high voltage transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 300 vdc collectorbase voltage v cbo 300 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b =0) v (br)ceo 300 e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 300 e vdc emitterbase breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 6.0 e vdc collector cutoff current (v cb = 200 vdc, i e = 0) i cbo e 0.1 m adc emitter cutoff current (v eb = 6.0 vdc, i c = 0) i ebo e 0.1 m adc 1. pulse test: pulse width
300 s; duty cycle
2.0%. on semiconductor ? semiconductor components industries, llc, 2001 february, 2001 rev. 1 340 publication order number: bf393/d bf393 case 2904, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
bf393 http://onsemi.com 341 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) h fe 25 40 e e e collectoremitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) e 2.0 vdc baseemitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v be(sat) e 2.0 vdc smallsignal characteristics currentgain e bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 50 e mhz common emitter feedback capacitance (v cb = 60 vdc, i e = 0, f = 1.0 mhz) c re e 2.0 pf
bf393 http://onsemi.com 342 figure 1. dc current gain i c , collector current (ma) 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 c, capacitance (pf) figure 2. capacitances v r , reverse voltage (volts) 0.2 100 50 20 1.0 c cb 10 2.0 5.0 0.5 1.0 2.0 5.0 10 20 50 100 200 c eb figure 3. currentgain e bandwidth product i c , collector current (ma) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 100 70 50 30 20 10 t j = 25 c v ce = 20 v f = 20 mhz f, current-gain bandwidth product (mhz) t 1.0 i c , collector current (ma) figure 4. aono voltages v, voltage (volts) 1.4 0 t j = 25 c v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v be(sat) @ i c /i b = 10 1.2 1.0 0.8 0.6 0.4 0.2 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 v ce , collector-emitter voltage (volts) i c , collector current (ma) mpsa43 figure 5. maximum forward bias safe operating area current limit thermal limit (pulse curves @ t c = 25 c) second breakdown limit mpsa42 100 m s 1.0 ms t c = 25 c t a = 25 c curves apply below rated v ceo 500 0.5 1.0 2.0 5.0 10 20 50 100 200 100 50 20 10 5.0 2.0 1.0 0.5 200 500 10 m s 100 ms
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