2sb986 / 2sd1348 no.1245-1/4 applications ? power supplies, relay drivers, lamp drivers, electrical equipment. features ? adoption of fbet and mbit processes. ? low saturation voltage. ? large current capacity and wide aso. specifications ( ) : 2sb986 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)4 a collector current (pulse) i cp (--)6 a collector dissipation p c 1.2 w tc=25 c10w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1.0 ma emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1.0 ma dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)3a 40 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v (39)25 pf continued on next page. * : the 2sb986 / 2sd1348 are classified by 100ma h fe as follows : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en1245d 80906ea ms im / 11504tn (kt) / 92098ha (kt) / 10966ts (koto) x-6510 / 4107ki / d12mw, ts any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet 2sb986 / 2sd1348 pnp / npn epitaxial planar silicon darlington transistors 50v / 4a switching applications
2sb986 / 2sd1348 no.1245-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =(--)2a, i b =(--)100ma, pulse (--0.35)0.19 (--0.7)0.5 v base-to-emitterr saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma, pulse (--)0.94 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0a (--)6 v package dimensions unit : mm (typ) 7515-002 8.0 4.0 1.6 0.8 0.6 0.8 7.0 3.0 1.5 11.0 15.5 0.5 2.7 123 3.0 4.8 1.2 2.4 1 : emitter 2 : collector 3 : base sanyo : to-126 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --5.0 --4.0 --3.0 --2.0 --1.0 --4.5 --3.5 --2.5 --1.5 --0.5 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 i b =0ma itr08810 2sb986 pulse --10ma --5ma --20ma --50ma --100ma --200ma 5.0 4.0 3.0 2.0 1.0 4.5 3.5 2.5 1.5 0.5 0 0 0.4 0.8 1.2 1.6 2.0 i b =0ma itr08811 20ma 10ma 5ma 40ma 60ma 80ma 100ma 2sd1348 pulse
2sb986 / 2sd1348 no.1245-3/4 h fe -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv 2 5 7 3 2 5 3 100 10 1000 2 5 7 7 3 10000 23 57 7 0.01 23 5 0.1 23 5 1.0 itr08819 i c / i b =20 2sb986 2sd1348 cob -- v cb output capacitance, cob -- pf collector to base voltage, v cb -- v 100 10 1.0 10 7 5 3 2 5 3 2 27 35 100 27 35 itr08818 f=1mhz 2 3 5 2 3 5 7 100 7 1000 10 23 5 0.01 23 5 0.1 23 57 7 7 1.0 10 23 5 0.01 23 5 0.1 23 57 7 7 1.0 10 itr08816 f t -- i c gain-bandwidth product, f t -- mhz 100 10 2 7 5 3 1000 2 7 5 3 itr08817 2sb986 2sd1348 v ce =10v 2sb986 2sd1348 v ce =2v for pnp minus sign is omitted. 2sb986 2sd1348 for pnp minus sign is omitted. for pnp minus sign is omitted. for pnp minus sign is omitted. i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 0 --4 --8 --12 --16 --20 --2 --6 --10 --14 --18 --2.0 --1.6 --1.2 --0.8 --0.4 --1.8 --1.4 --1.0 --0.6 --0.2 0 itr08812 2sb986 pulse --2ma --4ma --6ma --8ma --10ma --12ma --14ma i b =0ma 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 itr08814 0 4 8 121620 2 6 10 14 18 2.0 1.6 1.2 0.8 0.4 1.8 1.4 1.0 0.6 0.2 0 itr08813 2sd1348 pulse i b =0ma 2sb986 v ce = --2v 0 0.2 0.4 0.6 0.8 1.2 1.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 itr08815 2sd1348 v ce =2v 1ma 2ma 3ma 4ma 5ma 6ma 7ma 8ma
2sb986 / 2sd1348 no.1245-4/4 ps 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 60 100 120 160 140 80 itr08822 2sb986 / 2sd1348 0 12 10 8 6 4 2 0 20 40 60 100 120 160 140 80 itr08823 2sb986 / 2sd1348 p c -- ta no heat sink ambient temperature, ta -- c collector dissipation, p c -- w p c -- tc case temperature, tc -- c collector dissipation, p c -- w 2 5 7 3 2 5 3 1.0 10 2 7 3 23 57 7 0.01 23 5 0.1 23 5 1.0 itr08820 i c / i b =20 0.1 0.01 5 7 3 1.0 5 7 3 2 10 5 7 3 2 2 1.0 0.1 10 57 2 3 257 3 100 257 3 itr08821 i c =4a i cp =6a single pulse 100ms 10ms 1ms dc operation 2sb986 / 2sd1348 (ta=25 c) v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v a s o 2sb986 / 2sd1348 for pnp minus sign is omitted. collector-to-emitter voltage, v ce -- v collector current, i c -- a for pnp minus sign is omitted. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2006. specifications and information herein are subject to change without notice.
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