pc35720nit pc35720nit absolute maximum ratings outline dimensions (unit : mm) model no. 4 3 1 2 1 2 4 3 4.4 0.2 5.3 0.3 2.6 0.2 0.1 0.1 3.6 0.3 2.54 0.25 0.4 0.1 0.5 + 0.4 ? 0.2 7.0 + 0.2 ? 0.7 anode mark epoxy resin 45? 6? internal connection diagram 0.2 0.05 1 2 3 4 a anode cathode emitter collector *1 pulse width 100 s, duty ratio = 0.001 *2 40 to 60%rh, ac for 1 minute, f = 60hz *3 for 10s parameter symbol rating unit forward current peak forward current i f i fm 10 200 ma ma ma reverse voltage input output v r v v power dissipation collector-emitter voltage p15 collector power dissipation collector current total power dissipation 150 70 50 mw mw mw p tot i c p c v ceo v emitter-collector voltage 6 v eco v iso (rms) kv 170 operating temperature t opr ? 40 to + 125 ? 30 to + 100 ?c ?c storage temperature isolation voltage t stg *2 *3 *1 soldering temperature t sol 260 3.75 ?c (t a = 25?c) 6 1. programmable controllers. 2. facsimiles. 3. telephones. features applications low input current type photocoupler 1. low input current type. (i f = 0.1ma) 2. high resistance to noise due to high common rejection voltage. (cmr:min. 10kv/ s) 3. mini-flat package. 4. isolation voltage. (v iso (rms) :3.75kv) notice in the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that may occ ur in equipment using any sharp devices shown in catalogs, data books, etc. contact sharp in order to obtain the latest device specification sheets before usin g any sharp device. internet internet address for electronic components group http://sharp-world.com/ecg/ 0.2mm or more soldering area
pc35720nit fig.1 test circuit for common mode rejection voltage electro-optical characteristics parameter symbol min. typ. max. unit forward voltage reverse current collector current isolation resistance floating capacitance response time common mode rejection voltage terminal capacitance collector dark current emitter-collector breakdown voltage collector-emitter breakdown voltage collector-emitter saturation voltage rise time fall time v f i r c t i ceo bv ceo bv eco r iso c f i c v ce (sat) t r t f cmr conditions i f = 5ma i f = 0.1ma, v ce = 5v i f = 5ma, i c = 1ma v = 0, f = 1khz v ce = 50v, i f = 0 i c =0.1ma, i f =0 i e =10 a, i f =0 dc500v 40 to 60%rh v = 0, f = 1mhz v ce = 2v, i c = 2ma, r l = 100 ? t a = 25 ? c, r l = 470 ?, v cm = 1.5kv (peak), i f = 0ma, v cc = 9v, vnp = 100mv 1.4 v v r = 4v ? ? ? ? ? ? 70 6 0.1 5 10 10 1 10 11 30 1.2 ? ? 0.5 250 ? 0.6 1.0 ? 418 ? 318 100 ? 10 ?? 10 v ? ? ? v v 0.1 0.3 ? a s s kv/ s ma pf pf na ? (t a = 25 ? c) input output transfer characteristics *4 *4 refer to fig.1. v cm v cp v np v o (dv/d t ) 1) r l v o v cc v cm (v cp nearly = dv/d t c f r l ) 1) v cp : voltage which is generated by displacement current in floating capacitance between primary and secondary side. v cm : high wave pulse r l = 470 ? v cc = 9v ? ? ? ? ? fig.2 forward current vs. ambient temperature forward current i f (ma) ambient temperature t a ( ? c) 0 10 5 ? 30 0 25 50 75 100 125 fig.3 diode power dissipation vs. ambient temperature diode power dissipation p (mw) 0 15 10 5 ? 30 0 25 50 75 100 125 ambient temperature t a ( ? c)
pc35720nit collector power dissipation p c (mw) 0 200 150 100 50 ? 30 0 25 50 75 100 125 ambient temperature t a ( ? c) total power dissipation p tot (mw) ambient temperature t a ( ? c) 0 200 150 170 100 50 ? 30 0 25 50 75 100 125 fig.4 collector power dissipation vs. ambient temperature peak forward current i fm (ma) 10 1 000 100 10 ? 2 10 ? 3 10 ? 1 2 22 5 5 55 1 2 000 200 20 500 50 pulse width 100 s t a =25 ? c duty ratio fig.6 peak forward current vs. duty ratio fig.5 total power dissipation vs. ambient temperature
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