1 transistor 2SD1512 silicon npn epitaxial planer type for low-frequency amplification n features l allowing supply with the radial taping. l high foward current transfer ratio h fe . n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector eiaj:scC72 3:base new s type package 4.0 0.2 marking 2.54 0.15 1.27 1.27 3.0 0.2 15.6 0.5 2.0 0.2 0.7 0.1 0.45 0.1 123 +0.2 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 100 100 15 50 20 300 150 C55 ~ +150 unit v v v ma ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency noise voltage symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) f t nv conditions v cb = 100v, i e = 0 v ce = 60v, i b = 0 i c = 10 m a, i e = 0 i c = 1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 2ma i c = 10ma, i b = 1ma v cb = 10v, i e = C2ma, f = 200mhz v ce = 10v, i c = 1ma, g v = 80db r g = 100k w , function = flat min 100 100 15 400 typ 0.05 200 80 max 0.1 1.0 1200 0.2 unit m a m a v v v v mhz mv * h fe rank classification rank r s h fe 400 ~ 800 600 ~ 1200
2 transistor 2SD1512 p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb nv i c 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 120 100 80 60 40 20 ta=25?c i b =100 m a 80 m a 40 m a 30 m a 20 m a 10 m a 60 m a 50 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 02.0 1.6 0.4 1.2 0.8 0 60 50 40 30 20 10 v ce =10v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 2000 1600 1200 800 400 v ce =10v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0 320 240 80 200 280 160 40 120 ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 10 8 6 4 2 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.01 0.03 0.1 0.3 1 0 100 80 60 40 20 v ce =10v g v =80db function=flat 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv )
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