bym36a, bym36b, bym36c, bym36d, bym36e www.vishay.com vishay semiconductors rev. 1.8, 03-sep-12 1 document number: 86012 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast avalanche sinterglass diode mechanical data case: sod-64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg features ? glass passivated ? hermetically sealed package ? very low switching losses ? low reverse current ? high reverse voltage ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications ? switched mode power supplies ? high-frequency inverter circuits ? ? ? 949588 ordering information (example) device name ordering code taped units minimum order quantity bym36e bym36e-tr 2500 per 10" tape and reel 12 500 bym36e BYM36E-TAP 2500 per ammopack 12 500 parts table part type differentiation package bym36a v r = 200 v; i f(av) = 3 a sod-64 bym36b v r = 400 v; i f(av) = 3 a sod-64 bym36c v r = 600 v; i f(av) = 3 a sod-64 bym36d v r = 800 v; i f(av) = 2.9 a sod-64 bym36e v r = 1000 v; i f(av) = 2.9 a sod-64 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage ? = repetitive peak reverse voltage see electrical characteristics bym36a v r = v rrm 200 v bym36b v r = v rrm 400 v bym36c v r = v rrm 600 v bym36d v r = v rrm 800 v bym36e v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 65 a average forward current bym36a i f(av) 3a bym36b i f(av) 3a bym36c i f(av) 3a bym36d i f(av) 2.9 a bym36e i f(av) 2.9 a non repetitive reverse avalanche energy i (br)r = 1 a, inductive load e r 20 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w
bym36a, bym36b, bym36c, bym36d, bym36e www.vishay.com vishay semiconductors rev. 1.8, 03-sep-12 2 document number: 86012 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - max. reverse power dissipation vs. junction temperatur e fig. 2 - max. average forward current vs. ambient temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 3 a bym36a v f --1.6v bym36b v f --1.6v bym36c v f --1.6v bym36d v f - - 1.78 v bym36e v f - - 1.78 v i f = 3 a, t j = 175 c bym36a v f - - 1.22 v bym36b v f - - 1.22 v bym36c v f - - 1.22 v bym36d v f - - 1.28 v bym36e v f - - 1.28 v reverse current v r = v rrm i r --5a v r = v rrm , t j = 150 c i r - - 100 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a bym36a t rr - - 100 ns bym36b t rr - - 100 ns bym36c t rr - - 100 ns bym36d t rr - - 150 ns bym36e t rr - - 150 ns reverse breakdown voltage i r = 100 a bym36a v (br)r 300 - - v bym36b v (br)r 500 - - v bym36c v (br)r 700 - - v bym36d v (br)r 900 - - v bym36e v (br)r 1100 - - v 0 100 500 200 300 400 600 0 40 80 120 160 200 t j - junction temperature (c) 959705 p r - max. rever s e power di ss ipation (mw) r thja = 25 k/w 1000 v 800 v 600 v 400 v 200 v r thja = 70 k/w 959706 i fav - average forward current (a) 0 40 80 120 160 200 t amb - ambient temperature (c) 4 3 2 1 0 v r = v rrm half s inewave r thja = 70 k/w r thja = 25 k/w bym36a, bym36b, bym36c
bym36a, bym36b, bym36c, bym36d, bym36e www.vishay.com vishay semiconductors rev. 1.8, 03-sep-12 3 document number: 86012 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature fig. 6 - max. forward current vs. forward voltage fig. 7 - diode capacitance vs. reverse voltage fig. 5 - max. forward current vs. forward voltage 959707 i fav - average forward current (a) 0 40 80 120 160 200 t amb - ambient temperature (c) 4 3 2 1 0 v r = v rrm half s inewave r thja = 70 k/w r thja = 25 k/w bym36d, bym36e 0.1 1 10 100 1000 0 40 80 120 160 200 t j - junction temperature (c) 959704 i r - rever s e current (a) v r = v rrm i f - forward current (a) 0.001 0.01 0.1 1 10 100 01234 v f - forward voltage (v) 959709 t j = 25 c t j = 175 c bym36d, bym36e 0 10 20 30 50 70 40 60 80 90 0.1 1 10 100 v r - rever s e voltage (v) 16302 c d - diode capacitance (pf) f = 1 mhz i f - forward current (a) 0.001 0.01 0.1 1 10 100 01234 v f - forward voltage (v) 959708 t j = 25 c t j = 175 c bym36a, bym36b, bym36c
bym36a, bym36b, bym36c, bym36d, bym36e www.vishay.com vishay semiconductors rev. 1.8, 03-sep-12 4 document number: 86012 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-64 cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4 (0.156) max. sintered glass case sod-64 26(1.014) min. 26 (1.014) min. document-no.: 6.563-5006.4-4 rev. 3 - date: 09.february.2005 94 9587
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