any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. pnp/npn epitaxial planar silicon transistors low-voltage large-current amplifier applications ordering number:enn676d 2sb808/2sd1012 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 91003tn (kt)/91098ha (kt)/1115my/1283ki, ts no.676e1/5 r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e s a b - o t - r o t c e l l o cv o b c 0 2 ) (v e g a t l o v r e t t i m e - o t - r o t c e l l o cv o e c 5 1 ) (v e g a t l o v e s a b - o t - r e t t i m ev o b e 5 ) (v t n e r r u c r o t c e l l o ci c 7 . 0 ) (a ) e s l u p ( t n e r r u c r o t c e l l o ci p c 5 . 1 ) (a n o i t a p i s s i d r o t c e l l o cp c 0 5 2w m e r u t a r e p m e t n o i t c n u jj t 5 2 1 e r u t a r e p m e t e g a r o t sg t s t 5 2 1 + o t 5 5 ( ) : 2sb808 specifications absolute maximum ratings at ta = 25?c package dimensions unit:mm 2033a [2sb808/2sd1012] ?c ?c electrical characteristics at ta = 25?c 1 : emitter 2 : collector 3 : base sanyo : spa r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t n e r r u c f f o t u c r o t c e l l o ci o b c v b c i , v 5 1 ) ( = e 0 =0 . 1 ) (a t n e r r u c f f o t u c r e t t i m ei o b e v b e i , v 4 ) ( = c 0 =0 . 1 ) (a n i a g t n e r r u c c d h e f 1v e c i , v 2 ) ( = c a m 0 5 ) ( =* 0 6 1* 0 6 9 h e f 2v e c i , v 2 ) ( = c e s l u p a m 0 0 5 ) ( =0 8 t c u d o r p h t d i w d n a b - n i a gf t v e c i , v 0 1 ) ( = c a m 0 5 ) ( =0 5 2z h m e c n a t i c a p a c t u p t u o e s a b n o m m o cc b o v b c z h m 1 = f , v 0 1 ) ( = ) 3 1 (f p 8f p 4.0 0.4 0.5 0.4 0.6 15.0 3.0 1.8 123 2.2 0.4 1.3 1.3 3.0 3.8 0.7 0.7 continued on next page.
2sb808/2sd1012 no.676e2/5 * : the 2sb808/2sd1012 are classified by 50ma h fe as follows : 2sb808 2sd1012 k n a rfg h e f 0 2 3 o t 0 6 10 6 5 o t 0 8 2 k n a rfgh h e f 0 2 3 o t 0 6 10 6 5 o t 0 8 20 6 9 o t 0 8 4 r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n o i t a r u t a s r e t t i m e - o t - r o t c e l l o c v ) t a s ( e c 1i c i , a m 5 ) ( = b a m 5 . 0 ) ( = ) 5 1 () 5 3 (v m 0 15 2v m v ) t a s ( e c 2i c i , a m 0 0 1 ) ( = b a m 0 1 ) ( = ) 0 6 () 0 2 1 (v m 0 30 8v m e g a t l o v n o i t a r u t a s r e t t i m e - o t - e s a bv ) t a s ( e b i c i , a m 0 0 1 ) ( = b a m 0 1 ) ( =8 . 0 ) (2 . 1 ) (v e g a t l o v n w o d k a e r b e s a b - o t - r o t c e l l o cv o b c ) r b ( i c i , a 0 1 ) ( = e 0 =0 2 ) (v e g a t l o v n w o d k a e r b r e t t i m e - o t - r o t c e l l o cv o e c ) r b ( i c r , a m 1 ) ( = e b = 5 1 ) (v e g a t o v n w o d k a e r b e s a b - o t - r e t t i m ev o b e ) r b ( i e i , a 0 1 ) ( = c 0 =5 ) (v continued from preceding page. -- 800 -- 700 -- 600 -- 500 -- 400 -- 300 -- 200 -- 100 0 0- -0.1 --0.2 --0.3 --0.4 --0.5 i c -- v ce i b =0 itr08383 i b -- v be 0 20 40 60 80 100 00.2 0.4 0.6 0.8 1.0 itr08385 - -1ma - -2ma - -6ma 2sb808 2sb808 2sd1012 v ce =5v (for pnp, minus sign is omitted.) - -10ma - -30ma - -50ma 800 700 600 500 400 300 200 100 0 00.1 0.2 0.3 0.4 0.5 i c -- v ce i b =0 itr08384 1ma 2ma 4ma 6ma 2sd1012 10ma 50ma c f t -- i c 100 10 1.0 2 7 5 3 1000 2 7 5 3 23 57 7 10 23 5 100 itr08386 2sb808 2sd1012 v ce =10v collector current, i c e ma collector-to-emitter voltage, v ce e v collector current, i c e ma collector-to-emitter voltage, v ce e v base current, i b e a base-to-emitter voltage, v be e v gain-bandwidth product, f t e mhz collector current, i c e ma (for pnp, minus sign is omitted.)
2sb808/2sd1012 no.676 e 3/5 2 5 5 3 2 5 3 100 10 1000 2 5 3 10000 23 5 1.0 23 5 10 23 5 100 1000 itr08389 v ce (sat) -- i c i c / i b =10 cob -- v cb 10 1.0 10 7 5 5 3 3 2 23 27 35 itr08388 f=1mhz h fe -- i c 2 3 5 2 3 5 7 100 7 1000 10 23 5 1.0 23 5 10 23 5 100 23 5 1000 itr08387 2sb808 2sd1012 v ce =2v 2sb808 2sd1012 2sb808 2sd1012 a s o 0.1 0.01 5 7 3 1.0 5 7 3 3 2 2 2 1.0 10 57 2 3 25723 3 itr08390 100ms 10ms 2sb808 / 2sd1012 dc operation i cp =1.5a i c =0.7a (for pnp, minus sign is omitted.) (for pnp, minus sign is omitted.) (for pnp, minus sign is omitted.) dc current gain, h fe collector current, i c e ma output capacitance, cob e pf collector-to-base voltage, v cb -- v collector current, i c e ma collector-to-emitter saturation voltage, v ce (sat) e mv collector-to-emitter voltage, v ce e v collector current, i c e a 0 320 280 240 200 160 120 80 40 0204060 100 120 140 80 p c -- ta itr09908 2sb808 / 2sd1012 collector dissipation, p c e mw ambient temperature, ta e? c
2sb808/2sd1012 no.676 e 4/5 main specifications c i t s i r e t c a r a h cs n o i t i d n o cz h 0 0 4 = fz h k 1 = ft i n u n o i t a p i s s i d t n e r r u c n o i t a p i s s i d t n e r r u c l a t o t , t n e c s e i u q5 . 5 1 o t 0 . 1 15 . 5 1 o t 0 . 1 1a m r e w o p t u p t u o% 0 1 = d h t5 2 1 o t 0 2 10 3 1 o t 7 2 1w m n i a g e g a l t o vp o w m 0 1 =5 . 5 4 o t 3 . 3 47 . 5 4 o t 5 . 3 4b d n o i t r o t s i d c i n o m r a h l a t o tp o w m 0 5 =6 . 2 o t 4 . 15 . 2 o t 3 . 1% e c n a t s i s e r t u p n ip o w m 0 1 =5 . 0 2 o t 4 . 0 10 . 1 2 o t 0 . 1 1k ? note : for above-mentioned h fe rank. 10 5 7 3 100 5 7 3 2 3 2 1.0 10 57 2 5 7 2 3 p o -- v in itr08391 10 1.0 5 7 3 2 100 5 7 3 2 10 100 257 3 57 323 thd -- p o itr08392 v cc =3v r l =8 ? f=1khz v cc =3v r l =8 ? f=1khz output power, p o e mw input voltage, v in e mv t otal harmonic distortion, thd e % output power, p o e mw sample application circuit : low-voltage 3v (p o 120mw) itl-otl power amplifier. circuit configuration for obtaining an output of more than 100mw, the middle-point voltage at the output stage and the collector voltage of the driver transistor must be v cc /2. therefore, the output stage is of quasi complementary configuration com- posed of npn/npn transistors. the phase is reversed by the 2sa608 and the middle-point voltage are the output stage and the collector voltage of the driver transistor are more to be v cc /2 so that the output can be maximized. itr09909 3.9k ? 100 ? ds442 2 100 ? 150 ? 1k ? 270k 22 ? 27k ? 15k ? d1 d2 r1 100 f 6.3v 10 6.3v 10 f 6.3v 220 f 6.3v tr5 tr2 tr3 input r1 : used control idele current f or r1=820 ? . use rank f for [tr4, 5(2sd1012)] f or r1=680 ? . use rank g for [tr4, 5(2sd1012)] + + + + 330p tr4 v cc =3v sp 8 ? tr1 * 2sc536e, f 2sc536e 2sa608e, f 2sd1012f, g 2
specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of september, 2003. specifications and information herein are subject to change without notice. 2sb808/2sd1012 ps no.676 e 5/5 -- 1 2 -- 1 0 -- 8 -- 2 -- 4 -- 6 0 2 4 100 77 5 3 1k 25 37 25 37 25 3 10k 100k f response itr08393 10 5 7 3 2 100 5 3 2 100 10 57 23 57 323 i cc -- p o itr08394 v cc =3v r l =8 ? 0db : 44.7db / 1khz v cc =3v r l =8 ? f=1khz 10 5 7 3 2 100 5 3 2 1.8 2.2 1.4 3.0 3.4 3.8 2.6 p o -- v cc itr08395 r l =8 ? thd=10% f=1khz current dissipation, i cc e ma output power, p o e mw output power, p o e mw supply voltage, v cc e v response e db frequency, f e hz
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