si4558dy vishay siliconix document number: 70633 s-56944erev. e, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 n- and p-channel 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) n - channel 30 0.040 @ v gs = 10 v 6 n - channel 30 0.060 @ v gs = 4.5 v 4.8 p - channel 30 0.040 @ v gs = 10 v 6 p - channel 30 0.070 @ v gs = 4.5 v 4.4 s 1 d g 1 d s 2 d g 2 d so-8 5 6 7 8 top view 2 3 4 1 s 2 g 2 g 1 s 1 d
parameter symbol n-channel p-channel unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 6 6 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.7 4.7 a pulsed drain current i dm 30 30 a continuous source current (diode conduction) a i s 2 2 maximum power dissipation a t a = 25 c p d 2.4 w maximum power dissipation a t a = 70 c p d 1.5 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol n- or p- channel unit maximum junction-to-ambient a r thja 52 c/w notes a. surface mounted on fr4 board, t 10 sec.
si4558dy vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70633 s-56944erev. e, 23-nov-98
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