0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2sd814,2SD814A features high collector-emitter voltage v ceo low noise voltage nv absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage 2sd814 150 v 2SD814A 185 v collector-emitter voltage 2sd814 150 v 2SD814A 185 v emitter-base voltage v ebo 5v collector current i c 50 ma peak collector current i cp 100 ma collector power dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55to+150 v cbo v ceo electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base cutoff current i cbo v cb = 100 v, i e =0 1 a collector-emitter voltage 2sd814 150 v 2SD814A 185 v emitter-base voltage v ebo i e =10a,i c =0 5 v forward current transfer ratio h fe v ce =5v,i c = 10 ma 90 330 collector-emitter saturation voltage v ce(sat) i c =30ma,i b =3ma 1 v transition frequency f t v ce =10v,i c = -10 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 2.3 pf noise voltage nv v ce =10v,i c =1ma,g v =80db rg = 100 k ? , function = flat 150 mv v ceo i c = 100 a, i b =0 h fe classification 2sd814 pq pr ps 2SD814A lq lr ls qrs 90 155 130 220 185 330 marking rank h fe sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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