re v f e ? ? ? ? ? o r m a b d g d d s s r r p j u s * l v . date: 16- j e atures drain-sou r low gate c low drain- rohs co m halogen fr e r dering i n part nu m smk04 6 arking in b solute m d rain-source g ate-source v d rain current d rain current s ingle avalan s ingle pulsed r epetitive av a r epetitive av a p ower dissip a u nction tem p s torage temp l imited only m s m 04 6 y w j ul-12 swi t r ce breakd o c harge: q g = source on - m pliant devi c e e packag e n formati o m be r 6 5is formatio n m aximu m charact e voltage v oltage (dc) * (pulsed) * che current ( avalanche e a lanche curr e a lanche ene r a tion p erature erature ran g m aximum jun c m k 6 5 ww t chin g o wn voltage = 11.2nc (t y - resistance: c e e o n markin g smk04 6 n m ratings ( e ristic ( note 2) e nergy (note 2 ) e nt (note 1) r gy (note 1) g e c tion temperat u column 1, column 3: e.g.) yw w -. yww: k s g re g : bv dss =65 y p.) r ds(on) =3 ? g 6 5 ( ( t c =25 c unl e ) u re 2: device c o production i n w date code ( y s d-t6q016- 0 g ulat o 0v (max.) package i-pak ( short lea d e ss otherwis e sym v d s v g s i d t t c i d m i a r e a i a r e a p d t j t s t o de n formation y ear, week) 0 00 o r ap p d ) e noted) bol s s s s t c =25 c c =100 c m r s r r d j t g s m a dvanc p lica t rat 6 5 3 4 2. 1 6 4 81 4 3. 4 8 1 5 -55 ~ i-pa k g d s m k0 4 ed n-ch p o t ion ing 5 0 3 0 4 5 6 4 .5 4 4 8 5 0 ~ 150 k (short l www.auk.c o 1 o 4 65i s we r mosf e unit v v a a a a mj a mj w c c l ead) o .kr o f 8 s e t
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 2.6 c/w thermal resistance, junction to ambient r th(j-a) max. 62.5 electrical characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 650 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 2 - 4 v drain-source cut-off current i dss v ds =650v, v gs =0v - - 1 ua v ds =650v, t c =125 c - - 100 ua gate leakage current i gss v ds =0v, v gs = 30v - - 100 na drain-source on-resistance r ds(on) v gs =10v, i d =2a - 2.4 3 forward transfer conductance (note 3) g fs v ds =10v, i d =2a - 4 - s input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 703 878 pf output capacitance c oss - 54.6 68.2 reverse transfer capacitance c rss - 5.6 7.0 turn-on delay time (note 3,4) t d(on) v dd =300v, i d =4a r g =25 ? - 10 - ns rise time (note 3,4) t r - 42 - turn-off delay time (note 3,4) t d(off) - 38 - fall time (note 3,4) t f - 46 - total gate charge (note 4,5) q g v ds =520v, v gs =10v i d =4a - 11.2 14 nc gate-source charge (note 3,4) q gs - 3.9 - gate-drain charge (note 3,4) q gd - 2.5 - source-drain diode ratings and characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 4 a source current (pulsed) i sm - - 16 a forward voltage v sd v gs =0v, i s =4a - - 1.4 v reverse recovery time (note 3, 4) t rr i s =4a, v gs =0v di f /dt=100a/us - 300 - ns reverse recovery charge (note 4,5) q rr - 2.2 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=9.4mh, i as =4a, v dd =50v, r g =25 , starting t j =25 c 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operati ng temperature typical characteristics SMK0465IS
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 3 of 8 electrical characteristic curves fig. 5 capacitance - v ds fi g . 3 r ds ( on ) - i d fig. 6 v gs - q g fig. 2 i d - v gs - : fi g . 1 i d - v ds fig. 4 i s - v sd SMK0465IS
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 4 of 8 electrical characteristic curves (continue) * c c fig. 8 r ds(on) - t j fi g . 9 i d - t c fi g . 7 v dss - t j fi g . 10 safe o p eratin g area SMK0465IS
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 5 of 8 fig. 11 gate charge test circuit & waveform fig. 12 resistive switching test circuit & waveform fig. 13 e as test circuit & waveform SMK0465IS
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 6 of 8 fig. 14 diode reverse recovery time test circuit & waveform SMK0465IS
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 7 of 8 package outline dimensions SMK0465IS
rev. date: 16-jul-12 ksd-t6q016-000 www.auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. SMK0465IS
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