1 www.irf.com junction size : square 343 mils wafer size : 4" v rrm / v drm class : 1200 v passivation process : glassivated mesa reference ir packaged part : n.a. phase control thyristors IR343SG12H major ratings and characteristics parameters units test conditions v tm typical on-state voltage 1.2 v t j = 25c, i t = 25 a v rrm / v drm direct and reverse breakdown voltage 1200 v t j = 25c, i drm /i rrm = 100 a (1) i gt required dc gate current to trigger 5 to 100 ma t j = 25 c, anode supply = 6 v, resistive load v gt max. required dc gate voltage to trigger 2 v t j = 25 c, anode supply = 6 v, resistive load i h holding current range 5 to 200 ma anode supply = 6 v, resistive load i l maximum latching current 400 ma anode supply = 6 v, resistive load mechanical characteristics nominal back metal composition, thickness cr - ni - ag (1 ka - 4 ka - 6 ka) nominal front metal composition, thickness cr - ni - ag (1 ka - 4 ka - 6 ka) chip dimensions 340 x 340 mils (see drawing) wafer diameter 100 mm, with std. <110> flat wafer thickness 330 m 10 m maximum width of sawing line 130 m reject ink dot size 0.25 mm diameter minimum ink dot location see drawing recommended storage environment storage in original container, in dessicated nitrogen, with no contamination bulletin i0108j 03/01 (1) nitrogen flow on die edge.
2 www.irf.com IR343SG12H outline table top view n 76 basic cells wafer layout all dimensions are in millimiters bulletin i0108j 03/01 all dimensions are in millimeters
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