CYT3019D surface mount dual, isolated npn silicon transistors description: the central semiconductor CYT3019D type consists of two (2) isolated npn silicon transistors packaged in an epoxy molded sot-228 surface mount case. this supermini? device is manufactured by the epitaxial planar process. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 140 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 7.0 v continuous collector current i c 1.0 a peak collector current i cm 1.5 a power dissipation p d 2.0 w operating and storage junction temperature t j, t stg -65 to +150 c thermal resistance ja 62.5 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =90v 10 na i ebo v eb =5.0v 10 na bv cbo i c =100a 140 v bv ceo i c =30ma 80 v bv ebo i e =100a 7.0 v v ce(sat) i c =150ma, i b =15ma 0.20 v v ce(sat) i c =500ma, i b =50ma 0.50 v v be(sat) i c =150ma, i b =15ma 1.10 v h fe v ce =10v, i c =0.1ma 50 h fe v ce =10v, i c =10ma 90 h fe v ce =10v, i c =150ma 100 300 h fe v ce =10v, i c =500ma 50 h fe v ce =10v, i c =1.0a 15 f t v ce =10v, i c =50ma, f=20mhz 100 400 mhz c ob v cb =10v, i e =0, f=1.0mhz 12 pf c ib v eb =0.5v, i c =0, f=1.0mhz 60 pf nf v ce =10v, i c =100a, r s =1.0k, f=1.0khz 4.0 db sot-228 case r2 (9-november 2010) www.centralsemi.com
CYT3019D surface mount dual, isolated npn silicon transistors sot-228 case - mechanical outline pin configuration lead code: 1) collector q1 5) emitter q2 2) collector q1 6) base q2 3) collector q2 7) emitter q1 4) collector q2 8) base q1 marking: full part number www.centralsemi.com r2 (9-november 2010)
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