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ntsc video signal processing lsi for vcrs overview the LA7383 combines luminance signal processing functions and color signal processing functions for ntsc vcrs on a single chip. developed as a new-generation lsi for use in vcrs which offer increasingly higher image quality, the LA7383 offers all of the functions needed in order to realize improved picture quality in a dramatically compact 36-pin package, making this device suitable for a wide range of vcrs, from popularly priced models to high-end models. features . includes all functions required for video signal processing in an ntsc vcr. . supports full hq functions. ynr on chip (standard). cnr on chip (external components can be removed for passthrough operation). detail enhancer on chip. higher white clipping level (190%). . in addition to the above, also provides the following functions for excellent image quality: edge compensation. double high-pass noise canceller ? permits wide-band noise reduction. linear phase-type image quality adjustment ? ideal image quality adjustment method, with no waveform distortion. . by adopting the 1ccd method, one comb filter (glass) has become unnecessary. has a single 1h-delay ccd and a comb y/c separation/ynr chroma crosstalk canceller function on chip. package dimensions unit : mm 3170-dip36s 0.48 1.17 1.78 32.6 0.25 10.16 8.6 1 18 36 19 0.95 3.25 3.0 3.95max sanyo : dip36s [LA7383] . automatic adjustment filter on chip. y: lpf c: 3.58 mhz bpf, 4.21 mhz bpf, lpf (rec) . no adjustment required for white and dark clipping levels. . extremely few peripheral components (about 60 components, excluding peripheral components for the ccd). . fsc output can be used as clock for osd ic. crystal oscillator for the on-screen display circuit is not required. . dcc circuit on chip. suppresses flicker at top of screen and reduces am noise. . high-speed afc circuit. prevents color alteration and loss at top of screen when dubbing. . head switching noise reduction circuit on chip. . smallest package in the industry. . few components needed. ordering number: en 4032 monolithic linear ic LA7383 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 61595ha(ii) no.4032-1/13
maximum ratings atta=25 c parameter symbol conditions ratings unit maximum supply voltage v cc max 7.0 v allowable power dissipation pdmax ta % 65 c 1070 mw operating temperature topr 10 to +65 c storage temperature tstg 40 to +150 c operating conditions atta=25 c parameter symbol conditions ratings unit recommended supply voltage v cc 5.0 v operating supply voltage range v cc op 4.8 to 5.2 v operating characteristics atta=25 c, v cc =5v parameter symbol conditions min typ max unit [rec mode y] current consumption rec iccr when v cc = 5 v (when there is no signal), measure sum of incoming currents at pins 29 and 24 95 120 145 ma agc adjustment cagc v in = 1.0 vp-p video signal, use vr33 to adjust t3 output to 0.5 vp-p vca control characteristics 1 vca 1 measure t3 output level when s9 is set to 2 0.48 0.5 0.52 vp-p vca control characteristics 2 vca 2 measure t3 output level when s9 is set to 4 0.48 0.5 0.52 vp-p agc adjustment voltage v agc measure t33 dc voltage in above state 3.2 3.4 3.6 v agc detection voltage v ad measure t32 dc voltage in same manner 1.2 1.4 1.6 v ee output level v ee measure t28a output level in same manner 0.95 1.0 1.05 vp-p agc output 1 agc 1 v in = 2.0 vp-p video signal measure t3 output level 500 520 540 mvp-p agc output 2 agc 2 v in = 0.5 vp-p video signal measure t3 output level 460 480 500 mvp-p agc output 3 agc 3 v in = 714 mvp-p lumi, 572 mvp-p sync, measure t3 sync level 135 150 165 mvp-p agc output 4 agc 4 v in = 714 mvp-p lumi, 143 mvp-p sync, measure t3 sync level 90 100 110 mvp-p sync separation output level v syr v in = 1.0 vp-p video signal, t26 output pulse peak value 4.0 4.2 4.4 vp-p sync separation output pulse width pw syr v in = 1.0 vp-p video signal, t26 output pulse width 4.0 4.3 4.6 s sync separation output leading edge delay time d t syr v in = 1.0 vp-p video signal, measure delay time of output sync versus input sync 0.8 1.0 1.2 s sync separation threshold level th syr gradually attenuate the input level, measure input level at point when output pulse width widens 1 s or more beyond pwsyr 18 14 db sync tip level, pedestal level, white level measurement (rec) l vor measure electric potential for each of the t28 video output sync tip, pedestal, and white peak, and assign the measured values to l syn ,l ped , and l whi , respectively pseudo v insertion level (rec) d v dr measure t28 dc voltage whe n5vis applied to t27, and assign the measured value to l vdr and calculate the difference with l syn d v dr =l syn l vdr 80 0 +80 mv pseudo h insertion level (rec) d h dr measure t28 dc voltage when 2.5 v is applied to t27, and assign the measured value to l hdr and calculate the difference with l ped d h dr =l ped l hdr 200 100 0 mv continued on next page. LA7383 no.4032-2/13
continued from preceding page. parameter symbol conditions min typ max unit white insertion level (rec) d w hr measure t28 dc voltage when 1.3 v is applied to t27, and assign the measured value to l whr and calculate the difference with lw hi d w hr =lw hi l whr 40 140 240 mv vca detection voltage vvca measure t8 dc voltage 2.80 2.95 3.10 v comb filter adjustment v in = standard multiburst signal 1 vp-p and s30 = off, adjust so that the 3.58 mhz component at t21 is at a minimum y-comb characteristics gy-comb measure the chroma level at t2 with a spectrum analyzer, v in = standard chroma noise test signal 1 vp-p and s30 = off 25 db c-comb characteristics gc-comb v in = white 50% + cw 3.0 mhz 25 db rec ynr operation ep/lp (1) vr-ynr1 measure the ynr addition level at t2 with v in = standard color bar signal 1 vp-p and s30 = off 10 12 14 mv rec ynr operation ep/lp (2) vr-ynr2 measure the ynr addition level at edit mode t2 with v in = standard color bar signal 1 vp-p and s30=off 234mv pre-ccd lpf frequency characteristics (1) g pfil1 input a standard multiburst signal (1 vp-p) and measure the 4 mhz response for 500 khz at t11 0.5 0 +0.5 db pre-ccd lpf frequency characteristics (2) g pfil2 10 mhz response for 500 khz at t11 when v in = standard multiburst signal 1 vp-p and s30=off 10 8 6 db 3mlpf frequency characteristics (1) g 3mlp1 1 mhz response for 500 khz at t2 when v in = standard multiburst signal 1 vp-p and s30 = off 0.5 0 +0.5 db 3mlpf frequency characteristics (2) g 3mlp2 2 mhz response for 500 khz at t2 when v in = standard multiburst signal 1 vp-p and s30 = off 1 0 +1 db 3mlpf frequency characteristics (3) g 3mlp3 3 mhz response for 500 khz at t2 when v in = standard multiburst signal 1 vp-p and s30 = off 10 8 6 db 3mlpf frequency characteristics (4) g 3mlp4 3.58 mhz response for 500 khz at t2 when v in = standard multiburst signal 1 vp-p and s30=off 30 db 3mlpf frequency characteristics (5) g 3mlp5 4.2 mhz response for 500 khz at t2 when v in = standard multiburst signal 1 vp-p and s30=off 15 db fm modulator output level v fm no input, use vr36 to adjust output frequency to 4 mhz, measure output level 0.8 1.0 1.2 vp-p fm modulator secondary distortion h mod ratio of 8 mhz component to 4 mhz in the above state 40 35 db fm modulator modulation sensitivity s mod measure amplitude of change in output frequency when 2.6 v dc or 3.1 v dc is applied to t3, 2 x (f3.1 f2.6) 1.6 2.0 2.4 mhz/v fm modulator linearity l mod measure output frequency when 2.85 v dc applied to t3, f2.85 l mod = f2.85 (f3.1 + f2.6)/2 f3.1 f2.6 x 100 3 0 +2 % 1/2 f h carrier shift 1 c s1 measure amplitude of change in output frequency when sw35b is from on to off and sw35a is off 6.8 7.8 9.5 khz 1/2 f h carrier shift 2 c s2 measure amplitude of change in output frequency when sw35a is on and sw35b is switch from on to off 6.8 7.8 9.5 khz emphasis gain g emp v in = 0.5 mvp-p 10 khz sine wave measure ratio of levels of input and output amplitude at t4 0.5 0 +0.5 db continued on next page. LA7383 no.4032-3/13
continued from preceding page. parameter symbol conditions min typ max unit detail enhancer characteristics (1) g enh1 v in = 158 mvp-p 2 mhz sine wave measure ratio of levels of t4 and t3, difference with g emp 1.6 1.9 2.6 db detail enhancer characteristics (2) g enh2 v in = 50 mvp-p 2 mhz sine wave measure ratio of levels of t4 and t3, difference with g emp 3.1 4.1 5.1 db detail enhancer characteristics (3) g enh3 v in = 15.8 mvp-p 2 mhz sin wave measure ratio of levels of t4 and t3, difference with g emp 5.3 6.3 7.3 db detail enhancer characteristics (4) g enh4 v in = 15.8 mvp-p 2 mhz sine wave measure output amplitude at t4 in edit mode, difference with g emp 2.9 3.9 4.9 db nonlinear emphasis characteristics (1) g nlemp1 v in = 500 mvp-p 2 mhz measure ratio of levels of t4 and t3, difference with g emp 0.5 1.4 2.3 db nonlinear emphasis characteristics (2) g nlemp2 v in = 158 mvp-p 2 mhz measure ratio of levels of t4 and t3, difference with g emp 2.6 3.8 5.2 db nonlinear emphasis characteristics (3) g nlemp3 v in = 50 mvp-p 2 mhz measure ratio of levels of t3 and t4, difference with g emp 4.9 6.4 7.9 db main linear emphasis characteristics (1) g me1 v in = 50 mvp-p 500 khz sine wave measure ratio of levels of t4 and t3, difference with g emp 4.9 5.2 5.5 db main linear emphasis characteristics (2) g me2 v in = 50 mvp-p 2 mhz measure ratio of levels of t4 and t3, difference with g emp 13.1 13.6 14.1 db detail enhancer us mode characteristics (1) g enhs1 measure the amplitude at t4 when v in = 15.8 mvp-p 2 mhz sine wave; compare level with g emp 2.9 3.9 4.9 db detail enhancer us mode characteristics (2) g enhs2 measure the amplitude at t4 when v in = 15.8 mvp-p 2 mhz sine wave in edit mode; compare level with g emp 0.7 1.7 2.7 db white clipping level l wc v in = 500 mvp-p white 100% video measure white clipping level at t4 186 193 200 % dark clipping level l dc v in = 500 mvp-p white 100% video measure dark clipping level at t4 50 45 40 % [pb mode y] current consumption pb iccp incoming currents at pins 29 and 24 when v cc = 5.0 v 125 155 185 ma dropout compensation period t doc t33a: 4 mhz, 300 mvp-p sine wave t3a: 0.5 vp-p video signal t33a: time from when input went to 0 until t28a output returned 0.6 1.0 ms fm demodulation voltage v dem4 v in = 300 mvp-p ,f=4 mhz, output voltage 0.9 1.05 1.15 v fm demodulation sensitivity s dem v in = 300 mvp-p ,f=2 mhz, v dem2 v in = 300 mvp-p ,f=6 mhz, v dem6 calculate s dem =(v dem2 v dem6 )/4 0.11 0.14 0.17 v/mhz fm demodulation linearity l dem l dem = v dem4 (v dem2 +v dem6 )/2 v dem2 v dem6 x 100 3.5 0 +3.5 % carrier leakage cl v in = 300 mvp-p ,f=4mhz ratio between 4 mhz component of t1 and s dem 40 35 db noncorrelation detection level v corr v in = 500 mvp-p video signal (ramp waveform) 22 ire pb ynr characteristics lp/ep (1) gp-ynr1 v in = 500 mvp-p noise test signal 30 db s/n difference with s6 on/off 2.5 db pb ynr characteristics lp/ep (2) gp-ynr2 v in = 500 mvp-p noise test signal 30 db s/n difference with edit on/off; pin 36 low 1.5 db continued on next page. LA7383 no.4032-4/13
continued from preceding page. parameter symbol conditions min typ max unit playback through gain g pb apply v in = 0.5 vp-p video signal to pin 3, and determine ratio between pin 28 output level and input level 4.5 6.0 7.5 db dropout detection (feedback) level l doc t33a: 4 mhz, 300 mvp-p sine wave t3a: 0.5 vp-p video signal measure input signal level when t33a signal drops momentarily and t28a output goes to 0 30 40 50 mvp-p nonlinear de-emphasis characteristics (1) gnl deem1 n in = white 50% video + sine wave f = 2 mhz, 158 mvp-p measure i/o response, and assign output level described above as 0 db 6.0 5.0 4.0 db nonlinear de-emphasis characteristics (2) g nldeem2 f = 2 mhz, 50 mvp-p 9.0 8.0 7.0 db double noise canceller characteristics (1) g wnc1 f = 2 mhz, 158 mvp-p 2.3 1.8 1.3 db double noise canceller characteristics (2) g wnc2 f = 2 mhz, 50 mvp-p 6.0 5.0 4.0 db double noise canceller characteristics (3) g wnc3 f = 2 mhz, 15.8 mvp-p 10.5 9.0 7.5 db double noise canceller characteristics (4) g wnc4 f = 3.58 mhz, 158 mvp-p 2.0 1.5 1.0 db double noise canceller characteristics (5) g wnc5 f = 3.58 mhz, 50 mvp-p 5.1 4.1 3.1 db double noise canceller characteristics (6) g wnc6 f = 3.58 mhz, 15.8 mvp-p 10.5 8.5 7.0 db pic-ctl hard response characteristics (1) g ph1 f = 1 mhz, 158 mvp-p 3.5 4.5 5.5 db pic-ctl hard response characteristics (2) g ph2 f = 2 mhz, 158 mvp-p 7 8 9 db pic-ctl soft response characteristics (1) g ps1 f = 1 mhz, 158 mvp-p 5.5 4.5 3.5 db pic-ctl soft response characteristics (2) g ps2 f = 2 mhz, 158 mvp-p 9 8 7 db pic-ctl center response characteristics g pc f = 2 mhz, 158 mvp-p 1.0 1.5 2.0 db doc loop gain y g doc t33a: 4 mhz, 300 mvp-p sine wave t3a: 0.5 vp-p video signal i/o response 5h after instant when input at t33a went to 0 1.0 0 +1.0 db sync tip level, pedestal level, white level measurement (pb) l vor with v in = white 100% 0.5 vp-p measure electric potential for each of the pin 28 video output sync tip, pedestal, and white peak, and assign the measured values to l syn ,l ped , and l whi , respectively e pseudo v insertion level (pb) d v dp measure pin 28 dc voltage whe n5vis applied to pin 26, and assign the measured value to l vdp , and calculate the difference with l syn d v dp =l syn l vdp 80 0 +80 mv pseudo h insertion level (pb) d h dp measure pin 28 dc voltage when 2.5 v is applied to pin 26, and assign the measured value to l hdp , and calculate the difference with l ped d h dp =l ped l hdp 200 100 0 mv white insertion level (pb) d w hp measure pin 28 dc voltage when 1.3 v is applied to pin 26, and assign the measured value to l whp , and calculate the difference with l whi d w hp =l whi l whp 40 140 240 mv sync separation output level v syp v in = 0.5 vp-p video signal pin 26 output pulse peak value 4.0 4.2 4.4 vp-p continued on next page. LA7383 no.4032-5/13
continued from preceding page. parameter symbol conditions min typ max unit sync separation output pulse width pw syp v in = 0.5 vp-p video signal pin 26 output pulse width 4.0 4.3 4.6 s sync separation output leading edge delay time d t syp v in = 0.5 vp-p video signal, measure delay time of output sync versus input sync 1.4 1.6 1.8 s [rec mode chroma] rec chroma y/c separation output level v or-21 v in = standard color bar signal (1 vp-p) measure burst level at t21 170 220 270 mvp-p rec chroma low-band conversion output level v or-14 v in = standard color bar signal (1 vp-p) measure burst level at t14a 230 330 430 mvp-p burst emphasis amount g be v in = standard color bar signal (1 vp-p) ratio of burst level at t14a when s35a is off (sp/ep) and on (lp) 5.5 6.0 6.5 db vxo oscillation level v vxo-r v in = standard color bar signal (1 vp-p), measure t18 output amplitude (with an fet probe) 360 450 540 mvp-p rec acc characteristics 1 acc r1 v in = standard color bar signal (1 vp-p), input +6 db chroma signal level only, measure t14a burst level, and calculate ratio with v or-14 +0.2 +0.5 db rec acc characteristics 2 acc r2 v in = standard color bar signal (1 vp-p), input 6 db chroma signal level only, measure t14a burst level, and calculate ratio with v or-14 0.5 0.1 db rec acc killer input level v acck-on v in = standard color bar signal (1 vp-p), lower the chroma signal, and measure the input burst level at the point where output at t14a ceases, and calculate the ratio with the standard input level 30 27 24 db rec acc killer output level vo acck use a spectrum analyzer to measure the output level at t14a in the killer state described previously; ratio with v or-14 60 50 db input level for rec acc killer return v acckoff starting from the killer state described previously, gradually raise the input chroma level and measure the input burst level when output is generated at t14a and calculate the ratio with the standard input level 24 21 18 db vxo control sensitivity s vxo measure the pin 16 dc voltage when a standard color bar signal (1 vp-p) is input ... v o measure the frequency at t18a when v 0 is applied to pin 16 from the external power supply...f 1 measure the frequency at t18a when v o +10 mv is applied to pin 16 ...f 2 s vxo = f 2 f 1 10 hz/mv 3.3 4.9 7.5 hz/mv rec apc pull-in range 1 d f apc1 input a 50% white signal overlapping with a 3.5795 mhz, 300 mvp-p continuous wave. after confirming that there is output at t14a, increase the frequency of the cw until the output at t14a stops, and then gradually reduce the frequency until output appears again at t14a; that cw frequency is f 1 . d f apc1 =f 1 3579545 (hz) 350 440 hz rec apc pull-in range 2 d f apc2 in the same manner, reduce the frequency of the cw until the output at t14a stops, and then gradually increase the frequency until output appears again at t14a; that cw frequency is f 2 . d f apc2 = f2 3579545 (hz) 900 350 hz bgp delay time for apc acc t d (n) input a standard color bar signal overlapping with a 3.98 mhz, 300 mvp-p continuous wave, and measure waveforms at t26 and t16. 4.8 s continued on next page. LA7383 no.4032-6/13
continued from preceding page. parameter symbol conditions min typ max unit bgp pulse width for apc acc t w (n) 2.5 s rec afc pull-in range 1 d f afc1 input a string of pulses (negative polarity) at 286 mv, 15.7 khz with a width of 5 s. after increasing the frequency of the pulse string until the waveform at pin 20 is disrupted, then reduce the frequency until the waveform at pin 20 is normal again; that pulse string frequency is f 1 d f afc1 =f 1 15.734 (khz) +1.0 +7.0 khz rec afc pull-in range 2 d f afc2 in the same manner, after reducing the frequency of the pulse string until the waveform at pin 20 is disrupted, then increase the frequency until the waveform at pin 20 is normal again; that pulse string frequency is f 2 d f afc2 =f 2 15.734 (khz) 6.3 1.0 khz [pb mode chroma] pb chroma video output level vop-28 in pb, sp mode, input a continuous wave from t14a a chroma signal (sp mode, burst 50 mvp-p) that underwent low-band conversion from a chroma noise test signal. input a 50% white signal from t3a and measure the t28a burst level 210 260 310 mvp-p pb chroma pin 21 output level v op -21 measure the t21 burst level under the same conditions as for vop-28 170 200 230 mvp-p pb acc characteristics 1 acc p1 input the input chroma level at +6 db under the same conditions as for vop-28 and measure the t21 burst level, and calculate the ratio with vop-21 +0.5 +0.8 db pb acc characteristics 2 acc p2 input the input chroma level at 6 db under the same conditions as for vop-28 and measure the t21 burst level, and calculate the ratio with vop-21 0.5 0.2 db pb killer input level v ack-p lower the input chroma level under the same conditions as for vop-28 and measure the input burst level at the point where t21 chroma output ceases. (calculate ratio with standard input of 50 mvp-p) 55 40 db pb killer chroma output level v oack-p use a spectrum analyzer to measure the t28 chroma output level in the killer state described previously. calculate ratio with vop-28. 44 40 db pb main converter carrier leak c lp monitor t28a with a spectrum analyzer under the same conditions as for vop-28 and calculate the ratio between the 3.58 mhz component and the 4.21 mhz carrier leak component. 40 33 db burst de-emphasis amount g bd from t14a, input a 629 khz 50 mvp-p continuous wave; from t3a, input a 50% white signal, and calculate the ratio between the output level during the t21 burst interval and the output level during other intervals 4.35 4.6 4.85 db pb xo output level v xo-p in pb mode, measure the t18 output level with an fet probe 480 610 750 mvp-p continued on next page. LA7383 no.4032-7/13
continued from preceding page. parameter symbol conditions min typ max unit pb xo oscillation frequency variation d f xo in pb mode, measure the frequency at t18...f d f xo = f 3579545 (hz) 7 0 +7 hz sld detection current 1 i sld1 in pb mode, with s20: 3 and s19: off, input a 4 mhz 300 mvp-p continuous wave from t33a, input a 50% white signal from t3a, and measure the wave peak at t19a i sld1 = vos1/1 k w 110 160 210 a sld detection current 2 i sld2 in pb mode, with s20: 3 and s19: off, input a 4 mhz 300 mvp-p continuous wave from t33a, input a 50% white signal from t3a, and measure the wave peak at t19a i sld2 = vos2/1 k w 110 160 210 a cnr characteristics c nr sw21 ? 2: from t14a sw23 ? 3: input chroma signal that is a chroma noise test signal that underwent low-band conversion (sp mode, burst 50 mvp-p) pb mode: input a 50% white signal from t3a and measure the chroma level at t28 230 290 350 mv p-p us switch operation check us sw21 ? 2: from t14a sw23 ? 4: input chroma signal that is a chroma noise test signal that underwent low-band conversion (sp mode, burst 50 mvp-p) pb mode; input a 50% white signal from t3a and measure the chroma level at t28 450 560 670 mvp-p edit1 edit sw21 ? 2: from t14a sw23 ? 1: input chroma signal that is a chroma noise test signal that underwent low-band conversion (sp mode, burst 50 mvp-p) pb mode; input a 50% white signal from t3a and measure the chroma level at t28 450 560 670 mv p-p cnr-off cnr(off) sw21 ? 1: from t14a sw23 ? 3: input chroma signal that is a chroma noise test signal that underwent low-band conversion (sp mode, burst 50 mvp-p) pb mode; input a 50% white signal from t3a and measure the chroma level at t28 450 560 670 mv p-p cnr amp gain g cnr v in = 100 mvp-p 3.58 mhz cw 9.5 10.5 11.5 db 4.2 v regulator operation confirmation (1) v42(r) sw25 ? 1 measure t25 dc level rec mode 4.2 v dc 4.2 v regulator operation confirmation (2) v42(p1) sw25 ? 1 measure t25 dc level pb mode 4.2 v dc 4.2 v regulator operation confirmation (3) v42(p2) sw25 ? 2 measure t25 dc level pb mode 4.2 v dc LA7383 no.4032-8/13
test circuit diagram unit (resistance: w , capacitance: f) LA7383 no.4032-9/13
LA7383 mode table mode edit y/c separation by comb filter y (rec) y/c separation by comb filter c (rec) 1/2 f h shift (rec) burst emphasis (rec) nl emphasis (rec) ynr (rec) ynr (pb) high-pass, nc double type (pb) cnr (pb) pic.ctl (pb) detail enhancer (rec) apc. det. (pb) crosstalk correlation switching (pb) sp off (normal) c xx c x k0.5 lim 3ire k0.2 lim 5ire ccc (variable) strong (us) medium before comb c on (1) pin 23 h c xx c xx x c x(off) c medium weak before c on (2) pin 12 h c xx c xx x cc mid-point medium weak before c lp off (normal) ccc x c k0.65 lim 5ire k0.5 lim 11ire ccc strong medium after comb x on (1) pin 23 h c x c x c k0.25 lim 3 k0.2 lim 5 c x c medium weak after x on (2) pin 12 h c x c x c k0.25 lim 3 k0.2 lim 5 cc mid-point medium weak after x ep off (normal) ccccc k0.65 lim 5ire k0.5 lim 5 ccc strong medium after comb x on (1) pin 23 h c x cc c k0.25 lim 3 k0.2 lim 5 c x c medium weak after x on (2) pin 12 h c x cc c k0.25 lim 3 k0.2 lim 5 cc mid-point medium weak after x LA7383 no.4032-10/13
control pin function chart pin no. l m h pin 4 r/p switching open rec mode over 3.8 v pb mode pin 6 sp/ep switching open ep mode over 3.9 v sp mode pin 12 edit2 pic-ctl 2vto2.5v pic-ctl soft 2.5vto3v pic-ctl hard over 3.6 v edit2 on pin 16 special playback switching open before comb in sp over 3.5 v (over 200 a) after comb in sp pin 23 edit1 us under 1.5v us specifications open over 2.5 v edit1 on pin 27 qv, qh, char refer to pin 27, qv, qh, char, insertion diagram pin 34 doc stop control open normal mode over 3.9 v doc stop pin 35 rotary pulse lp switching sw30 tape speed sp or ep mode lp mode pin 21 cnr off over 3.0 v cnr off LA7383 pin 27 qv, qh, char, insertion pin 28 output pin 27 control voltage through (v) LA7383 no.4032-11/13
application circuit examples unit (resistance: w , capacitance: f) LA7383 no.4032-12/13
LA7383 ps no.4032-13/13 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer? products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer? products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the ?elivery specification for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of june, 1995. specifications and information herein are subject to change without notice.

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