? 2013 ixys corporation, all rights reserved ds100501b(04/13) high voltage power mosfet (electrically isolated tab) n-channel enhancement mode features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 4500v~ electrical isolation z molding epoxies meet ul 94 v-0 flammability classification advantages z high voltage package z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge applications z pulse circuits z laser and x-ray generation systems IXTF1N450 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 4500 v v dgr t j = 25 c to 150 c, r gs = 1m 4500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 0.9 a i dm t c = 25 c, pulse width limited by t jm 3.0 a p d t c = 25 c 165 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v isol 50/60hz , 1 minute 4500 v~ weight 6 g v dss = 4500v i d25 = 0.9a r ds(on) 95 1 = gate 5 = drain 2 = source isoplus i4-pak tm isolated tab 1 5 2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v gs(th) v ds = v gs , i d = 250 a 3.5 6.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 3.6kv, v gs = 0v 10 a v ds = 4.5kv 50 a v ds = 3.6kv note 2, t j = 100 c 25 a r ds(on) v gs = 10v, i d = 50ma, note 1 95 preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTF1N450 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp i dss measurement. isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = soure pin 3 = drain pin 4 = isolated symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 200ma, note 1 0.28 0.46 s c iss 1730 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 78 pf c rss 28 pf r gi gate input resistance 21 t d(on) 34 ns t r 60 ns t d(off) 58 ns t f 127 ns q g(on) 40 nc q gs v gs = 10v, v ds = 1kv, i d = 0.5a 10 nc q gd 20 nc r thjc 0.77 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 1 a i sm repetitive, pulse width limited by t jm 5 a v sd i f = 1a, v gs = 0v, note 1 2.0 v t rr i f = 1a, -di/dt = 50a/ s, v r = 100v 1.75 s resistive switching times v gs = 10v, v ds = 500v, i d = 0.5a r g = 10 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXTF1N450 fig. 2. extended output characteristics @ t j = 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 v ds - volts i d - amperes v gs = 10 v 8 v 6 v 7 v 6.5 v fig. 3. output characteristics @ t j = 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20406080100120140160 v ds - volts i d - amperes v gs = 10 v 7 v 6 v 5 v fig. 4. r ds(on) normalized to i d = 0.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10 v i d = 0.5 a i d = 1 a fig. 5. r ds(on) normalized to i d = 0.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 i d - amperes r ds(on) - normalized v gs = 10 v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 -50-250 255075100125150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1020304050607080 v ds - volts i d - amperes v gs = 10 v 9 v 7 v 6 v 8 v
ixys reserves the right to change limits, test conditions, and dimensions. IXTF1N450 fig. 7. input admittance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 1000v i d = 500ma i g = 1ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.10 1.00 10.00 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms 25s
? 2013 ixys corporation, all rights reserved ixys ref: t_1n450(h7)10-09-12 IXTF1N450 fig. 13. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w
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