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  e u r o p e a n p o w e r - s e m i c o n d u c t o r a n d e l e c t r o n i c s c o m p a n y v w k f e b r . 1 9 9 7 m a r k e t i n g i n f o r m a t i o n d 3 3 0 1 n d 3 4 0 1 n 7 5 1 2 0 - 0 , 3
d 3301 n 32...40 t *) d 3401 n 32...40.t elektrische eigenschaften electrical properties h?chstzul?ssige werte maximum rated values periodische spitzensperrspannung repetitive peak reverse voltage t vj = -40c... t vj max v rrm 3200 3600 4000 v sto?spitzensperrspannung non-repetitive peak reverse voltage t vj = +5c... t vj max v rsm 3300 3700 4100 v durchla?strom-grenzeffektivwert rms forward current i frmsm 7200 a dauergrenzstrom mean forward current t c = 100 c, f=50hz i favm 3400 a t c = 60 c, f=50hz i favm 4400 a sto?strom-grenzwert surge forward current t vj = 25c, t p = 10 ms i fsm 60,0 ka t vj = t vj max , t p = 10 ms i fsm 47,5 ka grenzlastintegral i 2 t-value t vj = 25c, t p = 10 ms i 2 t 18,0 . 10 6 a 2 s t vj = t vj max , t p = 10 ms i 2 t 11,2 . 10 6 a 2 s charakteristische werte characteristic values durchla?spannung forward voltage t vj = t vj max , i f = 4000 a v f max. 1,27 v typ. max. schleusenspannung threshold voltage t vj = t vj max v t(to) 0,69 0,76 v ersatzwiderstand forward slope resistance t vj = t vj max r t 0,127 0,128 m w sperrstrom reverse current t vj = t vj max , v r = v rrm i r max. 200 ma rckstromspitze peak reverse recovery current t vj =t vj max , i fm =1500a, -di/dt=5a/s, v r =0,5v rrm , c=4,7f, r=8,2 w i rm 200 kv sperrverz?gerungsladung recovered charge t vj =t vj max , i fm =1500a, -di/dt=5a/s, v r =0,5v rrm , c=4,7f, r=8,2 w q r max. 7,2 mas thermische eigenschaften thermal properties innerer w?rmewiderstand thermal resistance, junction beidseitig/two-sided, q =180 sin r thjc 0,01065 c/w to case beidseitig/two-sided, dc 0,01 c/w bergangs-w?rmewiderstand thermal resistance, case to heatsink beidseitig/two-sided r thck 0,0025 c/w h?chstzul.sperrschichttemperatur max. junction temperature t vj max 160 c betriebstemperatur operating temperature t c op -40...+160 c lagertemperatur storage temperature t stg -40...+160 c mechanische eigenschaften mechanical properties geh?use, siehe seite case, see page 1 si-element mit druckkontakt si-pellet with pressure contact silizium tablette/silicon wafer 75dn40 anpre?kraft clamping force d3301 n f 45...65 kn d3401n 36...52 kn gewicht weight g typ. 1700 g kriechstrecke creepage distance 40 mm luftstrecke air distance 30 mm feuchteklasse humidity classification din 40040 c schwingfestigkeit vibration resistance f = 50 hz 50 m/s2 *) fr anwendungen ohne thermische lastwechsel z.b. elektrolyse / applications without thermal load cycles for instance electrolyses mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes.
d 3 3 0 1 n / d 3 4 0 1 n d 3 3 0 1 n / d 3 4 0 1 n / 2 2 3 4 5 7 z ( t h ) j c z ( t h ) p [ c / w ] t [ s ] 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 2 3 4 5 7 2 3 4 5 7 2 3 4 5 7 2 0 , 0 1 5 0 , 0 1 0 0 , 0 0 5 0 1 8 0 i f a y


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