solid state control devices 22 maximum ratings symbol vdrm device numbers units repetitive peak off-state voltage (1) gate open, and tj = 110 c vdrm 200 400 600 HSC160B hsc160d hsc160m hsc165b hsc165d hsc165m volt rms on-state current at tc = 80 c and conduction angle of 360 it(rms) 25.0 40.0 amp peak surge (non-repetitive) on-state current, one-cycle, at 50hz or 60 hz itsm 250 400 amp peak gate-trigger current for 3sec. max. igtm 4 4 amp peak gate-power dissipation at igt < igtm pgm 40 40 watt average gate-power dissipation pg(av) 0.8 0.8 watt storage temperature range tstg -40 to +150 c operating temperature range, tj toper -40 to +110 c electrical characteristics at specified case temperatures peak off-state current, (1) gate open tc = 110 c vdrm = max. rating idrm 1 2 ma max. maximum on-state voltage, (1) at tc=25c and it = rated amps vtm 1.8 2 volt max dc holding current, (1) gate open and tc = 25c iho 80 100 ma max. critical rate-of-rise of off-state voltage, (1) for vd = vdrm gate open, tc - 110c critical dv/dt 200 200 v/sec. critical rate-of-rise of communication voltage, (1) at tc = 80 c, gate unenergized, vd = vdrm, it = it (rms) commutating dv/dt 5 5 v/sec. dc gate - trigger current for vd = 12vdc, rl = 60 ohm and at tc = 25 c (t2 + gate + t2 - gate-) quads 1 & 3 (t2 + gate - t2 - gate +) quads 2 & 4 igt 100 i, iii 150 ii, iv 100 i, iii 150 ii, iv ma max. dc gate-trigger voltage for vd = 12vdc, rl = 30 ohm and at tc = 25c vgt 2.5 2.5 volt max gate-controlled turn-on time for vd=vdrm, igt = 200ma tr =0.1 sec., it = 10a (peak) and tc = 25c tgt 3 3 sec. thermal resistance, junction-to-case r q j-c 1.3 1.3 c/watt typ notes: (1) all values apply in either direction. (2) all hutson isolated to-239 triacs are ul recognized. ul number e95589(n).
solid state control devices 23 terminal designation product terminal 1 terminal2 terminal3 triac mt1 mt2 gate- trigger terminal specifications terminal accepts fast-on connector width thickness 1 & 2 0.250 ser. n p 3 0.187 ser. q r sym. inches metric (mm) a 1.182 1.192 30.02 39.8 b 0.150 0.161 3.81 4.09 c 0.975 1.025 24.76 26.04 d 0.175 ref. 4.46 ref. e* 0.480 0.5 12.19 12.7 f 0.050 ref. 1.27 ref. g 1.507 1.567 38.27 39.8 h 0.119 0.131 3.02 3.33 j - 0.4 - 10.16 k 0.900 0.96 22.86 24.36 l 0.070 ref. 1.77 ref. m 0.778 0.81 19.76 20.57 n 0.247 2.53 6.27 6.43 p 0.031 0.033 0.78 0.84 q 0.184 0.19 4.67 4.83 r 0.031 0.033 0.78 0.84
solid state control devices 24 current waveform: sinusoidialm, 60hz resistive load i t(rms) = rated amps at 80c gate control may be lost during and after surge. gate control will be regained after tj returns to steady-state value. 1. mt 1 2. mt 2 3. gate
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