functional schematic absolute maximum ratings 1,2 features high linear gain: 33.5 db typ. high saturated output power: +32 dbm typ. high power added efficiency: 25% typ. 50 w input / output broadband matched integrated output power detector description m/a - com?s maapss00 58 is a four stage mmic power amplifier in a bolt down ceramic package, allowing easy assembly. the maapss00 58 employs a fully matched chip with internally decoupled gate and drain bias networks. the maapss00 58 is designed to operate from a constant current drain supply or a constan t voltage gate supply. by varying the bias conditions, the saturated output power performance of this device may be tailored fo r various applications. the maapss00 58 is ideally suited for use as an output stage or a driver amplifier in vsat systems. the maapss00 58 includes internal supply line bypassing in the package, minimizing the number of external components required. m/a - c om's maapss0065 is fabricated using a mature 0.5 micron mbe based gaas mesfet process. the process features full passivation for increased performance and reliability. this product is 100% rf tested to ensure compliance to performance specifications. MAAPSS0058 1.5 watt k - band vsat power amplifier 13.75 - 14.5 ghz v1a.0 MAAPSS0058 ordering information part number package MAAPSS0058 cr - 15 ceramic bolt down package m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 1 pin configuration pin no. pin name description 1 v dd drain supply 2 n/c no connect 3 rf in rf input 4 n/c no connect 5 v gg gate supply 6 v gg gate supply 7 v det output power detector 8 rf out rf output 9 n/c no connect 10 v dd drain supply flange gnd dc & rf ground parameter absolute maximum input power +13 dbm operating voltages v dd = +10 volts ; v gg = - 3 volts; v dd - v gg = 12 volts ids 1000 ma channel temperature +150 c operating temperature - 40 c to + 80 c storage temperature - 65 c to +150 c 1 . exceeding any one or a combination of these limits may cause permanent damage. 2. adequate heat sinking and grounding require d on flange base. v dd n/c rf out v det v gg v gg n/c rf in n/c v dd v dd n/c rf out v det v gg v gg n/c rf in n/c v dd
1.5 watt ku - band vsat power amplifier, 13.75 - 14.5 ghz MAAPSS0058 v1a.0 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 2 electrical specifications: v dd = 8.0 v, i ds = 750 ma, t a = 25 c parameter test conditions units min. typ. max. linear gain pin = - 20 dbm, ids = 750 ma typ. db 33.5 input vswr pin = +3 dbm, ids = 750 ma typ. 2.5:1 output vswr pin = - 20 dbm, ids = 750 ma typ. 2.5:1 output power pin = +3 dbm, ids = 750 ma typ. dbm 32.0 output power vs. frequency pin = +3 dbm, ids = 750 ma typ. db 0.3 output power vs. temperature t a = - 40 c to +85 c, pin = +3 dbm db 0.5 drain bias current pin = +3 dbm ma 750 gate bias voltage pin = +3 dbm, ids = 750 ma typ. v - 1.0 gate bias current pin = +3 dbm, ids = 750 ma typ. ma 10 thermal resistance ( q jc ) 25 o c heat sink c/w 8.0 second harmonic pin = +3 dbm, ids = 750 ma typ. dbc - 35 third harmonic pin = +3 dbm, ids = 750 ma typ. dbc - 45 detector voltage pin = +3 dbm, ids = 750 ma typ. v 2.4 3. external dc blocking capacitors required on the rf ports. 4. for optimum ip3 performance, v dd bypass capacitors should be pla ced within 0.5 inches of the v dd leads. application schematic 3,4 operating the MAAPSS0058 the maapss0065 is static sensitive. please handle with care. to operate the device, follow these step s. 1. apply - 2.0 volts to v gg . 2. ramp v dd to +8v. 3. adjust v gg to set typical drain current . 4. apply rf. 5. power down sequence in reverse. turn gate voltage off last. handling procedures please observe the following precautions to avoid damage to the MAAPSS0058: static sensitivity gallium arse nide integrated circuits are esd sensitive and can be damaged by static electricity. use proper esd precautions when handling t hese devices. rf out 8 rf in 3 1.0 f v gg 5,6 n/c 2,4,9 100 pf 100 pf v dd 1,10 1.0 f 0.01 f MAAPSS0058 v det 7
1.5 watt ku - band vsat power amplifier, 13.75 - 14.5 ghz MAAPSS0058 v1a.0 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 3 cr - 15 ceramic base plate 4x .06 x 45 chamfer 6 5 4 3 2 1 7 8 9 10 .010 sq. orientation tab 2x o .096 thru o.004 m a b c .090 max .33 .005 .002 .030 .318 .010 .328 .010 .050 min. 10x .530 .70 .159 .010 .003 10x .040 .100 4x .115 .010 .050 4x .085 - c - - b - - a -
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