? 2009 ixys corporation, all rights reserved ds100222(12/09) high voltage power mosfet n-channel enhancement mode (electrically isolated tab) ixtf1n250 v dss = 2500v i d25 = 1a r ds(on) 40 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 2500 v v dgr t j = 25 c to 150 c, r gs = 1m ? 2500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 1 a i dm t c = 25 c, pulse width limited by t jm 6a p d t c = 25 c 110 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting force 20..120 / 4.5..27 nm/lb.in. v isol 50/60hz, 1min 2500 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 2500 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 0.8 ? v dss , v gs = 0v 25 a note 2, t j = 125 c 25 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 40 ? 1 = gate 5 = drain 2 = source isoplus i4-pak tm isolated tab 1 5 2 features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 2500v electrical isolation z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge z pulse circuits advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixtf1n250 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 0.5 ? i d25 , note 1 1.0 1.8 ms c iss 1660 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 77 pf c rss 23 pf t d(on) 69 ns t r 25 ns t d(off) 132 ns t f 39 ns q g(on) 41 nc q gs v gs = 10v, v ds = 600v, i d = 0.5 ? i d25 8 nc q gd 16 nc r thjc 1.13 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 1.5 a i sm repetitive, pulse width limited by t jm 6 a v sd i f = 1a, v gs = 0v, note 1 1.5 v t rr i f = 1a, -di/dt = 100a/s, v r = 200v 2.5 s resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = i d25 r g = 5 ? (external) isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = source pin 3 = drain tab 4 = isolated advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. notes 1. pulse test, t 300 s, duty cycle, d 2%. 2. device must be heatsunk for high-temp i dss measurement to avoid thermal runaway.
? 2009 ixys corporation, all rights reserved ixtf1n250 fig. 1. output characteristics @ t j = @ 25oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 40 45 v ds - volts i d - amperes v gs = 10v 4v 5v fig. 2. output characteristics @ t j = 125oc 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 5 10 15 20 25 30 35 40 45 v ds - volts i d - amperes v gs = 10v 5v 4v fig. 4. r ds(on) normalized to i d = 0.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 1a i d = 0.5a fig. 3. r ds(on) normalized to i d = 0.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 5. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixtf1n250 ixys ref: t_1n250 (5p)12-17-09-b fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance yufgfuy 3.00 fig. 7. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 600v i d = 500ma i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss
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