MP4301 2004-07-01 1 toshiba power transistor module silicon npn epitaxial type (four darlington power transistor in one) MP4301 high power switching applications hammer drive, pulse motor drive and inductive load switching ? small package by full molding (sip 12 pin) ? high collector power dissipation (4 devices operation) : p t = 4.4 w (ta = 25c) ? high collector current: i c (dc) = 3 a (max) ? high dc current gain: h fe = 2000 (min) (v ce = 2 v, i c = 1.5 a) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6 v dc i c 3 collector current pulse i cp 6 a continuous base current i b 0.5 a collector power dissipation (1-device operation) p c 2.2 w collector power dissipation (4-device operation) p t 4.4 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c array configuration unit: mm jedec D jeita D toshiba 2-32c1b weight: 3.9 g (typ.) 1 r1 r2 7 r1 4.5 k ? r2 300 ? 6 12 8 5 2 3 10 49 11
MP4301 2004-07-01 2 marking thermal characteristics characteristics symbol max unit thermal resistance from junction to ambient (4-device operation, ta = 25c) r th (j-a) 28.4 c/w maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) t l 260 c electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 120 v, i e = 0 a D D 10 a collector cut-off current i ceo v ce = 100 v, i b = 0 a D D 10 a emitter cut-off current i ebo v eb = 6 v, i c = 0 a 0.5 D 2.5 ma collector-base breakdown voltage v (br) cbo i c = 1 ma, i e = 0 a 120 D D v collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 a 100 D D v h fe (1) v ce = 2 v, i c = 1.5 a 2000 D 15000 dc current gain h fe (2) v ce = 2 v, i c = 3 a 1000 D D D collector-emitter v ce (sat) i c = 1.5 a, i b = 3 ma D D 1.5 saturation voltage base-emitter v be (sat) i c = 1.5 a, i b = 3 ma D D 2.0 v transition frequency f t v ce = 2 v, i c = 0.5 a D 60 D mhz collector output capacitance c ob v cb = 10 v, i e = 0 a, f = 1 mhz D 30 D pf turn-on time t on D 0.3 D storage time t stg D 2.0 D switching time fall time t f i b1 = ? i b2 = 3 ma, duty cycle 1% D 0.4 D s i b1 20 s v cc = 30 v output 20 ? i b2 i b1 input i b2 MP4301 japan lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
MP4301 2004-07-01 3 emitter-collector diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit maximum forward current i fm D D D 3 a surge current i fsm t = 1 s, 1 shot D D 6 a forward voltage v f i f = 1 a, i b = 0 a D 1.2 1.8 v forward voltage t rr D 1.0 D s reverse recovery charge q rr i f = 3 a, v be = ? 3 v, di f /dt = ? 50 a/s D 5 D c flyback-diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit maximum forward current i fm D D D 3 a reverse current i r v r = 120 v D D 0.4 a reverse voltage v r i r = 100 a 120 D D v forward voltage v f i f = 0.5 a D D 1.8 v
MP4301 2004-07-01 4 collector current i c (a) h fe ? i c dc current gain h fe collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) base current i b (ma) v ce ? i b collector-emitter voltage v ce (v) ) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) common emitter ta = 2 5 c 2 0 0.5 i b = 0.15 ma 0.2 0.3 3 0 1 2 3 4 5 6 7 1 0 6 5 4 3 1 10 300 0.05 0.1 0.3 0.5 1 3 5 10 500 1000 3000 5000 10000 20000 common emitter v ce = 2 v 25 ta = 100c ? 55 0.3 0.5 1 3 5 10 0.1 10 0.3 0.5 1 3 5 common emitter i c /i b = 500 25 ta = ? 55c 100 common emitter v ce = 2 v 0 0 2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 6 5 4 3 25 ta = 100c ? 55 0 0.1 0.3 1 10 30 100 3 300 2.4 0.4 1.6 2.0 0.8 1.2 common emitter ta = 2 5 c 0.5 1 2 3 4 5 i c = 6 a 0.1 500 0.3 0.5 1 3 5 10 0.1 10 0.3 0.5 1 3 5 common emitter i c /i b = 500 25 ta = ? 55c 100
MP4301 2004-07-01 5 collector-emitter voltage v ce (v) safe operating area collector current i c (a) ambient temperature ta (c) p t ? ta total power dissipation p t (w) total power dissipation p t (w) ? t j ? p t junction temperature increase ? t j (c) r th ? t w pulse width t w (s) transient thermal resistance r th (c/w) 0.001 0.01 0.1 1 10 100 1000 0.3 -no heat sink/attached on a circuit board- (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation circuit board curves should be applied in thermal limited area. (single nonrepetitive pulse) the figure shows thermal resistance per device versus pulse width. (4) (2) (1) 1 3 10 30 100 300 (3) *: single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. 0.01 1 3 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 3 5 10 20 i c max (pulsed)* 10 ms* 1 ms* 100 s* v ceo max 0 0 attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation circuit board 2 4 6 8 10 40 80 120 160 200 (4) (2) (1) (3) 0 0 circuit board a ttached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 40 80 120 160 200 1 2 3 4 5 (4) (2) (1) (3)
MP4301 2004-07-01 6 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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