c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2011 www. ruichips .com ru 30 20h n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 12 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 48 a t c =25 c 12 i d continuous drain current t c = 7 0 c 9.6 a t c =25 c 2.5 p d maximum power dissipation t c = 7 0 c 1.6 w r q j a thermal resistance - junction to ambient 50 c /w drain - source avalanche ratings e as a valanche energy, single pulsed 1 05 m j ? 30 v/ 12 a, r ds ( on ) = 9.5 m w (type ) @ v gs =10v r ds ( on ) = 15 m w (type) @ v gs = 4.5 v ? super high dense cell design ? reliable and rugged ? 100% avalanche tested ? lead free and green available ? power management in notebook computer, and dc - dc converters in networking systems. absolute maximum ratings sop - 8 n - channel mosfe t
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 2 www. ruichips .com ru 30 20h electrical characteristics ( t a =25 c unless otherwise noted) r u30 20h symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 30 v v ds = 30 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1.5 2 2.7 v i gss gate leakage current v gs = 2 0 v, v ds =0v 100 n a v gs = 10 v, i ds = 10 a 9.5 12 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 8 a 15 17 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . limited by t jmax , i as = 2 0 a, v dd = 48v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 2 a, v gs =0v 1 .2 v t rr reverse recovery time 20 ns q rr reverse recovery charge i sd = 12 a, dl sd /dt=100a/ m s 12 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 2 w c iss input capacitance 980 c oss output capacitance 1 60 c rss reverse transfer capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 1 20 pf t d ( on ) turn - on delay time 12 t r turn - on rise time 1 9 t d ( off ) turn - off delay time 3 4 t f turn - off fall time v dd = 15 v, r l = 30 w , i ds = 12 a, v gen = 10v, r g = 6 w 16 ns gate charge characteristics q g total gate charge 1 9 2 5 q gs gate - sourc e charge 3 q gd gate - drain charge v ds = 15 v, v gs = 10 v, i ds = 12 a 7 nc
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 3 www. ruichips .com ru 30 20h typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pul se duration ( sec)
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 4 www. ruichips .com ru 30 20h typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 5 www. ruichips .com ru 30 20h typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 6 www. ruichips .com ru 30 20h avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 7 www. ruichips .com ru 30 20h ordering and marking information ru 30 20 package (available) h : sop - 8 operating te mperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 8 www. ruichips .com ru 30 20h package information sop - 8 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200
c opyright ruichips semiconduc tor co . , ltd rev . a C mar ., 2011 9 www. ruichips .com ru 30 20h customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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