i c, nom 1200 a i c 1700 a min. typ. max. - 1,7 2,15 v - 2 t.b.d. v vorl?ufige daten t vj = 25c preliminary data - - 400 5 gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c i ges gate threshold voltage v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung grenzlastintegral insulation test voltage rms, f= 50hz, t= 1min. transistor wechselrichter / transistor inverter kollektor emitter s?ttigungsspannung i c = 1200a, v ge = 15v, t vj = 25c, collector emitter satration voltage v ge(th) c ies v isol 6,5 2,5 a - v nf 86 - 11,5 - 5,8 c p tot a dc forward current +/- 20 t c = 25c; transistor i f 1200 5,6 kw v ges repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom dauergleichstrom gate emitter peak voltage v 300 k a2s kv nf - 4 h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t c = 25c dc collector current repetitive peak forward current date of publication: 2002-07-29 gate schwellenspannung i c = 48ma, v ce = v ge , t vj = 25c, eingangskapazit?t periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung v cesat charakteristische werte / characteristic values approved: sm tm; christoph lbke technische information / technical information fz1200r12ke3 igbt-module igbt-modules v ces a i crm v 2400 1200 t p = 1ms i2t value i frm 2400 i2t i c = 1200a, v ge = 15v, t vj = 125c, input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v revision: 2.0 prepared by: mod-d2; mark mnzer rckwirkungskapazit?t reverse transfer capacitance v ce = 1200v, v ge = 0v, t vj = 25c, - kollektor emitter reststrom collector emitter cut off current i ces f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - c res gateladung v ge = -15v...+15v; v ce =...v q g - gate charge ma - 5 na 1 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules min. typ. max. - 0,54 - s - 0,64 - s - 0,22 - s - 0,23 - s - 0,82 - s - 0,96 - s - 0,15 - s - 0,18 - s - 2,0 2,5 v - 1,8 - v - 390 - a - 620 - a - 55 - c - 150 - c - 13 - mj - 35 - mj 4800 - a - nh stray inductance module modulindiktivit?t l ce - 12 v ge =15v, r goff =0,62 , t vj = 125c einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls fallzeit (induktive last) fall time (inductive load) 0,19 q r ausschaltenergie pro puls reverse recovery energy e rec v r = 600v, v ge = -15v, t v j = 25c v r = 600v, v ge = -15v, t v j = 125c i f =i c , nom , -di f /dt= 4800a/s sperrverz?gerungsladung recoverred charge i f =i c , nom , -di f /dt= 4800a/s r cc/ee - kurzschlussverhalten t p 10s, v ge 15v, t vj 125c i sc - sc data v cc = 900v, v cemax = v ces - l ce di/dt turn off energy loss per pulse e off i c = 1200a, v cc = 600v, l = 60nh i c = 1200a, v cc = 600v, l = 60nh v ge =15v, r gon =1,8 , t vj = 125c i c = 1200a, v cc = 600v t d,off v ge =15v, r goff =0,62 , t vj =25c v ge =15v, r goff =0,62 ,t vj = 125c i c = 1200a, v cc = 600v v ge =15v, r goff =0,62 , t vj =25c v ge =15v, r goff =0,62 ,t vj = 125c e on m charakteristische werte / characteristic values - - t f v ge =15v, r gon =1,8 t vj =25c v ge =15v, r gon =1,8 , t vj = 125c - t d,on t r abschaltverz?gerungszeit (ind. last) turn off delay time (inductive load) v r = 600v, v ge = -15v, t v j = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm leitungswiderstand, anschluss-chip lead resistance, terminal-chip t c = 25c v r = 600v, v ge = -15v, t v j = 25c i f =i c , nom , -di f /dt= 4800a/s durchlassspannung charakteristische werte / characteristic values i f = i c, nom , v ge = 0v, t vj = 25c i f = i c, nom , v ge = 0v, t vj = 125c diode wechselrichter / diode inverter transistor wechselrichter / transistor inverter anstiegszeit (induktive last) rise time (inductive load) einschaltverz?gerungszeit (ind. last) turn on delay time (inductive load) v ge =15v, r gon =1,8 , t vj = 125c i c = 1200a, v cc = 600v v ge =15v, r gon =1,8 t vj =25c i c = 1200a, v cc = 600v v r = 600v, v ge = -15v, t v j = 25c v r = 600v, v ge = -15v, t v j = 125c 245 190 - mj - mj 2 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules min. typ. max. r thjc - - 0,022 k/w r thjc - - 0,040 k/w mm 20 32 kriechstrecke creepage distance luftstrecke clearance maximum junction temperature t vj op -40 - c 150 -- schraube /screw m5 anschlsse / terminal m4 mm m comperative tracking index anschlsse / terminal m8 cti storage temperature anzugsdrehmoment, elektr. anschlsse m this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. mechanische eigenschaften / mechanical properties nm anzugsdrehmoment, mech. befestigung mounting torque nm 8-10 mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. 125 c c t stg -40 - 125 case, see appendix terminal connection torque lagertemperatur thermische ei g enschaften / thermal p ro p erties thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. t vj max betriebstemperatur al 2 o 3 - m- 5,75 >400 4,25 1,7 g weight 2,3 nm g 1500 gewicht r thck pro modul / per module paste / grease =1w/m*k bergangs w?rmewiderstand internal insulation geh?use, siehe anlage operation temperature innere isolation pro diode/per diode, dc thermal resistance, junction to case innerer w?rmewiderstand pro transistor /per transistor, dc k/w - 0,006 - 3 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules ausgangskennlinie (typisch) i c = f(v ce ) output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15 v ausgangskennlinienfeld (typisch) i c = f(v ce ) 0 300 600 900 1200 1500 1800 2100 2400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 300 600 900 1200 1500 1800 2100 2400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules bertragungscharakteristik (typisch) transfer characteristic (typical) i c = f(v ge ) v ce = 20 v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) 0 300 600 900 1200 1500 1800 2100 2400 5678910111213 v ge [v] i c [a] tvj=25c tvj=125c 0 300 600 900 1200 1500 1800 2100 2400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules , schaltverluste (typisch) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g on =1,8 , r g of f =0,62 , v ce =600v, t v j =125c schaltverluste (typisch) switching losses (typical) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =1200a, v ce =600v, t v j =125c 0 100 200 300 400 500 600 700 800 0 300 600 900 1200 1500 1800 2100 2400 i c [a] e [mj] eon eoff erec 0 100 200 300 400 500 600 700 800 024681012141618 r g [ ] e [mj] eon eoff erec 6 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules 6,897e-01 z thjc = f (t) 3 8,49 2,997e-02 transienter w?rmewiderstand sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, t v j =125c i r i [k/kw] : igbt i [s] : igbt r i [k/kw] : diode i [s] : diode 1 2,63 transient thermal impedance 2,69 2,850e-03 11,48 4,452e-01 12,60 7,451e-02 13,23 2,647e-02 2,26 3,820e-03 2 8,62 5,634e-02 4 0,001 0,01 0,1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode ic,chip 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip 7 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
vorl?ufige daten preliminary data technische information / technical information fz1200r12ke3 igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram g e c e c e c ih4 18 0.2 61.5 0.3 m8 114 0.1 130 0.5 (f r m6-schraube) ?7 +0.1 28.25 0.5 18.25 0.5 14 0.5 8 0.3 14.75 0.5 m 4.0 tief 2.5 tief 10.35 0.2 10.65 0.2 48.8 0.2 29.5 0.5 2 +0.2 28 0.5 e (a) e (a) dd... c (k) c (k) fd... c e e c c g e external connection (to be done) c fz... g c c e e e 8 (8) db_fz1200r12ke3_2.0.xls 2002-07-29
|
