ZXTC6717MC document number: ds31926 rev. 3 - 2 1 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC dual 15v npn & 12v pnp low saturation transistor combination features npn transistor ? bv ceo > 15v ? i c = 4.5a continuous collector current ? low saturation voltage (100mv max @ 1a) ? r sat = 45m? for a low equivalent on-resistance pnp transistor ? bv ceo > -12v ? i c = -4a continuous collector current ? low saturation voltage (-140mv max @ -1a) ? r sat = 60m? for a low equivalent on-resistance ? h fe characterized up to 12a for high current gain hold up ? low profile 0.8mm high package for thin applications ? r ja efficient, 40% lower than sot26 ? 6mm 2 footprint, 50% smaller than tsop6 and sot26 ? lead-free, rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn3020b-8 ? case material: molded plasti c. ?green? molding compound. ? terminals: pre-plated nipdau leadframe. ? nominal package height: 0.8mm ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? weight: 0.013 grams (approximate) applications ? dc ? dc converters ? charging circuits ? power switches ? motor control ? led backlighting circuits ? portable applications ordering information product marking reel size (inches) tape width (mm) quantity per reel ZXTC6717MCta da1 7 8 3000 notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com. marking information da1 = product type marking code dot denotes pin 1 top view bottom view pin-out npn transistor dfn3020b-8 bottom view c 1 e 1 b 1 c 2 e 2 b2 pnp transistor c2 c2 c1 c1 e2 b2 e1 b1 c2 c1 pin 1 da1
ZXTC6717MC document number: ds31926 rev. 3 - 2 2 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC maximum ratings @t a = 25c unless otherwise specified characteristic symbol npn pnp unit collector-base voltage v cbo 40 -20 v collector-emitter voltage v ceo 15 -12 v emitter-base voltage v ebo 7 -7 v peak pulse current i cm 15 -12 a continuous collector current (notes 3 & 6) i c 4.5 -4 a (notes 4 & 6) 5 -4.45 base current i b 1 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol npn pnp unit power dissipation linear derating factor (notes 3 & 6) p d 1.5 12 w mw/ c (notes 4 & 6) 2.45 19.6 (notes 5 & 6) 1.13 8 (notes 5 & 7) 1.7 13.6 thermal resistance, junction to ambient (notes 3 & 6) r ja 83.3 c/w (notes 4 & 6) 51.0 (notes 5 & 6) 111 (notes 5 & 7) 73.5 thermal resistance, junction to lead (notes 6 & 8) r jl 17.1 operating and storage temperature range t j , t stg -55 to +150 c notes: 3. for a dual device surface mounted on 28mm x 28mm (8cm 2 ) fr4 pcb with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. t he heatsink is split in half with the exposed collector pads connected to each half. 4. same as note (3), except the device is measured at t <5 sec. 5. same as note (3), except the devic e is surface mounted on 31mm x 31mm (10cm 2 ) fr4 pcb with high coverage of single sided 1oz copper. 6. for a dual device with one active die. 7. for dual device with 2 active die running at equal power. 8. thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTC6717MC document number: ds31926 rev. 3 - 2 3 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC thermal characteristics 0.1 1 10 0.01 0.1 1 10 0 255075100125150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 100m 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 0.01 0.1 1 10 8sqcm 2oz cu one active die 100us 100ms 1s v ce(sat) limited 1ms npn safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 10sqcm 1oz cu one active die 10sqcm 1oz cu two active die 8sqcm 2oz cu one active die derating curve max power dissipation (w) temperature (c) 8sqcm 2oz cu one active die d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz cu two active die 1oz cu one active die 2oz cu once active die 2oz cu two active die thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz cu one active die 1oz cu two active die 2oz cu one active die 2oz cu two active die t amb =25c t j max =150c continuous power dissipation v board area p d dissipation (w) board cu area (sqcm) 8sqcm 2oz cu one active die 100us 1ms 10ms 100ms 1s dc single pulse, t amb =25c v ce(sat) limited pnp safe operating area -i c collector current (a) -v ce collector-emitter voltage (v)
ZXTC6717MC document number: ds31926 rev. 3 - 2 4 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC npn - electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 40 70 - v i c = 100a collector-emitter breakdown voltage (note 9) bv ceo 15 18 - v i c = 10ma emitter-base breakdown voltage bv ebo 7 8.2 - v i e = 100a collector cutoff current i cbo - - 100 na v cb = 30v emitter cutoff current i ebo - - 100 ?na v eb = 6v collector emitter cutoff current i ces - - 100 na v ce = 12v static forward current transfer ratio (note 9) h fe 200 300 200 150 - 415 450 320 240 80 - - - - - - i c = 10ma, v ce = 2v i c = 200ma, v ce = 2v i c = 3a, v ce = 2v i c = 5a, v ce = 2v i c = 12a, v ce = 2v collector-emitter saturation voltage (note 9) v ce(sat) - 8 70 165 240 200 14 100 200 310 - mv i c = 0.1a, i b = 10ma i c = 1a, i b = 10ma i c = 3a, i b = 50ma i c = 4.5a, i b = 50ma i c = 4.5a, i b = 100ma base-emitter turn-on voltage (note 9) v be ( on ) - 0.88 0.96 v i c = 4.5a, v ce = 2v base-emitter saturation voltage (note 9) v be ( sat ) - 0.94 1.05 v i c = 4.5a, i b = 50ma output capacitance c obo - 30 40 pf v cb = 10v. f = 1mhz transition frequency f t 80 120 - mhz v ce = 10v, i c = 50ma, f = 100mhz turn-on time t on - 120 - ns v cc = 10v, i c = 1a i b1 = i b2 = 10ma turn-off time t off - 160 - ns notes: 9. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC6717MC document number: ds31926 rev. 3 - 2 5 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC npn ? typical electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) v i c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC6717MC document number: ds31926 rev. 3 - 2 6 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC pnp - electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -20 -35 - v i c = -100a collector-emitter breakdown voltage (note 10) bv ceo -12 -25 - v i c = -10ma emitter-base breakdown voltage bv ebo -7 -8.5 - v i e = -100a collector cutoff current i cbo - - -100 na v cb = -16v emitter cutoff current i ebo - - -100 ?na v eb = -6v collector emitter cutoff current i ces - - -100 na v ces = -10v static forward current transfer ratio (note 10) h fe 300 300 180 60 45 475 450 275 100 70 - - - - - - i c = -10ma, v ce = -2v i c = -100ma, v ce = -2v i c = -2.5a, v ce = -2v i c = -8a, v ce = -2v i c = -10a, v ce = -2v collector-emitter saturation voltage (note 10) v ce(sat) - - - - - -10 -100 -100 -195 -240 -17 -140 -150 -300 -310 mv i c = -0.1a, i b = -10ma i c = -1a, i b = -10ma i c = -1.5a, i b = -50ma i c = -3a, i b = -50ma i c = -4a, i b = -150ma base-emitter turn-on voltage (note 10) v be ( on ) - -0.87 -0.96 v i c = -4a, v ce = -2v base-emitter saturation voltage (note 10) v be ( sat ) - -0.97 -1.07 v i c = -4a, i b = -150ma output capacitance c obo - 21 30 pf v cb = -10v. f = 1mhz transition frequency f t 100 110 - mhz v ce = -10v, i c = -50ma, f = 100mhz turn-on time t on - 70 - ns v cc = -6v, i c = -2a i b1 = i b2 = -50ma turn-off time t off - 130 - ns notes: 10. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC6717MC document number: ds31926 rev. 3 - 2 7 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC pnp ? typical electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) v i c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC6717MC document number: ds31926 rev. 3 - 2 8 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC package outline dimensions suggested pad layout dfn3020b-8 dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d2 0.82 1.02 0.92 d4 1.01 1.21 1.11 e - - 0.65 e 1.95 2.075 2.00 e2 0.43 0.63 0.53 l 0.25 0.35 0.30 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.285 g1 0.090 x 0.400 x1 1.120 y 0.730 y1 0.500 y2 0.365 b e e2 d2 l d e a z a1 a3 d4 d4 c x1 g1 x y1 y y2 g
ZXTC6717MC document number: ds31926 rev. 3 - 2 9 of 9 www.diodes.com december 2010 ? diodes incorporated a product line o f diodes incorporated ZXTC6717MC important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or ot her changes without further notice to this doc ument and any product described herein. diodes incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does diodes incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. any cu stomer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated w ebsite, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customer s shall indemnify and hold diodes incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or mo re united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to resu lt in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of di odes incorporated products in such safety- critical, life support devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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