sfh 4850 e7800 -p sfh 4850 e7800 -q strahlst?rke radiant intensity i f = 100 ma, t p = 20 ms i e min i e max 4 8 6.3 12.5 mw/sr mw/sr strahlst?rke radiant intensity i f = 1 a, t p = 100 s i e typ 45 55 mw/sr 1) nur eine gruppe in einer verpacku ngseinheit (streuung kleiner 2:1) die messung der strahlst?rke und des halbwinkels erfolgt mit einer lochblende vor dem bauteil (durchmesser der lochblende: 1.1 mm; abstand lochblende zu geh?userckseite: 4,0 mm). dadurch wird sichergestellt, dass bei der strahlst?rkemessung nur diejenige strahlung in achsrichtung bewertet wird, die direkt von der chipoberfl?che austritt. von der bodenpl atte reflektierte strahlung (vagab undierende strahlung) wird dagegen nicht bewertet. diese reflexionen sind besonders bei abbildungen der chipoberfl?che ber zusatzoptiken st?rend (z.b. lichtschranken gro?er reichweite). in der anwendung werden im allgemeinen diese reflexionen ebenfalls durch blenden unterdrckt. durch dieses der anwendung entsprechende messverfahren ergibt sich fr die anwender eine besser verwertbare gr??e. diese loc hblendenmessung ist gekennzeichnet durch den eintrag ?e 7800?, der an die typenbezeichnung angeh?ngt ist. 1) only one group in one packing unit, (variation lower 2:1) an aperture is used in front of the component for measur ement of the radiant intensit y and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4.0 mm). this ensures that solely the radiation in axial direction emitting directly from the chip surf ace will be evaluated during measurement of the radiant intensity. radiation reflected by the bo ttom plate (stray radiation) will not be evaluated. these reflections impair the projection of the chip surface by additional optics (e.g . long-range light reflection switches). in respect of the application of the component, these reflections are gener ally suppressed by apertures as well. this measuring procedure corresponding with the application provides more useful values. this aperture measurement is denoted by ?e 7800? added to the type designation.
sfh 4850 e7800 2009-05-14 5 relative spectral emission i rel = f ( ) forward current i f = f ( v f ) single pulse, t p = 20 s 700 0 nm % ohf04135 20 40 60 80 100 950 750 800 850 i rel ohl01713 f i 10 -4 0.5 1 1.5 2 2.5 v3 10 0 a 0 f v -1 10 5 5 10 -2 -3 5 10 radiant intensity single pulse, t p = 20 s permissible pulse handling capability i f = f ( ), t a = 25 c, duty cycle d = parameter i e i e 100 ma = f ( i f ) ohl01715 10 -3 ma 10 1 0 10 5 5 10 -1 -2 5 10 e e (100 ma) i i i f 0 10 1 10 2 10 3 10 55 10 10 -2 -3 -4 -5 10 10 10 f i p t = d t 2 1 0 -1 10 t p 10 s 10 ohf02645 t t p i f 0.02 0.5 0.2 0.05 0.1 d = 0.005 0.01 1 1 10 10 2 10 3 10 4 ma max. permissible forward current i f = f ( t a ) 40 20 0 0 100 80 60 ?c ma ohf02644 50 100 150 200 250 r thjc f i t = 160 k/w = 450 k/w thja r
2009-05-14 6 sfh 4850 e7800 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). abstrahlcharakteristik radiation characteristics i rel = f ( ? ) geh?use / package 18 a3 din 41870 (to-18), bodenplatte, klares epoxy-gie?harz, anschlsse im 2.54-mm-raster (1/10?) 18 a3 din 41870 (to-18), clear epoxy resin, lead spacing 2.54-mm(1/10?) anschlussbelegung pin configuration 1 = kathode / cathode 2 = anode / anode ?4.3 (0.169) ?4.1 (0.161) chip position 3.6 (0.142) 3.0 (0.118) 2.54 (0.100) spacing gety6625 1 14.5 (0.571) 12.5 (0.492) ?0.45 (0.018) 2.7 (0.106) 0.9 (0.035) 1.1 (0.043) 0.9 (0.035) 1.1 (0.043) ?5.5 (0.217) ?5.2 (0.205) 2 ohr01457 020 40 60 80 100 120 0.4 0.6 0.8 1.0 100 90 80 70 60 50 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0 ?
sfh 4850 e7800 2009-05-14 7 l?tbedingungen soldering conditions wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semico nductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
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